Datasheet L6377D, L6377 Datasheet (SGS Thomson Microelectronics)

L6377

0.5A HIGH-SIDE DRIVER

INTELLIGENTPOWER SWITCH

PRODUCT PREVIEW

0.5 A OUTPUT CURRENT
8 TO 35V SUPPLY VOLTAGE RANGE
EXTERNALLY PROGRAMMABLE CURRENT

LIMIT
NON-DISSIPATIVE OVER-CURRENT PRO-

TECTION
THERMALSHUTDOWN
UNDER VOLTAGE LOCKOUT WITH HYS-

TERESYS
DIAGNOSTIC OUTPUT FOR UNDER VOLT-

AGE, OVER TEMPERATURE AND OVER
CURRENT

EXTERNALASYNCHRONOUSRESETINPUT
PRESETTABLE DELAY FOR OVERCUR-

RENT DIAGNOSTIC
OPENGROUNDPROTECTION
PROTECTION AGAINST SURGE TRAN-

SIENT (IEC 801-5)
IMMUNITY AGAINST BURST TRANSIENT

(IEC801-4)
ESD PROTECTION (HUMAN BODY MODEL

2KV)

±

BLOCK DIAGRAM

MULTIPOWER BCD TECHNOLOGY

MINIDIP

ORDERING NUMBERS: L6377 (MINIDIP)

L6377D (SO)

SO14

DESCRIPTION

This device is a monolithic Intelligent Power
Switch in Multipower BCD Technology for driving
inductive,capacitiveor resistive loads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device inher­ently indistructible and suitable for general pur­pose industrialapplications.

V

S

V

CHARGE

PUMP

+

-

1.3V

R

DIAG

February 1996

This is advanced information on a new product now in development or undergoing evaluation. Details are subjectto changewithoutnotice.

+

-1.3V

DRIVER

OVT UV

S

R

S

UV

SHORT CIRCUIT

CONTROL

CURRENT

LIMIT

OVCIN+

DELAY

GND

OUT

R

SC

ON DELAY

C

DON

D94IN075D

1/11

L6377

ABSOLUTE MAXIMUM RATINGS

Symbol Pin Parameter Value Unit

V

s

Supply Voltage (t

3

Supply Voltage (DC) 40 V

s -Vout 3 vs 2 Supply to Output Differential voltage internally limited

V

V

od

I

od

I

RESET

RESET Reset Input Voltage -0.3 to 40 V

V

I

out

V

out

E

il

P

tot

V

diag

I

diag

I

i

V

i

T

op

T

j

T

stg

Externally Forced Voltage -0.3 to 7 V

5

Externally Forced Current ±1mA
Reset Input Current (forced)

4

Output Current (see also I

2

Output Voltage internally limited
Total Energy Inductive Load (Tj= 125°C) 50 mJ
Power Dissipation internally limited
External voltage -0.3 to 40 V

6

Externally forced current -10 to 10 mA
Input Current 20 mA

7

Input Voltage -10 to Vs+0.3 V
Ambient temperature, operating range -25 to 85
Junction temperature, operating range (see

Overtemperature Protection)
Storage temperature -55 to 150 °C

< 10ms) 50 V

w

2mA

±

) internally limited

sc

-25 to 125 °C

C

°

PIN CONNECTION (Top view)

GND

OUT

V

R

SC

2

S

3
4

D94IN054D

8
7
6
5

RESET1
IN+
DIAG
ON DELAY

N.C.

GND

OUT

V

R

SC

N.C.
N.C.

14
2
3

S

4
5
6
7

D96IN368

13

12

11

10

9
8

N.C.1
RESET
IN+
DIAG
ON DELAY
N.C.
N.C.

2/11

PIN DESCRIPTION

No Pins Description

1 GND Ground pin.
2 OUT High side output. Controlled output withcurrent limitation.
3V
4 Rsc Current limiting setting.
5 ON DELAY Delay setting for overcurrent diagnostic
6 DIAG Diagnostic open drain output for overtemperature, under voltage and overcurrent
7 IN+ Comparator non inverting input
8 RESET Asynchronous reset input

S

Supply voltage. Range with under voltage monitoring

THERMAL DATA

Symbol Parameter MINIDIP SO14 Unit

R

th j-amb

Thermal Resistance, Junction Ambient Max. 100 150 °C/W

L6377

3/11

L6377

ELECTRICALCHARACTERISTICS (Vs= 24V;Tj= -25 to 125°C; unlessotherwisespecified.)
DC OPERATION

