The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16)
non-volatile memory that can be read, erased and
reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V)
supply. On power-up the memory defaults to its
Read mode.
The device features an asymme trical block ar chitecture. The M29W320E has an array of 8 parameter and 63 main blocks. M29W320ET locates the
Parameter Blocks at the top of the memory address space while the M29W320EB locates the
Parameter Blocks starting from the bottom.
M29W320E has an extra 32 KWord (x16 mode) or
64 KByte (x8 mode) block, the Extended Block,
that can be accessed using a dedicated command. The Extended Block c an be protected and
so is useful fo r storing security in formation . However the protection is irreversible, o nce protected
the protection cannot be undone.
Each block can be eras ed independently so it is
possible to prese rve valid data while old data i s
M29W320ET, M29W320EB
erased. The blocks can be protected to prevent
accidental Program or Erase commands from
modifying the memory. Program and Erase com mands are written to the Command Interface of
the memory. An on-chip Program/Erase Controller
simplifies the proces s of programming or e rasing
the memory by taking care of all of the special operations that are required to upd ate the memory
contents. The end of a program or erase operation
can be detected an d any error conditions identified. The command set required to control the
memory is consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.
They allow simple connection to most microprocessors, often without additional logic.
The memory is offered i n TSOP48 (12x20mm), and
TFBGA48 (6x8mm, 0.8mm pitch) packages. The
memory is supplied with all the bits erased (set to
’1’).
Figure 2. Logic DiagramTable 1. Signal Names
A0-A20Address Inputs
DQ0-DQ7Data Inputs/Outputs
VPP/WP
V
A0-A20
W
RP
CC
21
E
G
M29W320ET
M29W320EB
V
SS
15
DQ0-DQ14
DQ15A–1
BYTE
RB
AI09346
DQ8-DQ14Data Inputs/Outputs
DQ15A–1Data Input/Output or Address Input
E
G
W
RP
RB
BYTE
V
Figure 4. TFBGA48 Connections (Top view through package)
M29W320ET, M29W320EB
654321
A
B
C
D
E
F
G
H
A3
A4
A2
A1
A0
E
G
V
SS
A7
A17
A6
A5A20
DQ0
DQ8
DQ9
DQ1
RB
V
PP
A18
DQ2
DQ10
DQ11
DQ3
/
WP
W
RP
NC
A19
DQ5
DQ12
V
CC
DQ4
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A13
A12
A14
A15
A16
BYTE
DQ15
A–1
V
SS
AI08084
7/46
M29W320ET, M29W320EB
Figure 5. Block Addresses (x8)
Top Boot Block (x8)
Address lines A20-A0, DQ15A-1
000000h
00FFFFh
2F0000h
2FFFFFh
300000h
30FFFFh
3E0000h
3EFFFFh
3F0000h
3F1FFFh
64 KByte or
32 KWord
64 KByte or
32 KWord
64 KByte or
32 KWord
64 KByte or
32 KWord
8 KByte or
4 KWord
Total of 63
Main Blocks
Total of 8
Parameter
(1)
Blocks
Bottom Boot Block (x8)
Address lines A20-A0, DQ15A-1
000000h
001FFFh
00E000h
00FFFFh
010000h
01FFFFh
0F0000h
0FFFFFh
100000h
10FFFFh
8 KByte or
4 KWord
8 KByte or
4 KWord
64 KByte or
32 KWord
64 KByte or
32 KWord
64 KByte or
32 KWord
Total of 8
Parameter
(1)
Blocks
Total of 63
Main Blocks
3FE000h
3FFFFFh
Note 1. Used as Extended Block Addresses in Extended Block mode.
Note: Also see APPENDIX A., Table 20. and Table 21. for a full listing of the Block Addresses.
