ST L6353 User Manual

L6353

SMART DRIVER FOR POWER MOS & IGBT

PEAK HIGH OUTPUT CURRENT CAPABIL-

ITY(+8A)

WIDE SUPPLY VOLTAGE RANGE (12.5 TO

18V)

0 TO–7.5V NEGATIVE BIAS VOLTAGESUP-

PLY RANGE

OVER CURRENT AND DESATURATION

PROTECTION OF THE EXTERNAL POWER

DEVICE(EXTERNALLY PROGRAMMABLE)

LATCH-UPPROTECTION(FOR IGBT)

TWOSTEPS TURN-ON (PROGRAMMABLE)

PROTECTION AGAINST POSITIVE SUPPLY

UNDER-VOLTAGE

INPUT COMPATIBLE WITH OPTOCOUPLER

OR PULSETRANSFORMER

PROGRAMMABLETURN-ON DELAY

THERMAL PROTECTION WITH ON-CHIP

OVER-TEMPERATURE ALARM AND TURN-

OFF PROCEDURE

OPERATINGFREQUENCY UP TO 100kHz

DESCRIPTION

The L6353 device is a smart driver, with all the

driveandprotectionknow-how”on board”.

Available in both DIP and SO package, it can be

triggeredwitha logiclevelorwith the signalfroman

optocouplerora pulsetransformer.It filtersparasitic

inputsignalsand drives any MOSor IGBT.

February 2000



DIP16

2.5V

300µA

+

−

1.25V

FILTER

200ns

1.25V 3.75V

3.15V

+

−

LOGIC

+

−

+

−

4V

ON_SENSE

ON_LEV_PROG

MON_DELAY

V

SS

OUT2

OUT1

V

POS

ALARM

INV_OUT

INPUT

SELECT

DELAY

COM

D94IN106B

OUT1

CLAMPING

CLAMP_PROG

THERMAL

SHUTDOWN

+

−

3.15V

7.5V

−

+

SUPPLY

UV SENSE

REFERENCES

REF

V

CC

BLOCK DIAGRAM

SO16

ORDERING NUMBERS: L6353 (DIP)

L6353D (SO)

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查询L6353供应商

DESCRIPTION (continued)

It monitors theon-state voltage drop of thedriven

power device and protectsit againstoverload and

short circuit.

The on-state voltage drop level is externallypro-

grammable from 5 to 15V. This function is inhib-

ited during the turn-on of the external power de-

vice for an externally programmableperiod.

An internal inhibition time of 200ns avoids false

triggering.

Overload or overheating are signalled on an

alarmoutput. If temperature continuestoincrease

the power output is switched off and maintained

in the off-state until the temperature decreases

below the low threshold. A programmable turn-on

delay avoids cross conduction in bridge configu-

rations.

To preservethe externalpower device (especially

IGBT) from the risk of latch-up, the gate voltage

can be risen in two different steps (of which the

first is externally programmablefrom7 to 11V).

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

Supply Voltage referred to COM pin 20 V

V

SS

Negative Supply Voltage referred to COM pin – 8 to 0 V

V

POS

-V

OUT1

Collector-Emitter Voltage of High Side NPN 25 V

V

OUT2

-V

SS

Drain-Source Voltage of Low Side DMOS 25 V

V

EXT1

Externally Forced Voltage (pin 9) -0.3 to V

CC

V

V

EXT2

Externally Forced Voltage (pins 4,7,10, 11, 12) -0.3 to 7 V

I

DELAY

Sink Current pin Delay 3 mA

I

MON_DELAY

Sink Current PinMon_Delay 3 mA

V

ON_SENSE

Voltage on ON_SENSE Pin VSS-0.3 to V

CC

V

I

OUT1

Positive Output Current (tp ≤1ms) (peak) 8 A

I

OUT2

Negative Output Current (tp ≤1ms) (peak) 8 A

I

INV_OUT

Output Current in INV_OUT Pin ±20 mA

I

ALARM

Output Current in ALARM Pin ±20 mA

P

tot

Total Power Dissipation internally limited

T

amb

Operating Temperature Range -25 to +85

°

C

T

stg

Storage Temperature -50 to +150 °C

THERMAL DATA

Symbol Parameter DIP16 SO16 Unit

R

thj-ambient

Thermal Resistance Junction-ambient Max 80 90 °C/W

OUT1

V

CC

V

POS

MON_DELAY

ALARM

VREF

INV_OUT

1

3

2

4

5

6

7

SELECT

V

SS

ON_SENSE

COM

OUT2

CLAMP_PROG

ON_LEV_PROG

16

15

14

13

12

10

11

D94IN113A

DELAY

8 INPUT9

PIN CONNECTION (topview)

L6353

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PIN FUNCTIONS

N. Name Function

1 OUT1 Output of high side driver (emitter of power NPN transistor).

2V

CC

Positive Supply Voltage (referred to COM).

