ST L6235 User Manual

THREE-PHASE BRUSHLESS DC MOTOR
OPERATING SUPPLY VOLTAGE FROM 8 TO 52V
5.6A OUTPUT PEAK CURRENT (2.8A DC)
R
OPERATING FREQUENCY UP TO 100KHz
NON DISSIPATIVE OVERCURRENT
DETECTION AND PROTECTION
DIAGNOSTIC OUTPUT
CONSTAN T t
SLOW DECAY SYNCHR. RECTIFICATION
60° & 120° HALL EFFECT DECODING LOGIC
BRAKE FUNCTION
TACHO OUTPUT FOR SPEED LOOP
CROSS CONDUCTION PROTECTION
THERMAL SHUTDOWN
UNDERVOLTAGE LOCKOUT
INTEGRATED FAS T FREEWEELING DIO DES
DESCRIPTION
The L6235 is a DMOS Fully Integrated Three-Phase Motor Driver with Overcurrent Protection.
Realized in MultiPower-BCD technology, the device
0.3 TYP. VA LUE @ Tj = 25 °C
DS(ON)
PWM CURRENT CONTROLLER
OFF
L6235
DMOS DRIVER FOR
PowerDIP24
(20+2+2)
L6235N L6235PD L6235D
combines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip.
The device includes all the circuitry needed to drive a three-phase BLDC motor including: a three-phase DMOS Bridge, a constant off time PWM Current Con­troller and the decoding logic for single ended hall sensors that generates the required s equence for the power stage.
Available in PowerDIP24 (20+2+2), PowerSO36 and SO24 (20+2+2) packages, the L6235 features a non­dissipative overcurrent protection on the high side Power MOSFETs and thermal shutdown.
PowerSO36
ORDERING NUMBERS:
SO24
(20+2+2)
BLOCK DIAGRAM
September 2003
VBOOT V
VCP
DIAG
EN
BRAKE
FWD/REV
H
3
H
2
H
1
RCPULSE
TACHO
BOOT
CHARGE
PUMP
TACHO
MONOSTABLE
10V 5V
VOLTAGE
REGULATOR
PROTECTION
OCD
HALL-EFFECT
SENSORS
DECODING
LOGIC
THERMAL
OCD1 OCD2
OCD
OCD3
ONE SHOT
MONOSTABLE
GATE
LOGIC
PWM
MASKING
TIME
V
BOOT
OCD1
10V
V
BOOT
OCD2
10V
V
BOOT
OCD3
10V
COMPARATOR
SENSE
VS
A
OUT
1
OUT
2
SENSE
A
VS
B
OUT
3
SENSE
B
+
-
VREF
RCOFF
D99IN1095B
1/25
L6235
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Test conditions Value Unit
V
V
OD
V
BOOT
VIN, V
V
REF
V
RCOFF
V
RCPULSE
V
SENSE
I
S(peak)
I
S
, T
T
stg
Supply Voltage VSA = VSB = V
S
Differential Voltage between:
, OUT1, OUT2, SENSEA
VS
A
and VSB, OUT3, SENSE
B
VSA = VSB = VS = 60V; V
SENSEA
Bootstrap Peak Voltage VSA = VSB = V Logic Inputs Voltage Range -0.3 to 7 V
EN
= V
S
SENSEB
S
= GND
60 V 60 V
VS + 10 V
Voltage Range at pin VREF -0.3 to 7 V Voltage Range at pin RCOFF -0.3 to 7 V Voltage Range at pin RCPULSE -0.3 to 7 V Voltage Range at pins SENSEA
and SENSE
B
Pulsed Supply Current (for each
and VSB pin)
VS
A
DC Supply Current (for each
and VSB pin)
VS
A
Storage and Operating
OP
V
= VSB = VS; T
SA
V
= VSB = V
SA
S
< 1ms 7.1 A
PULSE
-1 to 4 V
2.8 A
-40 to 150 °C
Temperature Range
RECOMMENDED OPERATING CONDITION
Symbol Parameter Test Conditions MIN MAX Unit
V
V
V
V
SENSE
I
OUT
T
f
SW
OD
REF
Supply Voltage VSA = VSB = V
S
Differential Voltage between:
, OUT1, OUT2, SENSEA and
VS
A
VS
, OUT3, SENSE
B
B
VSA = VSB = VS; V
SENSEA
= V
SENSEB
S
12 52 V
Voltage Range at pin VREF -0.1 5 V Voltage Range at pins SENSEA
and SENSE
B
DC Output Current VSA = VSB = V Operating Junction Temperature -25 125 °C
J
(pulsed tW < trr) (DC)
-6
-1
S
Switching Frequency 100 KHz
52 V
6 1
2.8 A
V V
2/25
THERMA L D ATA
Symbol Description PDIP24 SO24
PowerSO36
L6235
Unit
R
th(j-pins)
R
th(j-case)
R
th(j-amb)1
R
th(j-amb)1
R
th(j-amb)1
R
th(j-amb)2
Maximum Thermal Resistance Junction-Pins 18 14 °C/W Maximum Thermal Resistance Junction-Case 1 °C/W
MaximumThermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Ambient MaximumThermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Ambient
(1)
(2)
(3)
(4)
43 51 - °C/W
--35°C/W
--15°C/W
58 77 62 °C/W
(1) Mount ed on a multi-l ayer FR4 PCB wi t h a di ssipating copper sur face on the bottom side of 6 c m2 (with a thickness of 35 µm) . (2) Mount ed on a multi-l ayer FR4 PCB wi t h a di ssipating copper sur face on the top side of 6 cm2 (with a thi ck ness of 35 µm) . (3) Mounted on a multi-layer F R4 PCB with a di ssipating copper sur face on the top s id e of 6 cm2 (with a thi ck ness of 35 µm),
16 via holes and a ground layer.
