ST L6207Q User Manual

Features

■ Operating supply voltage from 8 to 52 V

■ 5.6 A output peak current

■ R

0.3 Ω typ. value @ TJ = 25 °C

DS(on)

■ Operating frequency up to 100 kHz

■ Non-dissipative overcurrent protection

■ Dual independent constant t

PWM current

OFF

controllers

■ Slow decay synchronous rectification

■ Cross conduction protection

■ Thermal shutdown

■ Undervoltage lockout

■ Integrated fast freewheeling diodes

Applications

■ Bipolar stepper motor

■ Dual or quad DC motor

Figure 1. Block diagram

L6207Q

DMOS dual full bridge driver

QFN-48

(7 x 7 mm)

Description

The L6207Q is a DMOS dual full bridge designed
for motor control applications, realized in
BCDmultipower technology, which combines
isolated DMOS power transistors with CMOS and
bipolar circuits on the same chip. The device also
includes two independent constant OFF time
PWM current controllers that perform the
chopping regulation. Available in QFN48 7x7
package, the L6207Q features thermal shutdown
and a non-dissipative overcurrent detection on the
high-side Power MOSFETs.

VBOOT

VCP

EN

IN1

IN2

EN

IN1

IN2

V

BOOT

CHARGE

PUMP

OCD

A

THERMAL

PROTECTION

A

A

A

VOLTAGE

REGULATOR

5V10V

OCD

B

B

B

B

OVER

CURRENT

DETECTION

GATE

LOGIC

OVER

CURRENT

DETECTION

GATE

LOGIC

V

ONE SHOT

MONOSTABLE

BOOT

PWM

MASKING

TIME

V

BOOT

SENSE

COMPARATOR

BRIDGE A

BRIDGE B

V01V01

+

-

VS

A

OUT1

OUT2

SENSE

VREF

RC

A

V

S

B

OUT1

OUT2

SENSE

VREF

RC

B

A

A

A

A

B

B

B

B

AM02555v1

November 2011 Doc ID 018993 Rev 2 1/28

www.st.com

28

Contents L6207Q

Contents

1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.2 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4 Circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.1 Power stages and charge pump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.2 Logic inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.3 PWM current control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.4 Slow decay mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

4.5 Non-dissipative overcurrent detection and protection . . . . . . . . . . . . . . . 15

4.6 Thermal protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

5 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

6 Output current capability and IC power dissipation . . . . . . . . . . . . . . 20

7 Thermal management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

8 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

10 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

2/28 Doc ID 018993 Rev 2

L6207Q Electrical data

1 Electrical data

1.1 Absolute maximum ratings

Table 1. Absolute maximum ratings

Symbol Parameter Parameter Value Unit

V

Supply voltage VSA = VSB = VS 60 V

S

Differential voltage between VS

V

OD

V

BOOT

V

IN,VEN

V

REFA

V

REFB

V

RCA,VRCB

V

SENSEA

V

SENSEB

Input and enable voltage range -0.3 to +7 V

,

,

, OUT2A, SENSEA and VSB,

OUT1

A

OUT1B, OUT2B, SENSE

B

Bootstrap peak voltage VSA = VSB = VS V

Voltage range at pins V

REFA

Voltage range at pins RCA and RC

Voltage range at pins SENSEA and
SENSE

B

Pulsed supply current (for each VS

I

S(peak)

pin), internally limited by the
overcurrent protection

IS RMS supply current (for each VS pin) VSA = VSB = VS 2.5 A

T

stg

, TOP

Storage and operating temperature
range

A

and V

,

VSA = VSB = VS = 60 V;
VSENSE

A

GND

REFB

B

= VSB = VS;

V

SA

t

< 1 ms

PULSE

= VSENSEB =

60 V

+ 10 V

S

-0.3 to +7 V

-0.3 to +7 V

-1 to +4 V

7.1 A

-40 to 150 °C

1.2 Recommended operating conditions

Table 2. Recommended operating conditions

Symbol Parameter Parameter Min. Max. Unit

V

Supply voltage VSA = VSB = VS 8 52 V

S

Differential voltage between VS

V

OD

V

V

,

SENSEA

SENSEB

I

RMS output current 2.5 A

OUT

T

j

f

sw

, OUT2A, SENSEA and VSB,

OUT1

A

, OUT2B, SENSEB

OUT1

B

Voltage range at pins SENSEA and
SENSEB

Operating junction temperature -25 +125 °C

Switching frequency 100 kHz

Doc ID 018993 Rev 2 3/28

,

A

= VSB = VS;

VS

A

V

SENSEA

Pulsed t

DC -1 1 V

= V

W

< t

SENSEB

rr

52 V

-6 6 V

Pin connection L6207Q

2 Pin connection

Figure 2. Pin connection (top view)

NC

OUT1A

OUT1A

NC

NC

GND

NC

NC

NC

OUT1B

OUT1B

NC

RCA

48 47 46 45 44 43 42 41 40 39 38 37

1

EPAD

2

3

4

5

6

7

8

9

10

11

12

13 14 15 16 17 18 19 20 21 22 23 24

RCB

SENSEANCIN2A

NC

SENSEB

SENSEA

SENSEB

IN1B

IN1A

IN2B

Note: The exposed PAD must be connected to GND pin.

