ST L6208 User Manual

DMOS DRIVER FOR BIPOLAR STEPPER MOTOR
OPERATING SUPPLY VOLTAGE FROM 8 TO 52V
5.6A OUTPUT PEAK CURRENT (2.8A RMS)
R
OPERATING FREQUENCY UP TO 100KHz
NON DISSIPATIVE OVERCURRENT
PROTECTION
DUAL INDEPENDENT CONSTANT t
CURRENT CONTROLLERS
FAST/SLOW DECAY MODE SELECTION
FAST DECAY QUASI-SYNCHRONOUS
RECTIFICATION
DECODING LOGIC FOR STEPPER MOTOR
FULL AND HALF STEP DRIVE
CROSS CONDUCTION PROTECTION
THERMAL SHUTDOWN
UNDER VOLTAGE LOCKOUT
INTEGRATED FAST FREE WHEELING DIODES
TYPICAL APPLICATIONS
BIPOLAR STEPPER MOTOR
DESCRIPTION
The L6208 is a DMOS Fully Integrated Stepper Motor Driver with non-dissipative Overcurrent Protection, realized in MultiPower-BCD technology, which com-
BLOCK DIAGRAM
0.3 TYP. VA LUE @ Tj = 25°C
DS(ON)
OFF
PWM
L6208
PowerDIP24
PowerSO36
(20+2+2)
ORDERING NUMBERS:
L6208N (PowerDIP24) L6208PD (PowerSO36) L6208D (SO24)
bines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip. The device in­cludes all the circuitry needed to drive a two-phase bipolar stepper motor including: a dual DMOS Full Bridge, the constan t off tim e PWM Current C ontroller that performs the chopping regulation and the Phase Sequence Generator, that generates the stepping sequence. Available in PowerDIP24 (20+2+2), PowerSO36 and SO24 (20+2+2) packages, the L6208 features a non-dissipative overcurrent protec­tion on the high side Power MOSFETs and thermal shutdown.
SO24
(20+2+2)
September 2003
VBOOT
VCP
CONTROL
HALF/FULL
CLOCK RESET
CW/CCW
V
BOOT
CHARGE
PUMP
THERMAL
EN
PROTECTION
STEPPING
SEQUENCE
GENERATION
VOLTAGE
REGULAT OR
5V10V
OCD
OCD
A
B
OVER
CURRENT
DETECTION
GATE
LOGIC
OVER
CURRENT
DETECTION
GATE
LOGIC
V
BOOT
10V 10V
ONE SHOT
MONOSTABLE
MASKING
PWM
TIME
V
BOOT
SENSE
COMPARATOR
BRIDGE A
BRIDGE B
+
-
D01IN1225
VS
A
OUT1 OUT2
SENSE
VREF
RC
A
VS
B
OUT1 OUT2 SENSE VREF RC
B
A A
A
A
B B
B
B
1/27
L6208
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Test conditions Value Unit
V
S
V
OD
V
BOOT
V
IN,VEN
V
REFA
V
REFB
V
RCA, VRCB
V
SENSEA,
V
SENSEB
I
S(peak)
I
S
, T
T
stg
Supply Voltage Differential Voltage between
VSA, OUT1A, OUT2A, SENSEA and VSB, OUT1B, OUT2B, SENSE
Bootstrap Peak Voltage
VSA =
VSB = V
VSA =
VSB = VS = 60V;
V
SENSEA
B
VSA =
VSB = V
= V
S
SENSEB
S
= GND
60 V 60 V
VS + 10 V
Input and Enable Voltage Range -0.3 to +7 V
,
Voltage Range at pins V and V
REFB
REFA
Voltage Range at pins RCA and RC
B
Voltage Range at pins SENSEA and SENSE
B
Pulsed Supply Current (for each
pin), internally limited by the
V
S
VSA = t
PULSE
VSB = VS;
< 1ms
-0.3 to +7 V
-0.3 to +7 V
-1 to +4 V
7.1 A
overcurrent protection RMS Supply Current (for each
pin)
V
S
Storage and Operating
OP
VSA =
VSB = V
S
2.8 A
-40 to 150 °C
Temperature Range
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Test Conditions MIN MAX Unit
V
V
OD
V
REFA
V
REFB
V
SENSEA,
V
SENSEB
I
OUT
T
f
sw
Supply Voltage
S
Differential Voltage Between VSA, OUT1A, OUT2A, SENSEA and VSB, OUT1B, OUT2B, SENSE
,
Voltage Range at pins V and V
REFB
Voltage Range at pins SENSEA and SENSE
B
REFA
VSA = VSA =
V
SENSEA
B
(pulsed tW < trr) (DC)
VSB = V VSB = VS;
= V
SENSEB
S
852V
-0.1 5 V
-6
-1 RMS Output Current 2.8 A Operating Junction Temperature -25 +125 °C
j
Switching Frequency 100 KHz
52 V
6 1
V V
2/27
L6208
THERMA L D ATA
Symbol Description PowerDIP24 SO24 PowerSO36 Unit
R
th-j-pins
R
th-j-case
R
th-j-amb1
R
th-j-amb1
R
th-j-amb1
R
th-j-amb2
(1) Mounted on a multi-layer FR4 PCB with a dissipati ng copper surface on the bottom side of 6cm2 (with a thickness of 35µm). (2) Mounted on a multi-layer FR4 PCB with a dissipati ng copper surface on the top side of 6cm2 (with a thic kness of 35µm ). (3) Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the top side of 6cm2 (with a thickness of 35µm), 16 via holes
and a groun d l ayer.
