The L6385E is an high-voltage device,
manufactured with the BCD"OFF-LINE"
technology. It has an Half - Bridge Driver structure
that enables to drive independent referenced N
Channel Power MOS or IGBT. The High Side
(Floating) Section is enabled to work with voltage
Rail up to 600V. The Logic Inputs are CMOS/TTL
compatible for ease of interfacing with controlling
devices.
Note:ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)
1.2 Thermal data
Table 2.Thermal data
Symbol Parameter SO-8 DIP-8Unit
R
Thermal Resistance Junction to ambient150100°C/W
th(JA)
1.3 Recommended operating conditions
Table 3.Recommended operating conditions
Symbol Pin Parameter Test condition MinTypMaxUnit
V
out
V
BS
f
sw
V
cc
T
1. If the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V
2. VBS = V
6 Output voltage
(2)
8 Floating supply voltage
Switching frequency HVG,LVG load CL = 1nF 400 kHz
3 Supply voltage 17V
J
Junction temperature -45 125 °C
- V
boot
out
3/16
(1)
(1)
17 V
580 V
Pin connectionL6385E
2 Pin connection
Figure 2.Pin connection (Top view)
Table 4.Pin description
LIN
HIN
V
GND
1
2
3
CC
4LVG
D97IN517A
V
8
boot
HVG
7
OUT
6
5
N°PinTypeFunction
1 LIN I Low side driver logic input
2 HIN I High side driver logic input
3 V
Low voltage power supply
cc
4 GND Ground
5 LVG
(1)
O Low side driver output
6 VOUT O High side driver floating reference
7 HVG
8 V
1. The circuit guarantees 0.3V maximum on the pin (@ Isink = 10mA). This allows to omit the "bleeder"
resistor connected between the gate and the source of the external MOSFET normally used to hold the pin
low.