(4) Mounted on a mult i- l ayer FR4 PCB wi t h out any heat-sinking surface on the board.
PIN CONNECTIONS (Top view)
H
DIAG
SENSE
RCOFF
OUT
GND GND
TACHO
RCPULSE
SENSE
FWD/REV
EN
1
1
2 3
A
4 5
1
6 7 8 9 10
B
11 12
D01IN1194A
PowerDIP24/SO24
GND
N.C.
H
24
3
H
23
2
VCP
22
OUT
21 20
VS
2
A
N.C.
VS
OUT
N.C. VCP
GND19 GND
18 17
VS 16 15 14 13
B
OUT
3
VBOOT
BRAKE
VREF
DIAG
SENSE
RCOFF
N.C.
OUT
N.C. N.C.
GND
2 3 4
A
5
2
7
H
8
2
H
3
H
10
1
11 12
A
13 14 15
1
16 17 18
D01IN1195A
PowerSO36
36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19
(5)
GND1 N.C. N.C. VS
B
OUT
3
N.C.6 VBOOT BRAKE VREF9 EN FWD/REV SENSE
B
RCPULSE N.C. TACHO N.C. N.C. GND
(5) The slug is internal l y connected to pins 1, 18, 19 and 36 (GND pi ns).
3/25
L6235
PIN DESCRIPTION
P ACKAGE
SO24/
PowerDIP24
PowerSO36
PIN # PIN #
110H 2 11 DIAG Open Drain
3 12 SENSE
4 13 RCOFF RC Pin RC Network Pin. A parallel RC network connected
5 15 OUT
6, 7,
18, 19
1, 18,
19, 36
8 22 TACHO Open Drain
9 24 RCPULSE RC Pin RC Network Pin. A parallel RC network connected
10 25 SENSE
11 26 FWD/REV Logic Input Selects the direction of the rotation . HIGH logic level
12 27 EN Lo gic Input Chip Enable. LOW log ic level switches OFF a ll Power
13 28 VREF Logic Input Current Controller Reference Voltage.
14 29 BRAKE Logic Input Brake Input pin. LOW logic level switches ON all High
15 30 VBOOT Supply Voltage Bootstrap Voltage needed for driving the u pper Power
16 32 OUT 17 33 VS
Name Type Function
1
Sensor Input Single Ended Hall Effect Sensor Input 1.
Overcurrent Detect ion an d The r mal P rotec tion p in. An
Output
internal open drain transistor pulls to GND when an overcurrent on one of the High Side MOSFETs is detected or during Thermal Protection.
Power Supply Half Bridge 1 and Half Bridge 2 Source Pin. This pin
A
must be connected together with pin SENSE Power Ground through a sensing power resistor.
between this pin and ground sets the Current Controller OFF-Time.
Power Output Output 1
1
GND GND Ground terminals. On PowerDIP24 and SO24
packages, these pins are also used for heat dissipation toward the PCB. On PowerSO36 package the slug is connected on these pins.
Frequency-to-Voltage open drain output. E very pulse
Output
from pin H
is shaped as a fixed and adjustable length
1
pulse.
between this p in and ground sets th e duration of the Monostable Pulse used for the Frequency-to-Voltage converter.
Power Supply Half Bridge 3 S ource Pin. This pin mu st be conn ected
B
together with p in SEN SE
to Power Ground through a
A
sensing power resistor. At this pin also the Inverting Input of the Sense Comparator is connected.
sets Forward Operation, whereas LOW logic level sets Reverse Operation. If not used, it has to be connected to GND or +5V..
MOSFETs. If not used, it has to be connected to +5V.