Symbol Pin Parameter Test Condition Min. Typ. Max. Unit

V

smin

V

s

V

sth

V

shys

I

q

I

qo

ith

V

V

iths

V

il

ih Input High Level Voltage Vs< 18V 2 V

V

I

ib

V

rth

V

rl

V

rh

I

rb

I

dch

V

rsc

I

rsc

dlkg

I

diag Diagnostic Output Voltage Drop Idiag =5mA; 1.5 V

V

V

don

I

olk

V

ol

V

cl

I

sc

T

max

T

hys

Supply Voltage for Valid
Diagnostic

Operative Supply Voltage 8 24 35 V

3

Under VoltageLower Threshold 7 8 V
Under VoltageHysteresis 300 500 700 mV
Quiescent Current Output Open 800
Quiescent Current Output On 1.6 mA
Input Threshold Voltage 0.8 1.3 2 V
InputThreshold Hysteresis 50 400 mV
InputLow LevelVoltage -7 0.8 V

7

Input Bias Current Vi= -7 to 15V -250 250 µA
Reset Threshold Voltage 0.8 1.3 2 V
ResetLow Level Voltage 0 0.8 V

8

ResetHigh LevelVoltage 2 40 V
ResetPull Down Current 5 µA
Delay Capacitor Charging

5

Current
Output Voltage on R

4

pin Rsc pin floating 1.25 V

sc

Output Current on Rscpin Rsc pin shorted to GND 300 µA
Diagnostic Output Leakage Curr. Diagnostic Off 25 µA

6

Output Voltage Drop I

Output Leakage Current Vi= LOW; V
Output Low State Voltage Vi= HIGH; pin floating 0.8 1.5 V

2

Internal Voltage Clamp (Vs-V

out

)

Short CircuitOutput Current

Over Temperature Upper
Threshold

Over Temperature Hysteresis 20 °C

= >0.5mA;

I

diag

= 1.5V;

V

diag

s> 18V 2 15 V

V

ON DELAY pin
shorted to Ground

out =625mA; T

I

=625mA; Tj=125°C 400 550 mV

out

=200mA

I

o

single pulsed =300µs

=25°C 250 350 mV

j

=0 100 µA

out

Vs=8 to 35V; Rl=2Ω;

=5 to 30K

R

sc

V

=8 to 35V; Rl=2

s

<5KΩ

R

sc

Ω

Ω;

435V

-3 V

s

2.5 µA

48 53 58 V

=KΩ A

5/R

sc

0.75 1.1 1.5 A

150 °C

A

µ

4/11

AC OPERATION

Symbol Pin Parameter Test Condition Min. Typ. Max. Unit

t

r-tf

t

d Delay Time 5 µs

dV/dt

t

ON

t

OFF

f

max

Rise or Fall Time

2

Slew Rate (Rise and Fall
Edge)

On time during Short

5

Circuit Condition
Off time during Short

Circuit Condition
Maximum Operating

Frequency

V

= 24V; Rl=70

s
l toground

R
V

= 24V; Rl=70

s

to ground

R

l

50pF < C

DON

Ω

Ω

0.7 1 1.5 V/µs

< 2nF 1.28

20

64 t

25 kHz

SOURCEDRAIN NDMOS DIODE

Symbol Parameter Test Condition Min. Typ. Max. Unit

V

fsd

I

fp

t

rr

t

fr

Forward On Voltage I

= 625mA 1 1.5 V

fsd

Forward Peak Current tp= 10ms; duty cycle = 20% 1.5 A
Reverse Recovery Time I

= 500mA; dI

fsd

/dt = 25A/µs 200 ns

fsd

Forward Recovery Time 50 ns

L6377

s

µ

s/pF

µ

ON

Figure 1: UndervoltageComparatorHysteresis

Figure 2: Switching Waveforms

V

in

50% 50%

t

d

V

out

V

shys

D94IN126A

V

sth

t

d

V

s

t

90% 90%

50% 50%

10% 10%

t

r

t

f

D94IN127A

t

5/11

L6377

INPUT SECTION

An Input and Asynchronous RESET, both
TTL/CMOS compatible with wide voltage range
and high noise immunity (thanks to a built in hys­teresis) are available.

OVER TEMPERATURE PROTECTION (OVT)

An on-chip Over TemperatureProtectionprovidse
an excellent protection of the device in extreme
conditions. Whenever the temperature - meas­ured on a central portion of the chip- exceeds
Tmax=150 C (typical value) the device is shut off,
and the DIAG output goes LOW.

Normal operation is resumed as the chip tem­perature (normally after few seconds) falls below
Tmax-Thys=130 C (typical value). The hysteresis
avoid thats an intermittent behaviourtake place.

UNDER VOLTAGEPROTECTION(UV)

The supply voltageis expectedto rangefrom 8 to
35 V. In this range the device operates correctly.
Below 8 V the overall system has to be consid­ered not reliable. To avoid any misfunctioningthe
supply voltage is continuously monitored to pro­vide an under voltage protection. As Vs falls be­low Vsth-Vshys (typically 7.5 V, see fig.1) the
output powerMOS is switched off and DIAG out­put goes LOW. Normal operation is resumed as
soon as Vs exceeds Vsth. The hysteretic behav­iour prevents intermittent operation at low supply
voltage.