See under voltage lockout functioning

3V

POS

Positive Bias Voltage (collector of theNPN power transistor).

4 CLAMP_PROG FirstStep of theGate Voltage Programming.

The programming is achieved setting an appropriate voltageon this pin (i.e. usinga resistence

voltage divider).

5 INV-OUT InvertedOutputDriverStatus.

Thebufferoutputis ableto drivesome auxiliary circuit(i.e. a LED).

6 ALARM Diagnostic OutputSignal. A fault condition is signalled by this output buffer.

7 MON_DELAY V

ON

Monitor Delay. An R-C network connected between this, the COM and the V

REF

pins,

define t

MON_DELAY

time interval(see fig 4)

8V

REF

Output of the 5V/10mA internalvoltage reference.

9 INPUT Input signal.

The driving signal can be a logic level either active LOW (inverted mode) or HIGH (direct

mode) in the Logic Level or a pulse in the PulseTransformer Mode (see Figure 2)

10 DELAY On Triggering Delay. An R-C network connected between this, the COM and the V

REF

pins,

definethe t

DELAY

time interval(see fig 4)

11 SELECT Select the direct/inverted mode in the Logic Level Mode. It’s also the reference pin in Pulse

transformer mode.

12 ON_LEV_PROG V

ON

level programming.

This pin is used to set the V

ON

monitor level. The programming is achieved setting an

appropriate voltage on this pin (i.e. using a resistive divider).

13 ON_SENSE On State Monitor.

Thispin is used to monitor the turning on of the external power device.

14 V

SS

Negative supply voltage (referred to the COM).

This pin is the source of the lowside driver DMOS.

15 COM Ground

16 OUT2 Output of the low side driver (drain of the DMOS).

L6353

3/11

DC ELECTRICAL CHARACTERISTICS (V

POS

=V

CC

=15V; V

SS

= -5 to 0V; T

j

= -25 to +125°C; unless

otherwise specified)

Symbol Pin Parameter Test Condition Min. Typ. Max. Unit

V

drop

1V

POS

-V

OUT1

I

OUT1

= 2A 2.5 V

V

CC

2 Operating Supply Voltage (referred to COM pin) 12.5 18 V

V

CCth1

Under Voltage Upper

Threshold

10.5 11.5 12.5 V

V

CCth2

Under Voltage Lower

Threshold

10 11 12 V

V

CChys

Under VoltageHysteresis 0.3 0.5 0.7 V

I

CCq

QuiescentSupply Current 5 mA

V

d

4, 12 Output Voltage pin floating 1.26 V

I

so

Sourced Current pin grounding 20 µA

I

si

Sinked Current pin at +5V -20

µ

A

V

drop_sig

5, 6 High State Output Voltage Drop I

out

= 20mA V

CC

–3 V

Low State Output Voltage Drop 3 V

V

ref

8 Output of Internal Voltage

Reference

I

ref

= 0A; T

j

=25

°

C 4.9 5 5.1 V

I

ref

< 10mA; T

j

=25

°

C 4.8 5.2 mA

R

in

7, 10 Comparator Input Resistance 100

Ω

V

dth

Comparator Threshold 3.15 V

R

ins

13 Input Resistance 75 KΩ

I

outs

Output Current pin grounded 200 µA

V

SS

14 OperatingNegative Bias

Voltage

(referred to COM) – 7 0 V

R

ON

16 On Resistance OUT2 to V

SS

); I

OUT2

= 2A 0.5 Ω

V

il

9 Low Level Voltage (Logic Level Mode) 0 1 V

V

ih

High Level Voltage (Logic Level Mode) 4 V

CC

V

I

in

Input Current 0<V

in

<V

CC

(Logic LevelMode)

–10 10

µ

A

t

inh

Inhibited Parasitic Pulse

Duration

(Logic LevelMode) 200 300 ns

V

ton

Turn-on Threshold Voltage Referred to V

sel

(Pulse Transformer Mode)

1.5 V

V

toff

Turn-off Threshold Voltage Referred to Vsel

(Pulse Transformer Mode)

– 1.5 V

V

sl

11 Low Level Voltage (Logic Level Mode) 0 1 V

V

sh

High Level Voltage (Logic Level Mode) 2 V

REF

V

I

sl

Current Output of SELECT Pin V

sl

= 0V (Logic Level Mode) 300 µA

V

sel

Output Voltage of SELECT Pin (Pulse Transformer Mode) 2.25 2.5 2.75 V

L6353

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