ST L6386 User Manual

L6386

L6386

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

HIGH VOLTAGE RAIL UP TO 600V

dV/dt IMMUNITY +- 50 V/nsec iN FULL TEMPERATURE RANGE

DRIVER CURRENT CAPABILITY: 400 mA SOURCE,

650 mA SINK

SWITCHING TIMES 50/30 nsec RISE/FALL WITH 1nF LOAD

CMOS/TTL SCHMITT TRIGGER INPUTS WITH HYSTERESIS AND PULL DOWN UNDER VOLTAGE LOCK OUT ON LOWER AND UPPER DRIVING SECTION INTEGRATED BOOTSTRAP DIODE OUTPUTS IN PHASE WITH INPUTS

DESCRIPTION

The L6386 is an high-voltage device, manufactured with the BCD ºOFF-LINEº technology. It has a Driver structure that enables to drive inde-

BLOCK DIAGRAM

SO14	DIP14
ORDERING NUMBERS:
L6386D	L6386

pendent referenced Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.

BOOTSTRAP DRIVER

						Vboot
					14	CBOOT
	VCC	UV	UV
					HVG	H.V.
	4	DETECTION	DETECTION	R
					DRIVER	HVG
				R
					13
	3			S
			LEVEL
	HIN					OUT
			SHIFTER
					12
						TO LOAD
			LOGIC		VCC
	2					LVG
	SD				9
					LVG	PGND
					DRIVER
	1				8
	LIN					DIAG
			VREF	-	5
				+
	SGND
	7				6	CIN

D97IN520D

July 1999

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L6386

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
Vout	Output Voltage	-3 to Vboot - 18	V
Vcc	Supply Voltage	- 0.3 to +18	V
Vboot	Floating Supply Voltage	-1 to 618	V
Vhvg	Upper Gate Output Voltage	- 1 to Vboot	V
Vlvg	Lower Gate Output Voltage	-0.3 to Vcc +0.3	V
Vi	Logic Input Voltage	-0.3 to Vcc +0.3	V
Vdiag	Open Drain Forced Voltage	-0.3 to Vcc +0.3	V
Vcin	Comparator Input Voltage	-0.3 to Vcc +0.3	V
dVout/dt	Allowed Output Slew Rate	50	V/ns
Ptot	Total Power Dissipation (Tj = 85 °C)	750	mW
Tj	Junction Temperature	150	°C
Ts	Storage Temperature	-50 to 150	°C

Note: ESD immunity for pins 12, 13 and 14 is guaranteed up to 900V (Human Body Model)

PIN CONNECTION

LIN	1	14	Vboot
SD	2	13	HVG
HIN	3	12	OUT
VCC	4	11	N.C.
DIAG	5	10	N.C.
CIN	6	9	LVG
SGND	7	8	PGND

D97IN521A

THERMAL DATA

Symbol			Parameter	SO14	DIP14	Unit
Rth j-amb	Thermal Resistance Junction to Ambient			165	100	°C/W
PIN DESCRIPTION
N.	Name	Type		Function
1	LIN	I	Lower Driver Logic Input
2	SD (*)	I	Shut Down Logic Input
3	HIN	I	Upper Driver Logic Input
4	VCC	I	Low Voltage Supply
5	DIAG	O	Open Drain Diagnostic Output
6	CIN	I	Comparator Input
7	SGND		Ground
8	PGND		Power Ground
9	LVG (*)	O	Low Side Driver Output
10, 11	N.C.		Not Connected
12	OUT	O	Upper Driver Floating Driver
13	HVG (*)	O	High Side Driver Output
14	Vboot		Bootstrapped Supply Voltage

(*)The circuit guarantees 0.3V maximum on the pin (@ Isink = 10mA), with VCC >3V. This allows to omit the ºbleederº resistor connected between the gate and the source of the external MOSFET normally used to hold the pin low; the gate driver assures low impedance also in SD condition.

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						L6386
RECOMMENDED OPERATING CONDITIONS
Symbol	Pin	Parameter	Test Condition	Min. Typ.	Max.	Unit
Vout	12	Output Voltage		Note1	580	V
Vboot-	14	Floating Supply Voltage		Note1	17	V
Vout
fsw		Switching Frequency	HVG,LVG load CL = 1nF		400	kHz
Vcc	4	Supply Voltage			17	V
Tj		Junction Temperature		-45	125	°C

Note 1: if the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V.

ELECTRICAL CHARACTERISTICS

AC Operation (Vcc = 15V; Tj = 25°C)

Symbol Pin

Parameter

Test Condition

Min.

Typ.

Max.

Unit

ton	1.3	High/Low Side Driver Turn-On
	vs 9,	Propagation Delay
toff	13	High/Low Side Driver Turn-Off
		Propagation Delay
tsd	2 vs	Shut Down to High/Low Side
	9,13	Propagation Delay

Vout = 0V	110	150	ns
Vout = 0V	105	150	ns
Vout = 0V	105	150	ns

tr	13,9	Rise Time	CL = 1000pF		50		ns
tf	13,9	Fall Time	CL = 1000pF		30		ns
DC Operation (Vcc = 15V; Tj = 25°C)
Symbol	Pin	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Low Supply Voltage Section
Vcc	4	Supply Voltage				17	V
Vccth1		Vcc UV Turn On Threshold		11.5	12	12.5	V
Vccth2		Vcc UV Turn Off Threshold		9.5	10	10.5	V
Vcchys		Vcc UV Hysteresis			2		V
Iqccu		Undervoltage Quiescent Supply Current	Vcc ≤ 11V		200		μA
Iqcc		Quiescent Current	Vcc = 15V		250	320	μA
Bootstrapped Supply Section
Vboot	14	Bootstrapped Supply Voltage				17	V
Vbth1		Vboot UV Turn On Threshold		10.7	11.9	12.9	V
Vbth2		Vboot UV Turn Off Threshold		8.8	9.9	10.7	V
Vbhys		Vboot UV Hysteresis			2		V
Iqboot		Vboot Quiescent Current	Vout = Vboot			200	μA
Ilk		Leakage Current	Vout = Vboot = 600V			10	μA
Rdson		Bootstrap Driver on Resistance (*)	Vcc ≥ 12.5V; Vin = 0V		125		Ω
Driving Buffers Section
Iso	9, 13	High/Low Side Driver Short Circuit	VIN = Vih (tp < 10μs)	300	400		mA
		Source Current
Isi		High/Low Side Driver Short Circuit		500	650		mA
		Sink Current
Logic Inputs
Vil	1,2,3	Low Level Logic Threshold Voltage				1.5	V
Vih		High Level Logic Threshold Voltage		3.6			V
Iih		High Level Logic Input Current	VIN = 15V		50	70	μA
Iil		Low Level Logic Input Current	VIN = 0V			1	μA

(*) RDSON is tested in the following way: RDSON = (VCC − VCBOOT1) − (VCC− VCBOOT2)

I1(VCC,VCBOOT1) − I2(VCC,VCBOOT2)

where I1 is pin 8 current when VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2.

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