8 KByte or
4 KWord
3F0000h
3FFFFFh
64 KByte or
32 KWord
AI09348
8/46
Figure 6. Block Addresses (x16)
M29W320ET, M29W320EB
000000h
007FFFh
178000h
17FFFFh
180000h
187FFFh
1F0000h
1F7FFFh
1F8000h
1F8FFFh
Top Boot Block (x16)
Address lines A20-A0
64 KByte or
32 KWord
64 KByte or
32 KWord
64 KByte or
32 KWord
64 KByte or
32 KWord
8 KByte or
4 KWord
Total of 63
Main Blocks
Total of 8
Parameter
(1)
Blocks
000000h
000FFFh
007000h
007FFFh
008000h
00FFFFh
078000h
07FFFFh
080000h
087FFFh
Bottom Boot Block (x16)
Address lines A20-A0
8 KByte or
4 KWord
8 KByte or
4 KWord
64 KByte or
32 KWord
64 KByte or
32 KWord
64 KByte or
32 KWord
Total of 8
Parameter
(1)
Blocks
Total of 63
Main Blocks
1FF000h
1FFFFFh
Note 1. Used as Extended Block Addresses in Extended Block mode.
Note: Also see APPENDIX A., Table 20. and Table 21. for a full listing of the Block Addresses.
8 KByte or
4 KWord
1F8000h
1FFFFFh
64 KByte or
32 KWord
AI09349
9/46
M29W320ET, M29W320EB
SIGNAL DESCRIPTIONS
See Figure 2., Logic Diagram, and Table
1., Signal Names, for a brief overview of the sig-
nals connected to this device.
Address Inputs (A0-A20). The Address Inputs
select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the
Command Interface of the Program/Erase Controller.
Data Inputs/Outputs (DQ0-DQ7). The Data I/O
outputs the data stored at the selected address
during a Bus Read operation. During Bus Write
operations they repr esent the commands s ent to
the Command Interface of the Program/Erase
Controller.
Data Inputs/Outputs (DQ8-DQ14). The Data I/O
outputs the data stored at the selected address
during a Bus Read operati on wh en B YTE
V
. When BYTE is Low, VIL, these pins are not
IH
used and are hig h impedance. During Bus W rite
operations the Command Regis ter does not use
these bits. When reading the Status Register
these bits should be ignored.
Data Input/Output or Address Input (DQ15A –1).
When BYTE
is High, VIH, this pin behaves as a
Data Input/Output pin (as DQ8-DQ14). When
BYTE
is Low, VIL, this pin behaves as an address
pin; DQ15A–1 Low will select the LSB of the addressed Word, DQ15A–1 High will select the MSB.
Throughout the text consider references to the
Data Input/Output to include this pin when BYTE
High and references to t he Address Inputs to include this pin when BYTE
is Low except when
stated explicitly otherwise.
Chip Enable (E
). The Chip Enable, E, activates
the memory, allowing Bus Read and Bus Write operations to be performed. When Chip Enable is
High, V
Output Enable (G
, all other pins are ignored.
IH
). The Output Enable, G, con-
trols the Bus Read operation of the memory.
Write Enable (W
). The Write Enabl e, W, controls
the Bus Write operation of the memory’s Command Interface.
V
Write Protect (VPP/WP). The VPP/Write
PP/
Protect
pin provides two functions. T he VPP function allows the memory to use an external high
voltage power supply to reduc e the time required
for Program operations. This is achieved by bypassing the unlock cycles and/or using the Double
Word or Quadruple Byte Program commands.
The Write Protect function provides a hardware
method of protecting the two outermost boot
blocks. When V
/Write Protect is L ow, VIL, the
PP
memory protects the two outer most boot blocks;
Program and Erase operations in these blocks are
is High,
is
ignored while V
RP
is at VID.
When V
/Write Protect is High, VIH, the memory
PP
/Write Protect is Low, even when
PP
reverts to the previous protection status of the two
outermost boot blocks. Program and Erase operations ca n now mod ify th e data in these blocks unless the blocks are protected using Block
Protection.
When V
/Write Protect is raised to V
PP
the mem-
PP
ory automatically enters the Unlock Bypass mode.
When V
/Write Protect returns to VIH or VIL nor-
PP
mal operation resumes. During Unlock Bypass
Program operations th e memory draws I
PP
from
the pin to supply the programming circuits. See the
description of the Unl ock By pas s c omm and in the
Command Interface sec tion. The transitio ns from
V
to VPP and from VPP to VIH must be slower
IH
than t
Never raise V
, see Figure 17.
