The L6386E is an high-voltage device,
manufactured with the BCD “off-line” technology.
It has a driver structure that enables to drive
independent referenced channel power MOS or
IGBT. The high-side (floating) section is enabled
to work with voltage rail up to 600 V. The logic
inputs are CMOS/TTL compatible for ease of
interfacing with controlling devices.
Note:ESD immunity for pins 12, 13 and 14 is guaranteed up to 900 V (human body model)
1.2 Thermal data
Table 2.Thermal data
Symbol Parameter SO-14 DIP-14Unit
R
Thermal resistance junction to ambient165100°C/W
th(JA)
1.3 Recommended operating conditions
Table 3.Recommended operating conditions
Symbol Pin Parameter Test condition MinTypMaxUnit
V
V
BS
f
sw
V
T
1. If the condition Vboot - Vout < 18 V is guaranteed, Vout can range from -3 to 580 V
2. VBS = V
12Output voltage
out
(2)
14Floating supply voltage
Switching frequency HVG,LVG load CL = 1 nF400 kHz
cc
4Supply voltage 17V
J
Junction temperature -45 125 °C
- V
boot
out
Doc ID 13989 Rev 23/18
(1)
(1)
17 V
580 V
Pin connectionL6386E
2 Pin connection
Figure 2.Pin connection (Top view)
1
2
3
4
5
6
7PGND
D97IN521A
14
13
12
11
10
9
8
Table 4.Pin description
LIN
SD
HIN
V
CC
DIAG
CIN
SGND
N°PinTypeFunction
1 LIN I Low side driver logic input
2 SD
(1)
I Shut down logic input
3 HIN I High side driver logic input
4 VCC Low voltage supply
5 DIAG O Open drain diagnostic output
6 CIN I Comparator input
7 SGND Ground
8 PGND Power ground
(1)
9 LVG
O Low side driver output
10, 11 N.C. Not connected
V
boot
HVG
OUT
N.C.
N.C.
LVG
12 OUT O High side driver floating driver
(1)
13 HVG
14 V
1. The circuit guarantees 0.3 V maximum on the pin (@ Isink = 10 mA), with VCC > 3 V. This allows to omit
the “bleeder” resistor connected between the gate and the source of the external MOSFET normally used
to hold the pin low; the gate driver assures low impedance also in SD condition.