Do not leave this pin open or connect to GND.
Side Power MOSFETs, implementing the Brake Function. If not used, it has to be connected to +5V.
MOSFETs.
Power Output Output 3.
3
Power Supply Half Bridge 3 Power Supply Voltage. It must be
B
connected to the supply voltage together with pin VS
B
to
.
A
4/25
L6235
PIN DESCRIPTION
(continued)
PACKAGE
SO24/
PowerDIP24
PowerSO36
Name Type Function
PIN # PIN #
20 4 VS
Power Supply Half Bridge 1 and Half Bridge 2 Power Supply Voltage.
A
It must be connected to the supply voltage together
.
B
21 5 OUT
Power Output Output 2.
2
with pin VS
22 7 VCP Output Charge Pump Oscillator Output. 23 8 H 24 9 H
2 3
Sensor Input Single Ended Hall Effect Sensor Input 2. Sensor Input Single Ended Hall Effect Sensor Input 3.
ELECTRICAL CHARACTERISTICS
(VS = 48V , T
Symbol Parameter Test Conditions Min Typ Max Unit
V
Sth(ON)
V
Sth(OFF)
I
S
T
J(OFF)
Output DMOS Transistors
R
DS(ON)
I
DSS
Source Drain Diodes
V
SD
t
rr
t
fr
Logic Input (H1, H2, H3, EN, FWD/REV, BRAKE)
V
IL
V
IH
I
IL
I
IH
V
th(ON)
V
th(OFF)
V
thHYS
= 25 °C , unless otherwise specified)
amb
Turn ON threshold 6.6 7 7.4 V Turn OFF threshold 5.6 6 6.4 V Quiescent Supply Current All Bridges OFF;
Tj = -25 to 125°C
(6)
510mA
Thermal Shutdown Temperature 165 °C
High-Side Switch ON Resistance Tj = 25 °C 0.34 0.4
(6)
(6)
Low-Side Switch ON Resistance T
=125 °C
T
j
= 25 °C 0.28 0.34
j
=125 °C
T
j
Leakage Current EN = Low; OUT = V
CC
0.53 0.59
0.47 0.53 2mA
EN = Low; OUT = GND -0.15 mA
Forward ON Voltage ISD = 2.8A, EN = LOW 1.15 1.3 V Reverse Recovery Time If = 2.8A 300 ns Forward Recovery Time 200 ns
Low level logic input voltage -0.3 0.8 V High level logic input voltage 2 7 V Low level logic input current GND Logic Input Voltage -10 µA High level logic input current 7V Logic Input Voltage 10 µA Turn-ON Input Threshold 1.8 2.0 V Turn-OFF Input Threshold 0.8 1.3 V Input Thresholds Hysteresy s 0.25 0.5 V
5/25
L6235
ELECTRICAL CHARACTERISTICS
(V
= 48V , T
S
= 25 °C , unless otherwise specified)
amb
(continued)
Symbol Parameter Test Conditions Min Typ Max Unit
Switching Characteristics
(7)
I
t
D(on)EN
t
D(off)EN
t
D(on)IN
Enable to out turn-ON delay time Enable to out turn-OFF delay time
Other Logic Inputs to Output Turn-
(7
)
= 2.8 A, Resistive Load 110 250 400 ns
LOAD
I
= 2.8 A, Resistive Load 300 550 800 ns
LOAD
I
= 2.8 A, Resistive Load 2 µs
LOAD
ON delay Time
t
D(off)IN
Other Logic Inputs to out Turn-OFF
I
= 2.8 A, Resistive Load 2 µs
LOAD
delay Time
(7)
(7)
I
= 2.8 A, Resistive Load 40 250 ns
LOAD
I
= 2.8 A, Resistive Load 40 250 ns
LOAD
Tj = -25 to 125°C
(6)
0.6 1 MHz
t
RISE
t
FALL
t
DT
f
CP
Output Rise Time Output Fall Time
Dead Time 0.5 1 µs Charge Pump Frequency
PWM Comparator and Monostable
I
RCOFF
V
OFFSET
Source current at pin RC Offset Voltage on Sense
V
OFF
V
= 2.5 V 3.5 5.5 mA
RCOFF
= 0.5 V ±5 mV
ref
Comparator
t
prop
t
blank
Turn OFF Propagation delay Internal Blanking Time on Sense
(8)
V
= 0.5 V 500 ns
ref
s
Comparator
t
ON(min)
t
I
BIAS
Minimum on Time PWM Recirculatio nTim e R
OFF
OFF
R
OFF
= 20k ; C = 100k ; C
OFF
OFF
=1nF
=1nF
1.5 2 µs 13 61
Input Bias Current at pin VREF 10 µA
Tacho Monostable
I
RCPULSE
t
PULSE
R
TACHO
Source Current at pin RCPULSE V Monostable of Time R
RCPULSE
PUL
R
PUL
Open Drain ON Resistance 40 60
= 2.5V 3.5 5.5 mA = 20k ; C = 100k ; C
PUL
PUL
=1nF
=1nF
12 60
Over Current Detection & Protection
I
SOVER
R
OPDR
t
OCD(ON)
t
OCD(OFF)
(6) Teste d at 2 5°C in a restricted range and guaranteed by ch aracterization. (7) See Fig. 1.
