The L6208Q is a DMOS fully integrated stepper
motor driver with non-dissipative overcurrent
protection, realized in BCDmultipower technology,
which combines isolated DMOS power transistors
with CMOS and bipolar circuits on the same chip.
The device includes all the circuitry needed to
drive a two-phase bipolar stepper motor including:
a dual DMOS full bridge, the constant OFF time
PWM current controller that performs the
chopping regulation, and the phase sequence
generator that generates the stepping sequence.
Available in QFN48 7x7 package, the L6208Q
features a non-dissipative overcurrent protection
on the high-side Power MOSFETs and thermal
shutdown.
Low level logic input current GND logic input voltage -10µA
High level logic input current 7 V logic input voltage 10µA
Turn-on input threshold 1.8 2.0V
Turn-off input threshold 0.81.3V
Input threshold hysteresis 0.250.5V
Switching characteristics
t
t
Enable to out turn ON delay time
D(on)EN
D(off)EN
t
RISE
t
FAL L
t
DCLK
Enable to out turn OFF delay time
Output rise time
Output fall time
Clock to output delay time
(2)
(2)
I
(2)
I
LOAD
(2)
I
LOAD
I
LOAD
LOAD
(3)
I
LOAD
=2.5 A, resistive load 100250400ns
=2.5 A, resistive load300550800ns
=2.5 A, resistive load 40250ns
=2.5 A, resistive load 40250ns
=2.5 A, resistive load 2µs
6/33Doc ID 018710 Rev 2
L6208QElectrical characteristics
Table 4.Electrical characteristics (continued)
SymbolParameterTest conditionMin. Typ. Max. Unit
t
CLK(min)L
t
CLK(min) H
t
t
t
t
RCLK(MIN )
Minimum clock time
Minimum clock time
f
CLK
S(MIN)
H(MIN)
R(MIN)
Clock frequency 100kHz
Minimum setup time
Minimum hold time
Minimum reset time
Minimum reset to clock delay time
t
Dead time protection 0.51µs
DT
Charge pump frequency Tj = -25 °C to 125 °C (7) 0.61MHz
f
CP
t
dt
f
CP
Dead time protection 0.51µs
Charge pump frequency -25 °C<Tj <125 °C 0.61MHz
PWM comparator and monostable
(4)
1µs
(4)
1µs
(5)
1µs
(5)
1µs
(5)
1µs
(5)
1µs
I
RCA
V
t
PROP
t
BLANK
t
ON(MIN)
t
I
, I
offset
OFF
BIAS
Source current at pins RCA and
RCB
RCB
Offset voltage on sense comparator V
Turn OFF propagation delay
Internal blanking time on SENSE
pins
(6)
V
RCA
REFA
= V
, V
= 2.5 V 3.55.5mA
RCB
= 0.5 V ±5 mV
REFB
500ns
1µs
Minimum ON time 1.52µs
R
PWM recirculation time
Input bias current at pins VREF
VREF
B
and
A
OFF
= 100 kΩ; C
R
OFF
= 20 kΩ; C
= 1 nF 13µs
OFF
= 1 nF 61µs
OFF
10µA
Overcurrent detection
I
sover
threshold
-25 °C<Tj <125 °C45.6 7.1A
Input supply overcurrent detection
ROPDR Open drain ON resistance I = 4 mA 4060Ω
t
OCD(ON)
t
OCD(OFF)
1. Tested at 25 °C in a restricted range and guaranteed by characterization.
2. See Figure 3.
3. See Figure 4.
4. See Figure 5.
5. See Figure 6.
6. Measured applying a voltage of 1 V to pin SENSE and a voltage drop from 2 V to 0 V to pin V
7. See Figure 7.
OCD turn-on delay time
OCD turn-off delay time
(7)
(7)
I = 4 mA; CEN < 100 pF 200ns
I = 4 mA; CEN < 100 pF 100ns
.
REF
Doc ID 018710 Rev 27/33
Electrical characteristicsL6208Q
Figure 3.Switching characteristic definition
EN
V
th(ON)
V
th(OFF)
t
I
OUT
90%
10%
D01IN1316
t
D(OFF)EN
t
FAL L
t
D(ON)EN
t
t
RISE
AM02557v1
Figure 4.Clock to output delay time
CLOCK
V
th(ON)
I
OUT
D01IN1317
Figure 5.Minimum timing definition; clock input
CLOCK
V
V
th(OFF)
th(ON)
t
CLK(MIN)L
V
th(OFF)
t
CLK(MIN)H
t
DCLK
t
t
D01IN1318
8/33Doc ID 018710 Rev 2
L6208QElectrical characteristics
Figure 6.Minimum timing definition; logic inputs
CLOCK
V
th(ON)
LOGIC INPUTS
t
S(MIN)
RESET
V
th(OFF)
V
th(ON)
t
R(MIN)
t
RCLK(MIN)
Figure 7.Overcurrent detection timing definition
I
OUT
I
SOVER
t
H(MIN)
D01IN1319
ON
BRIDGE
OFF
V
EN
90%
10%
t
OCD(ON)
t
OCD(OFF)
AM02558v1
Doc ID 018710 Rev 29/33
Circuit descriptionL6208Q
4 Circuit description
4.1 Power stages and charge pump
The L6208Q integrates two independent powerMOSFET full bridges, each powerMOSFET
has an R
conduction protection is implemented by using a dead time (t
internal timing circuit between the turn-off and turn-on of two power MOSFETs in one leg of
a bridge.
= 0.3 Ω (typical value @ 25 °C) with intrinsic fast freewheeling diode. Cross
DS(ON)
= 1 µs typical value) set by
DT
Pins VS
and VSB must be connected together to the supply voltage (VS).
A
Using an N-channel powerMOSFET for the upper transistors in the bridge requires a gate
drive voltage above the power supply voltage. The bootstrapped supply (V
) is obtained
BOOT
through an internal oscillator and a few external components to realize a charge pump
circuit, as shown in Figure 8. The oscillator output (pin VCP) is a square wave at 600 kHz
(typically) with 10 V amplitude. Recommended values/part numbers for the charge pump
circuit are shown in Tab le 5 .
Table 5.Charge pump external component values
ComponentValue
C
BOOT
C
P
R
P
220 nF
10 nF
100 Ω
D11N4148
D21N4148
Figure 8.Charge pump circuit
V
S
D1
R
C
VCPVBOOTVS
C
D2
P
P
BOOT
VS
A
B
AM02559v1
10/33Doc ID 018710 Rev 2
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