easySPIN – fully integrated microstepping motor driver
Features
■ Operating voltage: 8 - 45 V
■ 7.0 A output peak current (3.0 A r.m.s.)
■ Low R
■ Programmable power MOS slew-rate
■ Up to 1/16 microstepping
■ Current control with adaptive decay
■ Non dissipative current sensing
■ SPI interface
■ Low quiescent and standby currents
■ Programmable non dissipative overcurrent
protection on all power MOS
■ Two-level overtemperature protection
Application
■ Bipolar stepper motor
power MOSFETS
DSon
L6474
POWERSO36
an adaptive decay mode which outperforms
traditional implementations.
All data registers, including those used to set
analogue values (i.e. current control value,
current protection trip point, dead time, etc.) are
sent through a standard 5 Mbit/s SPI.
A very rich set of protections (thermal, low bus
voltage, overcurrent) makes the L6474 “bullet
proof” as required by the most demanding motor
control applications.
HTSSOP28
Description
The L6474, realized in analog mixed signal
technology, integrates a dual low R
full bridge with all power switches equipped with
an accurate on-chip current sensing circuitry
suitable for non dissipative current control and
overcurrent protections. Thanks to a new current
control, a 1/16 microstepping is achieved through
1. Maximum output current limit is related to metal connection and bonding characteristics. Actual limit must satisfy maximum
thermal dissipation constraints.
2. TBD.
GND, diff
V
boot
V
REG
ADCIN
V
OSC
out_diff
LOGIC
I
out
T
OP
T
P
tot
PGND and DGND
Bootstrap peak voltage 55 V
Internal voltage regulator output pin
and logic supply voltage
Integrated ADC input voltage range
(ADCIN pin)
OSCIN and OSCOUT pin voltage
range
Differential voltage between V
, OUT2A, PGND and VSB,
OUT1
A
OUT1
, OUT2B, PGND pins
B
SA
,
= VSB = VS 48 V
V
SA
Logic inputs voltage range -0.3 to +5.5 V
(1)
R.m.s. output current 3 A
(1)
Pulsed output current T
< 1 ms 7 A
PULSE
Operating junction temperature 150 °C
Storage temperature range -55 to 150 °C
s
Total power dissipation (TA = 25 ºC)
(2)
±0.3 V
3.6 V
-0.3 to +3.6 V
-0.3 to +3.6 V
TBDW
Doc ID 022529 Rev 27/51
Electrical dataL6474
2.2 Recommended operating conditions
Table 3.Recommended operating conditions
Symbol Parameter Test condition Value Unit
V
Logic interface supply voltage
DD
V
Motor supply voltage VSA = VSB = VS 8 45 V
S
Differential voltage between
, OUT1A, OUT2A, PGND
V
V
out_diff
SA
and V
, OUT1B, OUT2B,
SB
PGND pins
V
Logic supply voltage
REG,in
Integrated ADC input voltage
V
ADC
(ADCIN pin)
Operating junction temperature -25 125 °C
T
j
2.3 Thermal data
Table 4.Thermal data
SymbolParameterPackageTypUnit
R
thJA
1. TBD.
2. TBD.
Thermal resistance junction-ambient
3.3 V logic outputs 3.3 V
5 V logic outputs 5
V
= V
SA
V
REG
external source
= VS 45 V
SB
voltage imposed by
HTSSOP28
POWERSO36
3.2 3.3 V
TBD
TBD
REG
V
°C/W
0 V
(1)
(2)
8/51Doc ID 022529 Rev 2
L6474Electrical characteristics
3 Electrical characteristics
VSA = VSB = 36 V; VDD = 3.3 V; internal 3 V regulator; TJ = 25 °C, unless otherwise
specified.
Table 5.Electrical characteristics
Symbol Parameter Test condition Min. Typ. Max. Unit
General
V
SthOn
V
SthOff
V
SthHyst VS
I
q
T
j(WRN)
T
j(SD)
VS UVLO turn-on threshold 7.5 8.2 8.9 V
VS UVLO turn-off threshold 6.6 7.2 7.8 V
UVLO threshold hysteresis 0.7 1 1.3 V
Quiescent motor supply current
Thermal warning temperature 130 °C
Thermal shutdown temperature 160 °C
Charge pump
Voltage swing for charge pump oscillator 10 V
V
pump
f
pump,min
f
pump,max
I
boot
Minimum charge pump oscillator frequency
(1)
Maximum charge pump oscillator frequency
(1)
Average boot current
Output DMOS transistor
High side switch ON resistance
R
DS(on)
Low side switch ON resistance
I
DSS
t
Leakage current
Rise time
r
(3)
Internal oscillator selected;
V
= 3.3 V ext; CP
REG
floating
= f
f
sw,A
= 15.6 kHz
sw,B
POW_SR = ‘10’
= 25 °C, I
T
j
T
= 125 °C,
j
T
= 25 °C, I
j
= 125 °C,
T
j
OUT = V
= 3A 0.37
out
(2)
I
= 3A 0.51
out
= 3A 0.18
out
(2)
I
= 3A 0.23
out
S
OUT = GND -0.3
POW_SR = '00', I
