ST STGB3NB60HD User Manual

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N-CHANNEL 3A - 600V TO-263
TYPE V
CES
ST G B3NB60HD 600 V < 2. 8 V 3 A
HIGHINPUT IMPEDANCE
(VOLTAGEDRIVEN)
LOW ON-VOLTAGEDROP (V
HIGHCURRENTCAPABILITY
VERYHIGH FREQUENCYOPERATION
OFFLOSSES INCLUDETAIL CURRENT
CO-PACKAGEDWITH TURBOSWITCH
ANTIPARALLELDIODE
SURFACE-MOUNTINGD
POWERPACKAGE IN TAPE & REEL (SUFFIX”T4”)
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequencyapplications(<120kHz).
V
CE(sat)
)
cesat
2
PAK(TO-263)
I
C
STGB3NB60HD
PowerMESHIGBT
3
1
D2PAK
TO-263
(Suffix”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGHFREQUENCY MOTOR CONTROLS
SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
I
CM
P
T
() Pulse width limited by max. junction temperature
June 1999
Collect o r -Em i t t er Volt age (VGS= 0) 600 V
CES
Gate-Emitter V oltage ± 20 V
GE
I
Collect o r Current (continuous ) at Tc=25oC6A
C
I
Collect o r Current (continuous ) at Tc= 100oC3A
C
() Collect or Current (pulsed) 24 A
Tot al Dissipation at Tc=25oC70W
tot
Derat ing Fact or 0.56 W/ Sto rage Temperature -65 to 150
stg
T
Max. Oper a t ing Junction Tem perature 150
j
o
C
o
C
o
C
1/8
STGB3NB60HD
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max Ther mal Resistanc e Junct ion-ambient Max Ther mal Resistanc e Case-sink Ty p
1.78
62.5
0.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwise specified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
BR(CES)
Collector-Emitter
IC=250µAVGE= 0 600 V
Break dow n Voltage
I
I
CES
GES
Collect o r cut-of f
=0)
(V
GE
Gat e- Em i t t er Leakage Current (V
CE
=0)
V
=MaxRating Tj=25oC
CE
=MaxRating Tj=125oC
V
CE
V
= ± 20 V VCE=0 ±100 nA
GE
100
1000
ON(∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GE(th)
Gate Th reshold
VCE=VGEIC= 250 µ A35V
Voltage
V
CE(SAT)
Collector-Emitter Sat urat ion V olt age
VGE=15V IC=3A V
=15V IC=3A Tj=125oC
GE
2.4
1.9
2.8 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
C
C
C
Q Q
g
Q
I
CL
Forward
fs
Tr ansc on duc tance Input Capaci t ance
ies
Out put Capac it ance
oes
Reverse Transfer
res
Capacit a nc e Tot al Gate Charge
G
Gate-Emitt er C harge
GE
Gat e- Col lect or C har ge
GC
Latc hing C urrent V
VCE=25 V IC=3A 1.3 2.4 S
VCE=25V f=1MHz VGE= 0 160
23
4.5
VCE= 480 V IC=3A VGE=15V 21
235
33
6.6
300
43
8.6
27 nC
6
7.6
=480V RG=10
clamp
T
= 150oC
j
12 A
µA µ
V
pF pF pF
nC nC
A
SWITCHINGON
Symbol Param et er Test Co n d i t ions Min. Typ. Max. Uni t
(di/dt)
2/8
t
d(on)
t
r
Eon(❍)
Delay Time Rise Tim e
Tur n-on Current Slope
on
Tur n-on Switc hing Losses
VCC= 480 V IC=3A
=15V RG=10
V
GE
V
= 480 V IC=3A
CC
=10 VGE=15V
R
G
T
= 125oC
j
16 30
400
77
ns ns
A/µs
J
µ
STGB3NB60HD
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
tr(v t
E
E
tr(v t
E
E
(off)
d
off
ts
(off)
d
off
ts
t
t
Cross-Over Tim e
c
Off Voltage Rise Time
)
off
Delay Time
t
Fall T ime
f
(**)
Turn-off Switching Loss
(❍)
Tot al Switching Lo ss Cross-Over Tim e
c
Off Voltage Rise Time
)
off
Delay Time Fall T ime
t
f
Turn-off Switching Loss
(**) (❍)
Tot al Switching Lo ss
VCC = 480 V I R
GE
=10
VGE=15V
VCC = 480 V I R
GE
= 125oC
T
j
=10
VGE=15V
=3A
C
=3A
C
90 36 53 70 33
100 180
82 58
110
88
165
COLLECTOR-EMITTERDIODE
Symbol Param et er Test Co n d itions M i n . Typ. Max. Unit
I
For ward Curre nt
f
I
V
t
Q
I
rrm
() Pulse width limited by max. junction temperature (
) Include recovery losses on the STTA306 freewheeling diode
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5% (**)Losses Include Also The Tail (Jedec Standardization)
For ward Curre nt puls e d
fm
For ward On-Voltage If=3A
f
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
Reverse Recovery Current
=3A Tj= 125oC
I
f
If=3A VR=200 V dI/dt = 100 A/µST
= 125oC
j
1.6
1.4 87
160
3.7
3
24
2.0 V
ns ns ns ns
µJ µ
ns ns ns ns
µ µ
J
J J
A A
V
ns
nC
A
ThermalImpedance
3/8
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