The L6384E is an high-voltage device,
manufactured with the BCD"OFF-LINE"
technology. It has an Half - Bridge Driver structure
that enables to drive N-channel Power MOS or
IGBT. The High Side (Floating) Section is enabled
to work with voltage Rail up to 600V. The Logic
Inputs are CMOS/TTL compatible for ease of
interfacing with controlling devices. Matched
delays between Low and High Side Section
simplify high frequency operation. Dead time
setting can be readily accomplished by means of
an external resistor.
1. The device has an internal Clamping Zener between GND and the Vcc pin, It must not be supplied by a
Low Impedence Voltage Source.
Output voltage -3 to V
out
Supply voltage
cc
I
Supply current
s
Floating supply voltage -1 to 618 V
boot
High side gate output voltage -1 to V
hvg
Low side gate output voltage -0.3 to Vcc +0.3 V
lvg
Logic input voltage -0.3 to Vcc +0.3 V
V
i
Shut down/dead time voltage -0.3 to Vcc +0.3 V
sd
(1)
(1)
boot
- 0.3 to 14.6 V
25 mA
boot
Allowed output slew rate 50 V/ns
Total power dissipation (Tj = 85 °C) 750 mW
tot
Junction temperature 150 °C
J
Storage temperature -50 to 150 °C
s
-18 V
V
Note:ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)
1.2 Thermal data
Table 2.Thermal data
Symbol Parameter SO-8 DIP-8Unit
Thermal Resistance Junction to ambient150100°C/W
R
th(JA)
3/17
Electrical dataL6384E
1.3 Recommended operating conditions
Table 3.Recommended operating conditions
Symbol Pin Parameter Test condition MinTypMaxUnit
V
out
V
BS
f
sw
V
cc
T
1. If the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V.
2. VBS = V
6 Output Voltage
(2)
8 Floating Supply Voltage
Switching Frequency HVG,LVG load CL = 1nF 400 kHz
2 Supply Voltage V
j
Junction Temperature -45 125 °C
- V
boot
out
(1)
(1)
580 V
17 V
clamp
V
4/17
L6384EPin connection
2 Pin connection
Figure 2.Pin connection (Top view)
1
Table 4.Pin description
IN
V
CC
DT/SD
GND
2
3
4LVG
D97IN519
8
7
6
5
N°PinTypeFunction
1 IN I
2 V
cc
Logic Input: it is in phase with HVG and in opposition of phase with LVG. It
is compatible to V
voltage. [V
CC
il Max
Supply input voltage: there is an internal clamp [Typ. 15.6V]
High impedance pin with two functionalities. When pulled lower than V
[Typ. 0.5V] the device is shut down. A voltage higher than Vdt sets the
dead time between high side gate driver and low side gate driver. The
dead time value can be set forcing a certain voltage level on the pin or
connecting a resistor between pin 3 and ground. Care must be taken to
3 DT/SD I
avoid below threshold spikes on pin 3 that can cause undesired shut down
of the IC. For this reason the connection of the components between pin 3
and ground has to be as short as possible. This pin can not be left floating
for the same reason. The pin has not be pulled through a low impedance
, because of the drop on the current source that feeds Rdt. The
to V
CC
operative range is: Vdt....270K ⋅ Idt, that allows a dt range of 0.4 - 3.1µs.
4 GND Ground
V
BOOT
HVG
VOUT
= 1.5V, V
ih Min
= 3.6V]
dt
Low Side Driver Output: the output stage can deliver 400mA source and
650mA sink [Typ. Values]. The circuit guarantees 0.3V max on the pin (@
I
5 LVG O
sink
allows to omit the bleeder resistor connected between the gate and the
source of the external mosfet normally used to hold the pin low; the gate
driver ensures low impedance also in SD conditions.
6 V
O
out
High Side Driver Floating Reference: layout care has to be taken to avoid
below ground spikes on this pin.
High Side Driver Output: the output stage can deliver 400mA source and
650mA sink [Typ. Values]. The circuit gurantees 0.3V max between this pin
7 HVG O
and V
threshold. This allows to omit the bleeder resistor connected between the
gate and the source of the external mosfet normally used to hold the pin
low; the gate driver ensures low impedance also in SD conditions.
Bootstrap Supply Voltage: it is the high side driver floating supply. The
8 Vboot
bootstrap capacitor connected between this pin and pin 6 can be fed by an
internal structure named "bootstrap driver" (a patented structure). This
structure can replace the external bootstrap diode.
= 10mA) with VCC > 3V and lower than the turn on threshold. This