POW_SR = '00', I
POW_SR = ‘11’, I
POW_SR = ‘10’, I
POW_SR = ‘01’, I
= +1A 100
out
= -1A 80
out
= ±1A 100
out
= ±1A 200
out
= ±1A 300
out
0.5 0.65 mA
660 kHz
800 kHz
1.1 1.4 mA
Ω
3.1
mA
ns
Doc ID 022529 Rev 29/51
Electrical characteristicsL6474
Table 5.Electrical characteristics (continued)
Symbol Parameter Test condition Min. Typ. Max. Unit
(3)
SR
SR
t
f
out_r
out_f
Fall time
Output rising slew-rate
Output falling slew-rate
Dead time and blanking
POW_SR = '00'; I
POW_SR = '00'; I
POW_SR = ‘11’, I
POW_SR = ‘10’, I
POW_SR = ‘01’, I
POW_SR = '00', I
POW_SR = '00', I
POW_SR = ‘11’, I
POW_SR = ‘10’, I
POW_SR = ‘01’, I
POW_SR = '00', I
POW_SR = '00', I
POW_SR = ‘11’, I
POW_SR = ‘10’, I
POW_SR = ‘01’, I
= +1A 90
out
= -1A 110
out
= ±1A 110
out
= ±1A 260
out
= ±1A 375
load
= +1A 285
out
= -1A 360
out
= ±1A 285
out
= ±1A 150
out
= ±1A 95
out
= +1A 320
out
= -1A 260
out
= ±1A 260
out
= ±1A 110
out
= ±1A 75
out
POW_SR = '00' 250
ns
V/µs
V/µs
t
DT
t
blank Blanking time
Dead time
Source-drain diodes
High side diode forward ON voltage I
V
SD,HS
V
Low side diode forward ON voltage I
SD,LS
t
rrHS
t
rrLS
High side diode reverse recovery time I
Low side diode reverse recovery time I
(1)
(1)
POW_SR = ‘11’,
= 16 MHz
f
OSC
POW_SR = ‘10’,
f
= 16 MHz
OSC
POW_SR = ‘01’,
= 16 MHz
f
OSC
375
625
875
POW_SR = '00' 250
POW_SR = ‘11’,
= 16 MHz
f
OSC
POW_SR = ‘10’,
= 16 MHz
f
OSC
POW_SR = ‘01’,
f
= 16 MHz
OSC
= 1 A 1 1.1 V
out
= 1 A 1 1.1 V
out
= 1 A 30 ns
out
= 1 A 100 ns
out
375
625
875
ns
ns
10/51Doc ID 022529 Rev 2
L6474Electrical characteristics
Table 5.Electrical characteristics (continued)
Symbol Parameter Test condition Min. Typ. Max. Unit
Logic inputs and outputs
V
Low logic level input voltage 0.8 V
IL
V
High logic level input voltage 2 V
IH
I
IH
I
IL
V
OL
High logic level input current
Low logic level input current
Low logic level output voltage
VOH High logic level output voltage
RPU
R
R
PUDIR
I
logic
PD
CS pull-up and STBY pull-down resistors
DIR input pull-up resistance DIR = GND 60 85 110 kΩ
Internal logic supply current
(4)
V
(5)
(6)
= 5 V 1 µA
IN
V
= 0 V -1 µA
IN
VDD = 3.3 V, IOL = 4 mA 0.3
VDD = 5 V, IOL = 4 mA 0.3
V
= 3.3 V, IOH = 4 mA 2.4
DD
= 5 V, IOH = 4 mA 4.7
V
DD
= GND;
CS
STBY/RST
3.3 V V
= 5 V
externally
REG
supplied, internal oscillator
335 430 565 kΩ
3.7 4.3 mA
V
V
I
logic,STBY
f
Standby mode internal logic supply current
Step clock input frequency 2 MHz
STCK
Internal oscillator and external oscillator driver
Internal oscillator frequency T
f
osc,i
f
Programmable external oscillator frequency 8 32 MHz
osc,e
V
OSCOUTH
V
OSCOUTL
t
rOSCOUT
t
fOSCOUT
t
t
OSCOUT clock source high level voltage
OSCOUT clock source low level voltage
OSCOUT clock source rise and fall time Internal oscillator 20 ns
Internal to external oscillator switching delay 3 ms
extosc
intosc
External to internal oscillator switching delay 1.5 µs
SPI
f
Maximum SPI clock frequency
CK,MAX
t
rCK
t
fCK
t
hCK
t
lCK
t
setCS
SPI clock rise and fall time
SPI clock high and low time
Chip select set-up time
(7)
(7)
(7)
(7)
3.3 V V
supplied
= 25 °C, V
j
externally
REG
REG
2 2.5 µA
= 3.3 V -3% 16 +3% MHz
Internal oscillator 3.3 V
V
externally supplied;
REG
I
OSCOUT
= 4 mA
2.4 V
Internal oscillator 3.3 V
V
externally supplied;
REG
I
OSCOUT
= 4 mA
0.3 V
5 MHz
CL = 30 pF 25 ns
75 ns
350 ns
Doc ID 022529 Rev 211/51
Electrical characteristicsL6474
Table 5.Electrical characteristics (continued)
Symbol Parameter Test condition Min. Typ. Max. Unit
(7)
(7)
10 ns
800 ns
(7)
(7)
(7)
(7)
(7)
(7)
37 ns
25 ns
20 ns
38 ns
47 ns
57 ns
t
Chip select hold time
holCS
t
Deselect time
disCS
t
setSDI
t
holSDI
t
enSDO
t
disSDO
t
vSDO
t
holSDO
Data input set-up time
Data input hold time
Data output enable time
Data output disable time
Data output valid time
Data output hold time
Current control
I
STEP,max
I
STEP,m in
Max. programmable reference current 4 A
Min. programmable reference current 31 mA
Overcurrent protection
I
OCD,MAX
I
OCD,MIN
I
OCD,RES
t
OCD,Flag
t
OCD,SD
Maximum programmable overcurrent
detection threshold