Table 3. Pin description

VREFA

VREFB

ENA

VCPNCOUT2A

ENB

VBOOT

OUT2A

OUT2B

OUT2B

36

NC

35

VSA

34

VSA

33

NC

32

NC

31

GND

30

NC

29

NC

28

NC

27

VSB

26

VSB

25

NC

NC

AM02556v1

Pin Name Type Function

43 IN1A Logic input Bridge A logic input 1.

44 IN2A Logic input Bridge A logic input 2.

45, 46 SENSEA Power supply

48 RCA RC pin

Bridge A source pin. This pin must be connected to power ground
through a sensing power resistor.

RC network pin. A parallel RC network connected between this pin and
ground sets the current controller OFF time of bridge A.

2, 3 OUT1A Power output Bridge A output 1.

6, 31 GND GND

Signal ground terminals. These pins are also used for heat dissipation
toward the PCB.

10, 11 OUT1B Power output Bridge B output 1.

13 RCB RC pin

15, 16 SENSEB Power supply

RC network pin. A parallel RC network connected between this pin and
ground sets the current controller OFF time of bridge B.

Bridge B source pin. This pin must be connected to power ground
through a sensing power resistor.

17 IN1B Logic input Bridge B input 1

4/28 Doc ID 018993 Rev 2

L6207Q Pin connection

Table 3. Pin description (continued)

Pin Name Type Function

18 IN2B Logic input Bridge B input 2

19 VREFB Analog input

Bridge B current controller reference voltage. Do not leave this pin open
or connect to GND.

Bridge B enable. Low logic level switches off all power MOSFETs of
Bridge B. This pin is also connected to the collector of the overcurrent

20 ENB Logic input

(1)

and thermal protection transistor to implement overcurrent protection. If
not used, it must be connected to +5 V through a resistor.

21 VBOOT Supply voltage

Bootstrap voltage needed for driving the upper power MOSFETs of both
Bridge A and bridge B.

22, 23 OUT2B Power output Bridge B output 2.

26, 27 VSB Power supply

34, 35 VSA Power supply

Bridge B power supply voltage. It must be connected to the supply
voltage together with pin VSA.

Bridge A power supply voltage. It must be connected to the supply
voltage together with pin VSB.

38, 39 OUT2A Power output Bridge A output 2.

40 VCP Output Charge pump oscillator output.

Bridge A enable. Low logic level switches off all power MOSFETs of
bridge A. This pin is also connected to the collector of the overcurrent

(1)

41 ENA Logic input

and transistor to implement overcurrent protection. If not used, it must be
connected to +5 V through a resistor. Thermal protection

42 VREFA Analog input

1. Also connected at the output drain of the overcurrent and thermal protection MOSFET. Therefore, it must be driven putting

in series a resistor with a value in the range of 2.2 kΩ - 180 kΩ, recommended 100 kΩ.

Bridge A current controller reference voltage. Do not leave this pin open
or connect to GND.

Doc ID 018993 Rev 2 5/28

Electrical characteristics L6207Q

3 Electrical characteristics

VS = 48 V, TA = 25 °C, unless otherwise specified.

Table 4. Electrical characteristics

Symbol Parameter Test condition Min. Typ. Max. Unit

V

Sth(ON)

V

Sth(OFF)

Turn-on threshold 6.6 7 7.4 V

Turn-off threshold 5.6 6 6.4 V

IS Quiescent supply current

Thermal shutdown temperature 165 °C

T

j(OFF)

Output DMOS transistors

High-side switch ON resistance

R

DS(ON)

Low-side switch ON resistance

I

DSS

Leakage current

Source drain diodes

V

Forward ON voltage ISD = 2.5 A, EN = low 1.15 1.3 V

SD

t

rr

t

fr

Reverse recovery time If = 2.5 A 300 ns

Forward recovery time 200 ns

Logic input

All bridges OFF; Tj = -25 °C to
125 °C

(1)

510mA

Tj = 25 °C 0.34 0.4

Tj =125 °C

(1)

0.53 0.59

Ω

Tj = 25 °C 0.28 0.34

Tj =125 °C

EN = low; OUT = V

(1)

0.47 0.53

2mA

S

EN = low; OUT = GND -0.15 mA

V

V

I

I

V

th(ON)

V

th(OFF)

V

th(HYS)