(4) Mounted on a multi-layer FR4 PCB without any hea t s i nking surfac e on the board.
Maximum Thermal Resistance Junction-Pins 18 14 - °C/W Maximum Thermal Resistance Junction-Case - - 1 °C/W
Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Ambient Maximum Thermal Resistance Junction-Ambient
(1)
(2)
(3)
(4)
43 51 - °C/W
--35°C/W
--15°C/W
58 77 62 °C/W
PIN CONNECTIONS (Top View)
RC
GND GND
RC
1 2 3
A
4
A
5
A
6 7 8
B
9
B
10
B
11
B
12
D99IN1083
CLOCK
CW/CCW
SENSE
OUT1
OUT1
SENSE
VREF
HALF/FULL
PowerDIP24/SO24
(5) The slug is internally connected to pins 1,18,19 and 36 (GND pins).
VREF
24 23 22 21 20
18 17 16 15 14 13
A
RESET VCP OUT2
A
VS
A
GND19 GND VS
B
OUT2
B
VBOOT EN CONTROL
GND
N.C. N.C.
VS
OUT2
N.C. N.C. VCP
RESET
VREF
CLOCK
CW/CCW
SENSE
RC N.C.
OUT1
N.C. N.C. N.C.
GND GND
1 2 3 4
A
5
A
6 7 8 9
A
10 27 11 12
A
13 24
A
14 15
A
16 17 18
D99IN1084
PowerSO36
36 35 34 33 32 31 30 29 28
26 25
23 22 21 20 19
(5)
GND N.C. N.C. VS
B
OUT2
B
VBOOT EN CONTROL HALF/FULL VREF
B
SENSE
B
RC
B
N.C. OUT1
B
N.C.
3/27
L6208
PIN DESCRIPTION
PACKAGE
SO24/
PowerDIP24
PowerSO36
Name Type Function
PIN # PIN #
1 10 CLOCK Logic Input Step Clock input. The state machine makes one step on
each rising edge.
2 11 CW/CCW Logic Input Selects the direction of the rotation. HIGH logic level sets
clockwise direction, whereas LOW logic level sets counterclockwise direction. If not used, it has to be connected to GND or +5V.
3 12 SENSE
Power Supply Bridge A Source Pin. This pin must be connected to Power
A
Ground through a sensing power resistor.
413RC
A
RC Pin RC Network Pin. A parallel RC network connected
between this pin and ground sets the Current Controller OFF-Time of the Bridge A.
5 15 OUT1
6, 7,
18, 19
1, 18,
19, 36
GND GND Ground terminals. In PowerDIP24 and SO24 packages,
Power Output Bridge A Output 1.
A
these pins are also used for heat dissipation toward the PCB. On PowerSO36 package the slug is connected to
these pins. 8 22 OUT1 924RC
Power Output Bridge B Output 1.
B
B
RC Pin RC Network Pin. A parallel RC network connected
between this pin and ground sets the Current Controller
OFF-Time of the Bridge B.
10 25 SENSE
Power Supply Bridge B Source Pin. This pin must be connected to Power
B
Ground through a sensing power resistor.
11 26 VREF
Analog Input Bridge B Current Controller Reference Voltage.
B
Do not leave this pin open or connected to GND.
12 27 HALF/FULL Logic Input Step Mode Selector. HIGH logic level sets HALF STEP
Mode, LOW logic level sets FULL STEP Mode.
If not used, it has to be connected to GND or +5V.
13 28 CONTROL Logic Input Decay Mode Selector. HIGH logic level sets SLOW DECAY
Mode. LOW logic level sets FAST DECAY Mode.
If not used, it has to be connected to GND or +5V.