VHVPP
/Write Protect to VPP from any
PP
mode except Read mode, otherwise the memory
may be left in an indeterminate state.
The V
/Write Protect pin must not be left floating
PP
or unconnected or the device may become unreliable. A 0.1µF capacitor should be connected between the V
/Write Protect pin and the V
PP
SS
Ground pin to decouple the current surges from
the power supply. The PCB track widths must be
sufficient to carry the currents required during
Unlock Bypass Program, I
Reset/Block Temporary Unprotect (RP
PP
.
). The
Reset/Block Temporary Unprotect pin can be
used to apply a Hardware Reset to the memory or
to temporarily unprote ct all Bl oc ks t hat h av e be en
protected.
Note that if V
/WP is at VIL, then the two outer-
PP
most boot blocks will remain protected even if RP
is at V
ID
.
A Hardware Reset is achieved by holdi ng Reset/
Block Temporary Unp rotect Low, V
t
. After Reset/Block Temporary Unprotect
PLPX
goes High, V
, the memory will be ready f or Bus
IH
Read and Bus Write operations after t
, whichever occurs last. See the Ready/Busy
t
RHEL
, for at least
IL
PHEL
or
Output section, Tabl e 16. and Figure 16., Reset/
Block Temporary Unprotect AC Waveforms, for
more details.
Holding RP
at VID will temporarily unprotect the
protected Blocks in the memory. Program and
Erase operations on all blocks will be possible.
The transition from V
PHPHH
.
t
Ready/Busy Output (RB
to VID must be slower than
IH
). The Ready/Busy pin
is an open-drain output that can be used to identify
when the device is performing a Program or Erase
operation. During Program or Erase operations
10/46
M29W320ET, M29W320EB
Ready/Busy is Low, VOL. Ready/Busy is hig h-impedance during Read mode, Auto Select mode
and Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write
operations cannot begin until Ready/Busy becomes high-impedance. See Table 16. and Figure
16., Reset/Block Tem porary Unp rotect AC Waveforms.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor. A Low will then indicate
that one, or more, of the memories is busy.
Byte/Word Organizatio n Select (BYTE
). The
Byte/Word Organization Select pin is used to
switch between the x8 and x16 Bus modes of the
memory. When Byte/ Word Organi zation Sel ect is
Low, V
High, V
, the memory is in x8 mode, when it is
IL
, the memory is in x16 mode.
IH
Supply Voltage (2.7V to 3.6V). VCC pro-
V
CC
vides the power su pply for all operations (Read,
Program and Erase).
The Command Interface is disabled when the V
CC
Supply Voltage is le ss than the Lockout Vo ltage,
V
. This prevents Bus Write operations from ac-
LKO
cidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operation aborts and the memory contents being altered will be invalid.
A 0.1µF capacito r should be connected between
the V
Supply Voltage pin and the VSS Ground
CC
pin to decouple the current surges from the power
supply. The PCB track widths must be sufficient to
carry the currents required during Program and
Erase operations, I
Ground. VSS is the referenc e for all voltage
V
SS
measurements. The d evic e fe atures tw o V
CC3
.
pins
SS
which must be both connected to the system
ground.
11/46
M29W320ET, M29W320EB
BUS OPERATIONS
There are five standard bus operations that control
the device. These are Bus Read, Bus Writ e, Output Disable, Standby and Automatic Standby.
See Table 2. and Table 3., Bus Operations, for a
summary. Typically glitches of less than 5ns on
Chip Enable or Write En able are ignored by the
memory and do not affect bus operations.
Bus Read. Bus Read operations read from the
memory cells, or specific registers in the Command Interface. A valid Bus Read operation involves setting the desired address on the Address
Inputs, applying a Low s ig nal, V
and Output Enable and keeping Write Enable
High, V
. The Data Inputs/Outputs will ou tpu t the
IH
value, see Figure 11., Read Mode AC Waveforms,
and Table 12., Read AC Characteristics, for details of when the output becomes valid.
Bus Write. Bus Write operations write to the
Command Interface. A v alid Bus Write operati on
begins by setting the desired address on the Address Inputs. The Ad dress Inputs are latched b y
the Command Interface on the falling edge of Chip
Enable or Write Enable, whichever occurs last.