(8) Measured applying a voltage of 1V to pin SEN S E and a voltage drop from 2V t o 0V to pin VREF.
(9) See Fig. 2.
Supply Overcurrent Protection Threshold
Open Drain ON Resistance I OCD high level leakage current V
I
OH
OCD Turn-ON Delay Time OCD Turn-OFF Delay Time
(9)
(9)
= -25 to 125°C
T
J
= 4mA 40 60
DIAG
= 5V 1 µA
DIAG
I
= 4mA; C
DIAG
I
= 4mA; C
DIAG
(6)
< 100pF 200 ns
DIAG
< 100pF 100 ns
DIAG
4.0 5.6 7.1 A
µs µs
µs µs
6/25
Figure 1. Switching Characteristic Definition
EN
V
th(ON)
V
th(OFF)
I
OUT
90%
10%
D01IN1316
t
D(OFF)EN
t
FALL
Figure 2. Ove rcurrent Detect i on Timi ng Definition
I
OUT
I
SOVER
t
D(ON)EN
t
RISE
L6235
t
t
ON
BRIDGE
OFF
V
DIAG
90%
10%
t
OCD(ON)
t
OCD(OFF)
D02IN1387
7/25
L6235
8
CIRCUIT DESCRIPTION
POWER STAGES and CHARGE PUMP
The L6235 integrates a Three-Phase Bridge, which consists of 6 Power MOSFETs connected as shown on the Block Diagram. Each Power MOS has an R
= 0.3Ω (typical value @25°C) with intrinsic
DS(ON)
fast freewheeling diode. Switching patterns are gen­erated by the PWM Current Controller and the Hall Effect Sensor Decoding Logic (see relative para­graphs). Cross conduc tion protec tion is impl emented by using a dead time (t
= 1µs typical value) set by
DT
internal timing circuit between the turn off and turn on of two Power MOSFETs in one leg of a bridge.
Pins VS the supply voltage (V
and VSB MUST be connected together to
A
).
S
Using N-Channel Power MOS for the upper transis­tors in the bridge requires a gate drive voltage above the power supply voltage. The Bootstrapped Supply (V
) is obtained through an internal osci llator and
BOOT
few external components to realize a charge pump circuit as shown in Figure 3. The oscillator output (pin VCP) is a squar e wave at 600K Hz (typi cally) wi th 10V amplitude. Recommended values/part numbers for the charge pump circuit are shown in Table1.
LOGIC INPUTS
Pins FWD/REV, BRAKE, EN, H1, H2 and H3 are TTL/ CMOS and µC compatible logic inputs. The internal structure is shown in Figure 4. Typical value for turn­ON and turn-OFF thresholds are respectively V = 1.8V and V
th(OFF)
= 1.3V.
th(ON )
Pin EN (enable) may be used to implement Overc urrent and Thermal protection by connect ing it to t he open col­lector DIAG output If the protecti on and an exter nal dis­able function are both desired, the appropriate connection must be implemented. When the external signal is from an open col lect or output, the circui t in Fig­ure 5 can be used . For external circuits that are push pull outp uts t he circui t in Figur e 6 coul d be us ed. The re­sistor R 180K spectively 100K
should be chosen in the rang e from 2.2KΩ to
EN
. Recommended values for REN and CEN are re-
and 5.6nF. More information for se­lecting the values can be found in the Overcurrent Protection section.
Figure 4. Logi c Inp ut Int ernal Structu re
5V
Table 1. Charge Pump External Component Values.
C C R D D
BOOT P P 1 2
220nF 10nF 100 1N4148 1N4148
Figure 3. Char ge Pump Circu it
V
S
D1
D2
R
P
C
P
VCP VBOOT VS
C
BOOT
VS
B
D01IN1328
A
ESD
PROTECTION
D01IN1329
Figure 5. Pin EN Open Collector Driving
DIAG
5V
EN
EN
ESD
PROTECTION
OPEN
COLLECTOR
OUTPUT
5V
R
EN
C
Figure 6. Pin EN Push-Pull Driving
DIAG
5V
R
PUSH-PULL
OUTPUT
EN
C
EN
EN
ESD
PROTECTION
D02IN137
D02IN1379
8/25
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