(6)
14 29 EN
Logic Input
Chip Enable. LOW logic level switches OFF all Power
MOSFETs of both Bridge A and Bridge B. This pin is also
connected to the collector of the Overcurrent and Thermal
Protection to implement over current protection.
If not used, it has to be connected to +5V through a
resistor.
15 30 VBOOT Supply
Voltage 16 32 OUT2 17 33 VS
20 4 VS
Power Output Bridge B Output 2.
B
Power Supply Bridge B Power Supply Voltage. It must be connected to
B
Power Supply Bridge A Power Supply Voltage. It must be connected to
A
Bootstrap Voltage needed for driving the upper Power MOSFETs of both Bridge A and Bridge B.
the Supply Voltage together with pin VS
the Supply Voltage together with pin VS
A
B
4/27
L6208
PIN DESCRIPTION
(continued)
PACKAGE
SO24/
PowerDIP24
PowerSO36
Name Type Function
PIN # PIN #
21 5 OUT2
Power Output Bridge A Output 2.
A
22 7 VCP Output Charge Pump Oscillator Output. 23 8 RESET Logic Input Reset Pin. LOW logic level restores the
Home
State (State 1) on the Phase Sequence Generator State Machine. If not used, it has to be connected to +5V.
24 9 VREF
Analog Input Bridge A Current Controller Reference Voltage.
A
Do not leave this pin open or connected to GND.
(6) Also connected at the output drain of the Over current and Thermal protection MOSFET. Therefore, it has to be driven putting in series
a resistor with a value in the range of 2.2K - 180K, recommended 100KΩ.
ELECTRICAL CHARACTERISTICS
(T
= 25°C, Vs = 48V, unless otherwise specified)
amb
Symbol Parameter Test Conditions Min Typ Max Unit
V
Sth(ON)
V
Sth(OFF)
Turn-on Threshold 6.6 7 7.4 V Turn-off Threshold 5.6 6 6.4 V
I
Quiescent Supply Current All Bridges OFF;
S
T
j(OFF)
= -25°C to 125°C
T
j
Thermal Shutdown Temperature 165 °C
(7)
Output DMOS Transistors
R
DS(ON)
I
High-Side Switch ON Resistance Tj = 25 °C 0.34 0.4
T
=125 °C
j
Low-Side Switch ON Resistance T
Leakage Current EN = Low; OUT = V
DSS
= 25 °C 0.28 0.34
j
T
=125 °C
j
(7)
(7)
S
EN = Low; OUT = GND -0.15 mA
Source Drain Diodes
V
Forward ON Voltage ISD = 2.8A, EN = LOW 1.15 1.3 V
SD
t
Reverse Recovery Time If = 2.8A 300 ns
rr
Forward Recovery Time 200 ns
t
fr
Logic Inputs (EN, CONTROL, HALF/FULL, CLOCK, RESET, CW/CCW)
V
Low level logic input voltage -0.3 0.8 V
IL
510mA
0.53 0.59
0.47 0.53
2mA
V
High level logic input voltage 2 7 V
IH
5/27
L6208
ELECTRICAL CHARACTERISTICS (continued)
(T
= 25°C, Vs = 48V, unless otherwise specified)
amb
Symbol Parameter Test Conditions Min Typ Max Unit
I
Low Level Logic Input Current GND Logic Input Voltage -10 µA
IL
I
High Level Logic Input Current 7V Logic Input Voltage 10 µA
IH
V
th(ON)
V
th(OFF)
V
th(HYS)
Turn-on Input Threshold 1.8 2.0 V Turn-off Input Threshold 0.8 1.3 V Input Threshold Hysteresis 0.25 0.5 V
Switching Characteristics
t
D(ON)EN
t
D(OFF)EN
t
RISE
t
FALL
t
DCLK
t
CLK(min)L
t
CLK(min)
f
t
S(MIN)
t
H(MIN)
t
R(MIN)
Enable to Output Turn-on Delay
(8)
Time Enable to Output Turn-off Delay
(8)
Time Output Rise Time Output Fall Time Clock to Output Delay Time Minimum Clock Time Minimum Clock Time
H
Clock Frequency 100 KHz
CLK
Minimum Set-up Time Minimum Hold Time Minimum Reset Time
(8)
(8)
(10)
(10)
(11)
(11)
(11)
(9)
I
=2.8A, Resistive Load 100 250 400 ns
LOAD
I
=2.8A, Resistive Load 300 550 800 ns
LOAD
I
=2.8A, Resistive Load 40 250 ns
LOAD
I
=2.8A, Resistive Load 40 250 ns
LOAD
I
=2.8A, Resistive Load 2 µs
LOAD
s 1µs