The Data Inputs/Outputs ar e latched by the Com mand Interface on the rising ed ge of Chip Enab le
or Write Enable, whichever occurs first. Output Enable must remain High, V
IH
Write operation. See Figure 12. and Figure 13.,
Write AC Waveforms, and Table 13. and Table
14., Write AC Characteristics, for details of the tim-
ing requirements.
Output Disable. The Data Inputs/Outpu ts are in
the high impedance state when Output Enable is
High, V
.
IH
Standby. When Chip Enable is High, V
memory enters Standby mode and the Data Inputs/Outputs pins are placed in the high-impedance state. To reduce the Su pply Current to the
Standby Supply Current, I
CC2
, to Chip Enable
IL
, during the whole Bus
, the
IH
, Chip Enable should
be held within V
± 0.2V. For the Standby current
CC
level see Table 11., DC Characteristics.
During program or eras e operations the memory
will continue to use the Program/Erase Supply
Current, I
, for Program or Erase operations un-
CC3
til the operation completes.
Automatic Standby. If CMOS levels (V
± 0.2V)
CC
are used to drive the bus and the bus is inactive for
300ns or more the memory enters Automatic
Standby where the interna l Supply Current is reduced to the Standby Supply Current, I
CC2
. The
Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to
read the Electronic Signature and also to apply
and remove Block Protection. These bus operations are intended for us e by progr ammin g equip ment and are not usually used in applications.
They require V
to be applied to some pins.
ID
Electronic Signature. The memory has two
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can b e read b y apply ing the sig nals
listed in Table 2. and Table 3., Bus Operati ons.
Block Protect and Chip Unprotect.
Groups of
blocks can be protected against accidental Program or Erase. The Prot ection Groups are sh own
in APPENDIX A., Table 20. and Table 21., Block
Addresses. The whole chip ca n be unp ro tec ted to
allow the data inside the blocks to be changed.
The V
the two outermost boot blocks. When V
Protect
/Write Protect pin can be used to protect
PP
is at V
the two outermost boot blocks are
IL
PP
/Write
protected and remain protected regardless of the
Block Protection Status or the Reset/Block Temporary Unprotect pin status.
Block Protect an d Chip Unprotect ope rations are
described in APPENDIX D.
12/46
M29W320ET, M29W320EB
Table 2. Bus Operations, BYTE = V
OperationEGW
Bus Read
Bus Write
Output DisableX
Standby
Read Manufacturer
Code
Read Device Code
Extended Memory
Block Verify Code
Note: X = VIL or VIH.
V
V
V
V
V
V
V
IL
IL
IH
IL
IL
IL
IL
V
IH
V
IH
XXXHi-ZHi-Z
V
IL
V
IL
V
IL
Table 3. Bus Operations, BYTE = V
OperationE
Bus Read
Bus Write
Output DisableX
Standby
Read Manufacturer
Code
Read Device Code
Extended Memory
Block Verify Code
Note: X = VIL or VIH.
V
V
V
V
V
V
GW
V
IL
IL
IH
IL
IL
IL
IL
V
IH
V
IH
XXXHi-Z
V
IL
V
IL
V
IL
IL
Address Inputs
DQ15A–1, A0-A2 0
V
Cell AddressHi-ZData Output
IH
V
Command AddressHi-ZData Input
IL
V
XHi-ZHi-Z
IH
A0 = VIL, A1 = VIL, A9 = VID,
V
IH
Others V
A0 = VIH, A1 = VIL,
V
IH
A9 = V
A0 = VIH, A1 = VIH, A6 = VIL,
V
IH
A9 = V
IH
or V
IL
IH
, Others VIL or V
ID
, Others VIL or V
ID
DQ14-DQ8DQ7-DQ0
IH
IH
Address Inputs
A0-A20
V
Cell AddressData Output
IH
V
Command AddressData Input
IL
V
XHi-Z
IH
A0 = VIL, A1 = VIL, A9 = VID,
V
IH
Others VIL or V
A0 = VIH, A1 = VIL, A9 = VID,
V
IH
Others VIL or V
A0 = VIH, A1 = VIH, A6 = VIL,
V
IH
A9 = V
ID
IH
IH
, Others VIL or V
IH
Data Inputs /Ou tpu t s
Hi-Z20h
Hi-Z
Hi-Z
56h (M29W320ET)
57h (M29W320EB)
81h (factory locked)
01h (not factory locked)
Data Inputs/Outputs
DQ15A–1, DQ14-DQ0
0020h
2256h (M29W320ET)
2257h (M29W320EB)
81h (factory locked)
01h (not factory locked)
13/46
M29W320ET, M29W320EB
COMMAND INTERFACE
All Bus Write operations to the memory are interpreted by the Command Interface. Commands
consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus
Write operation s will result in the memory return ing to Read mode. The long command sequences
are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16-bit or 8bit mode. See either Table 4., or Table 5., depending on the configuration that is being used, for a
summary of the commands.
