The L6392 is a high-voltage device manufactured
with the BCD “OFF-LINE” technology. It is a single
chip half-bridge gate driver for N-channel Power
MOSFET or IGBT.
The high side (floating) section is designed to
stand a voltage rail up to 600 V. The logic inputs
are CMOS/TTL compatible down to 3.3 V for easy
interfacing microcontroller/DSP
The IC embeds an operational amplifier suitable
for advanced current sensing in applications such
as field oriented motor control.
1. The circuit provides less than 1 V on the LVG and HVG pins (@ Isink = 10 mA), with VCC > 3 V. This allows
to omitting the “bleeder” resistor connected between the gate and the source of the external MOSFET
normally used to hold the pin low; the gate driver assures low impedance also in SD condition.
4/20Doc ID 14494 Rev 5
L6392Truth table
3 Truth table
Table 3.Truth table
InputsOutputs
SD
LXXLL
HLLHL
HLHL L
HHL L L
HHHLH
Note:X: don’t care
LINHINLVGHVG
Doc ID 14494 Rev 55/20
Electrical dataL6392
4 Electrical data
4.1 Absolute maximum ratings
Table 4.Absolute maximum rating
Value
SymbolParameter
MinMax
Unit
V
V
V
V
V
V
V
dV
P
T
Supply voltage - 0.3 + 21 V
CC
Output voltageV
out
Bootstrap voltage - 0.3 620V
boot
High side gate output voltage V
hvg
Low side gate output voltage -0.3 VCC + 0.3V
Ivg
Opamp non-inverting input -0.3 VCC + 0.3V
op+
Opamp inverting input-0.3 VCC + 0.3V
op-
Logic input voltage -0.3 15V
V
i
/dt Allowed output slew rate 50V/ns
out
Total power dissipation (TA = 25 °C) 800mW
tot
Junction temperature 150°C
T
J
Storage temperature -50 150°C
stg
-21 V
boot
- 0.3 V
out
+0.3V
boot
+ 0.3V
boot
Note:ESD immunity for pins 12, 13 and 14 is guaranteed up to 1 kV (Human body model)
4.2 Thermal data
Table 5.Thermal data
Symbol Parameter SO-14DIP-14 Unit
R
th(JA)
Thermal resistance junction to ambient165100°C/W
6/20Doc ID 14494 Rev 5
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