IH

IL

IH

Low level logic input voltage -0.3 0.8 V

IL

High level logic input voltage 2 7 V

Low level logic input current GND logic input voltage -10 µA

High level logic input current 7 V logic input voltage 10 µA

Turn-on input threshold 1.8 2 V

Turn-off input threshold 0.8 1.3 V

Input threshold hysteresis 0.25 0.5 V

Switching characteristics

t

t

Enable to out turn ON delay time

D(on)EN

t

D(on)IN

t

RISE

D(off)EN

t

D(off)IN

Input to out turn ON delay time

Output rise time

Enable to out turn OFF delay time

Input to out turn OFF delay time I

(2)

(2)

I

LOAD

I

LOAD

time included)

I

LOAD

(2)

I

LOAD

LOAD

=2.5 A, resistive load 100 250 400 ns

=2.5 A, resistive load (dead

=2.5 A, resistive load 40 250 ns

=2.5 A, resistive load 300 550 800 ns

=2.5 A, resistive load 600 ns

6/28 Doc ID 018993 Rev 2

1.6 µs

L6207Q Electrical characteristics

Table 4. Electrical characteristics (continued)

Symbol Parameter Test condition Min. Typ. Max. Unit

t

Output fall time

FAL L

t

dt

f

CP

Dead time protection 0.5 1 µs

Charge pump frequency -25 °C<Tj <125 °C 0.6 1 MHz

PWM comparator and monostable

(2)

I

=2.5 A, resistive load 40 250 ns

LOAD

I

RCA

V

t

PROP

t

BLANK

t

ON(MIN)

t

I

BIAS

, I

offset

OFF

Source current at pins RCA and

RCB

RCB

Offset voltage on sense comparator V

Turn OFF propagation delay

Internal blanking time on SENSE
pins

(3)

V

RCA

REFA

= V

, V

= 2.5 V 3.5 5.5 mA

RCB

= 0.5 V ±5 mV

REFB

Minimum ON time 1.5 2 µs

R

PWM recirculation time

Input bias current at pins VREF
VREF

B

and

A

OFF

= 100 kΩ; C

R

OFF

= 20 kΩ; C

= 1 nF 13 µs

OFF

= 1 nF 61 µs

OFF

Over current detection

Input supply overcurrent detection

I

sover

R

OPDR

t

OCD(ON)

t

OCD(OFF)

1. Tested at 25 °C in a restricted range and guaranteed by characterization.

2. See Figure 3.

3. Measured applying a voltage of 1 V to pin SENSE and a voltage drop from 2 V to 0 V to pin V

4. See Figure 4.

threshold

Open drain ON resistance I = 4 mA 40 60 Ω

OCD turn-on delay time

OCD turn-off delay time

(4)

I = 4 mA; CEN < 100 pF 200 ns

(4)

-25 °C<Tj <125 °C 4 5.6 7.1 A

I = 4 mA; CEN < 100 pF 100 ns

REF

500 ns

1µs

10 µA

.

Doc ID 018993 Rev 2 7/28

Electrical characteristics L6207Q

Figure 3. Switching characteristic definition

EN

V

th(ON)

V

th(OFF)

t

I

OUT

90%

10%

D01IN1316

t

D(OFF)EN

t

FAL L

t

D(ON)EN

t

RISE

t

AM02557v1

Figure 4. Overcurrent detection timing definition

I

OUT

I

SOVER

ON

BRIDGE

OFF

V

EN

90%

10%

t

OCD(ON)

t

OCD(OFF)

AM02558v1

8/28 Doc ID 018993 Rev 2

L6207Q Circuit description

4 Circuit description

4.1 Power stages and charge pump

The L6207Q integrates two independent power MOSFET full bridges, each power MOSFET
has an R
conduction protection is implemented by using a dead time (t
internal timing circuit between the turn-off and turn-on of two power MOSFETs in one leg of
a bridge.

= 0.3 Ω (typical value @ 25 °C) with intrinsic fast freewheeling diode. Cross

DS(ON)

= 1 µs typical value) set by

DT

Pins VS

and VSB must be connected together to the supply voltage (VS).

A

Using an N-channel power MOSFET for the upper transistors in the bridge requires a gate
drive voltage above the power supply voltage. The bootstrapped supply (V

) is obtained

BOOT

through an internal oscillator and a few external components to realize a charge pump
circuit, as shown in Figure 5. The oscillator output (pin VCP) is a square wave at 600 kHz
(typically) with 10 V amplitude. Recommended values/part numbers for the charge pump
circuit are shown in Tab le 5 .

Table 5. Charge pump external component values

Component Value

C

BOOT

C

P

R

P

220 nF

10 nF

100 Ω

D1 1N4148

D2 1N4148

Figure 5. Charge pump circuit

V

S

D1

R

C

VCP VBOOT VS

C

D2

P

P

BOOT

VS

A

B

AM02559v1

Doc ID 018993 Rev 2 9/28