Read/Reset Command
The Read/Reset command returns the memory to
its Read mode. It also resets the errors in the Status Register. Either one or three Bus Wr i te ope ra tions can be used to issue the Read/Reset
command.
The Read/Reset command can be issued, between Bus Write cycles before the start of a program or erase operation, to return the device to
read mode. If the Read/Reset command is issu ed
during the time-out of a Block erase operation then
the memory will take up to 10µ s to abort. During
the abort period no valid data can be read from the
memory. The Read/Reset command will not abort
an Erase operation when issued while in Erase
Suspend.
Auto Select Command
The Auto Select command is used to read the
Manufacturer Code, th e Device Code, the Block
Protection Status and the Extended Memory Block
Verify Code. Three consecuti ve Bus Write ope rations are required t o issue the Auto Select command. The memory remai ns in Auto Sel ect mode
until a Read/Reset or CFI Query command is issued.
In Auto Select mode the M anufacturer Code can
be read using a Bus Read operation with A0 = V
and A1 = VIL. The other address bits may be set to
either V
The Device Code ca n be read using a Bu s Read
operation with A0 = V
address bits may be set to either V
The Block Protectio n Statu s of ea ch block c an be
read using a Bus Read ope ration with A0 = V
A1 = V
dress. The other address bits may be set to either
V
IL
or VIH.
IL
and A1 = VIL. The other
IH
and A12-A20 specifying the block ad-
IH
or VIH.
IL
IL
or VIH. If the addressed block is protected then
01h is output on Data Inputs/Ou tputs DQ0-DQ7,
otherwise 00h is output.
Read CFI Query Command
The Read CFI Query Comma nd is used to read
data from the Common Flash Interface (CFI)
Memory Area. This command is valid when the device is in the Read Array mode, or when the device
is in Auto Select mode.
One Bus Write cycle is required to issue the Read
CFI Query Command . Once the command is issued subsequent Bus Read operatio ns read from
the Common Flash Interface Memory Area.
The Read/Reset command must be issue d to return the device to the previous mode (the Read Array mode or Aut o Select mode ). A second R ead/
Reset command would be needed if the d evice i s
to be put in the Read Array mode from Auto Select
mode.
See APPENDIX B. , Tables 22, 23, 24, 25, 26 and
27 for details on the informati on contained in the
Common Flash Interface (CFI) memory area.
Program Command
The Program command can be used to program a
value to one address in the memory array at a
time. The command requires four Bus Write op er ations, the final write operation latches the address and data, and starts the Program/Erase
Controller.
If the address falls in a protect ed block then the
Program command is ignored, the data remain s
unchanged. The Status Register is never read and
no error condition is given.
During the program operation th e memory will ig nore all commands. It is no t possib le to is sue any
command to abort or pause the operation. After
programming has started, Bus Read operations
output the Status Re gister content. See the s ection on the STATUS REGISTER for more details.
IL
Typical program times are given in Table 6.
After the program operation has completed the
memory will return to the Read mode, unless an
error has occurred. When an error occurs Bus
Read operations will continue to output the Status
Register. A Read/Reset command must be issued
to reset the error condition and return to Read
,
mode.
Note that the Program command cannot change a
bit set at ’0’ back t o ’1’. One of the Erase Commands must be used to set all the bits in a block or
in the whole memory from ’0’ to ’1’.
14/46
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