OVERCURRENT OPERATION

In order to implement a short circuit protection the
output power MOS is driven in linearmode to limit
the output current to the Isc value.This Isc limit is
externallysettable by means of an external1/4 W
resistor connected from Rsc pin and GND. The
value of the resistor must be chosen accordingto
the following formula:

Isc (A) = 5/Rsc (kohm)

with

5 < Rsc < 30 (kohm)

For

Rsc< 5 (kohm)
Isc is limited toIsc=1.1A (typicalvalue).
This condition (current limited to the Isc value)

lasts for a Ton time interval, that can be set by
meansof a capacitor(Cdon) connected to the ON
DELAY pin according to the following formula:

Ton = 1.28 msec/pF

for

50pF<Cdon<2nF

After the Ton interval has expired the output
power MOS is switched off for the Toff time inter­val with:

Toff= 64*Ton.

Figure 3: ShortCircuit OperationWaveforms

OUTPUT

CURRENT

I

sc

I

out

t<t

ON

DIAG

(active low)

6/11

t

ON

t

OFF

Short CircuitShort Circuit

t

ON

t

OFF

D94IN105

Time

Time

L6377

When also the Toff interval has expired, the out­put power MOS is switched ON.

Now two conditionsmay occur

- the overload is still present. In this case the out­put power MOS is again driven in linear mode
(limiting the output currentto Isc) for another Ton,
starting a new cycle, or

- the overload condition is removed, and the out­put power MOS is no longer driven in linear
mode.

All theseoccurrences are presented on the DIAG
pin (see fig 2). We call this unique feature Non
Dissipative Short Circuit Protection and it en­sures a very safe operation even in permanent
overload conditions. Note that, of course, choos­ing the mostappropriatevalue for the Ton interval
(i.e. the value of the Cdon capacitor) a delay (the
Ton itself)will prevent that a misleadingShort Cir­cuit information is presented on the DIAG output,
when driving capacitive loads (that acts like short
circuit in the very beginning) or Incandescent
Lamp (a cold filament has a very low resistive
value).

The Non Dissipative Short Circuit Protection can
be disabled (keepingTon = 0 but with the output
current still limited to Isc, and Diagnostic dis­abled) simply shorting to ground the the ON DE­LAY pin.

proper thermal design of the board. If, for what­ever reason (load current or inductive value too
big) the peak power dissipationis too high, an ex­ternal Zener plus Diode arrangement, can per­form a demagnetisationversus Ground or versus
Vs (see fig 5 and 6). The breakdown voltage of
the external Zener Diode must be chosen consid­ering the internal clamping voltage (Vcl) and the
supplyvoltage(Vs) according to:

Vz< Vcl(min)-Vs(max)

for demagnetisationversusGroundor

Vs(max)<Vz<Vcl(min)

for demagnetisationversusVs.
Figure4: InputComparator Hysteresis

V

out

V

s

100mV

100mV

DEMAGNETISATIONOF INDUCTIVELOADS

The L6377 has an internal clamping zener diode
able to demagnetise inductive loads. Note that
the limitation comes from the peak power that the
package can handle. Attention must be paid to a

V

i-

D94IN079

V

i+

7/11

L6377

Figure 5: External DemagnetisationCircuit (versusground)

V

S

R

S

CURRENT

LIMIT

DRIVER

UV

OVC

OUT

CIRCUIT

CONTROL

VZ<V

SHORT

cl (min)-VS (max)

Figure 6: External DemagnetisationCircuit (versusVS)

V

S

R

S

CURRENT

LIMIT

DRIVER

OVC

D94IN112

V

OUT

V

Z

S

V

Z

8/11

V

S (max)

<VZ<V

UV

SHORT

cl (min)

CIRCUIT

CONTROL

D94IN111A

MINIDIP PACKAGEMECHANICAL DATA

L6377

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.32 0.131

a1 0.51 0.020

B 1.15 1.65 0.045 0.065

b 0.356 0.55 0.014 0.022

b1 0.204 0.304 0.008 0.012

D 10.92 0.430
E 7.95 9.75 0.313 0.384

e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300

F 6.6 0.260

I 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060

mm inch

9/11

L6377

016019 MIN TYP MAX MIN TYP MAX

A 1.75 0.069

a1 0.1 0.2 0.004 0.008
a2 1.6 0.063

b 0.35 0.46 0.014 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.020

c1 45 1.772

D 1 8.55 0.039 0.337
E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 7.62 0.300

F 1 3.8 0.039 0.150
G 4.6 5.3 0.181 0.209

L 0.5 1.27 0.020 0.050

M 0.68 0.027

S 8 0.315

10/11

L6377

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patentrightsof SGS-THOMSON Microelectronics. Specification mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS­THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.

 1996SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia- Malta - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A.

11/11