s 1µs 1µs
t
RCLK(MIN
Minimum Reset to Clock Delay
)
t
DT
f
CP
(11)
Time Dead Time Protection 0.5 1 µs
Charge Pump Frequency
PWM Comparator and Monostable
I
RCA, IRCB
V
Source Current at pins RCA and RC
B
Offset Voltage on Sense
offset
Comparator
t
PROP
t
BLANK
Turn OFF Propagation Delay Internal Blanking Time on
SENSE pins
t
ON(MIN)
Minimum On Time 1.5 2 µs
6/27
s
Tj = -25°C to 125°C
V
= V
RCA
V
REFA, VREFB
(12)
RCB
(7)
0.6 1 MHz
= 2.5V 3.5 5.5 mA
= 0.5V ±5 mV
500 ns
s
L6208
ELECTRICAL CHARACTERISTICS (continued)
(T
= 25°C, Vs = 48V, unless otherwise specified)
amb
Symbol Parameter Test Conditions Min Typ Max Unit
t
I
BIAS
PWM Recirculation Time R
OFF
Input Bias Current at pins VREFA
OFF
R
OFF
= 20KΩ; C = 100KΩ; C
OFF
OFF
= 1nF
= 1nF
and VREFB
Over Current Protection
I
SOVER
R
OPDR
t
OCD(ON)
t
OCD(OFF)
(7) Tested at 25°C in a restricted range and guaranteed by characterization. (8) See Fig. 1. (9) See Fig. 2. (10) See Fig. 3. (11) See Fig. 4. (12) Measured applyin g a voltage of 1V to pi n SENSE and a voltage drop fr om 2V to 0V to pin VR EF. (13) See Fig. 5.
Input Supply Overcurrent Protection Threshold
= -25°C to 125°C
T
j
Open Drain ON Resistance I = 4mA 40 60 OCD Turn-on Delay Time (13) I = 4mA; CEN < 100pF 200 ns OCD Turn-off Delay Time (13) I = 4mA; CEN < 100pF 100 ns
(7)
4 5.6 7.1 A
Figure 1. Switching Characteristic Definition
EN
13 61
µs µs
10 µA
V
th(ON)
V
th(OFF)
I
OUT
90%
10%
D01IN1316
t
D(OFF)EN
t
FALL
t
D(ON)EN
t
RISE
t
t
7/27
L6208
Figure 2. Clock to Output Delay Time
CLOCK
I
OUT
V
th(ON)
t
D01IN1317
Figure 3. Minimum Timing Definition; Clock Input
CLOCK
V
V
th(OFF)
th(ON)
t
CLK(MIN)L
Figure 4. Minimum Timing Definition; Logic Inputs
CLOCK
LOGIC INPUTS
V
th(ON)
t
V
th(OFF)
t
CLK(MIN)H
t
DCLK
D01IN1318
8/27
RESET
V
th(OFF)
V
th(ON)
t
R(MIN)
t
S(MIN)
t
RCLK(MIN)
t
H(MIN)
D01IN1319
Figure 5. Ove rcurrent Detect i on Timi ng Definition
I
OUT
I
SOVER
ON
BRIDGE
OFF
V
EN
90%
10%
L6208
t
OCD(ON)
t
OCD(OFF)
D02IN1399
CIRCUIT DESCRIPTION
POWER STAGES and CHARGE PUMP
The L6208 integrates two independent Power MOS Full Bridges. Each Power MOS has an R
DS(ON)
= 0.3Ω (typ­ical value @ 25°C), with i ntrinsic fast freew heeling diode. Switchi ng patterns are generated by the PWM Current Controller and the Phase Sequence Generator (see below). Cross conduction protection is achieved using a dead time (t
= 1µs typical value) between the sw itch off and s witch on of tw o Power MOSFETSs in one leg of
DT
a bridge. Pins VS
voltage in the range from 8V to 52V. It has to be noticed that the R
and VSB MUST be connected together to the supply voltage VS. The device operates with a supply
A
increases of some percents when the
DS(ON)
supply voltage is in the range from 8V to 12V (see Fig. 34 and 35). Using N-Channel Power MOS for the upper transistors in the bridge requires a gate drive voltage above the
power supply vol tage. The bootstrapped supply voltage V
is obtained through an internal Oscillator and few
BOOT
external components to realize a charge pump circuit as shown in Figure 6. The oscillator output (VCP) is a square wave at 600KHz (typic al) with 10V amplitud e. Recommended va lues/part number s for the c harge pump circuit are shown in Table 1.
Table 1. Charge Pump External Components Values
C
BOOT
C
P
R
P
D1 1N4148 D2 1N4148
220nF 10nF 100
9/27
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