ST L6207 User Manual

L6207

DMOS DUAL FULL BRIDGE DRIVER WITH PWM CURRENT CONTROLLER

■OPERATING SUPPLY VOLTAGE FROM 8 TO 52V

■5.6A OUTPUT PEAK CURRENT (2.8A DC)

■RDS(ON) 0.3Ω TYP. VALUE @ Tj = 25 °C

■OPERATING FREQUENCY UP TO 100KHz

■NON DISSIPATIVE OVERCURRENT PROTECTION

■DUAL INDEPENDENT CONSTANT tOFF PWM CURRENT CONTROLLERS

■SLOW DECAY SYNCHRONOUS RECTIFICATION

■CROSS CONDUCTION PROTECTION

■THERMAL SHUTDOWN

■UNDER VOLTAGE LOCKOUT

■INTEGRATED FAST FREE WHEELING DIODES

TYPICAL APPLICATIONS

■BIPOLAR STEPPER MOTOR

■DUAL DC MOTOR

DESCRIPTION

The L6207 is a DMOS Dual Full Bridge designed for motor control applications, realized in MultiPower-

BLOCK DIAGRAM

PowerDIP24	PowerSO36	SO24
(20+2+2)		(20+2+2)

ORDERING NUMBERS:

L6207N (PowerDIP24)

L6207PD (PowerSO36)

L6207D (SO24)

BCD technology, which combines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip. The device also includes two independent constant off time PWM Current Controllers that performs the chopping regulation. Available in PowerDIP24 (20+2+2), PowerSO36 and SO24 (20+2+2) packages, the L6207 features a non-dissi- pative overcurrent protection on the high side Power MOSFETs and thermal shutdown.

VBOOT	VBOOT						VSA
			VBOOT		VBOOT
VCP	CHARGE
	PUMP
		OCDA	OVER
			CURRENT
			DETECTION				OUT1A
		THERMAL	10V		10V		OUT2A
		PROTECTION
ENA			GATE
IN1A			LOGIC
							SENSEA
IN2A
	VOLTAGE			PWM
	REGULATOR		ONE SHOT	MASKING		+
			MONOSTABLE	TIME	SENSE	-	VREFA
					COMPARATOR
	10V	5V					RCA
					BRIDGE A
			OVER				VSB
							OUT1B
		OCDB	CURRENT
			DETECTION				OUT2B
			GATE				SENSEB
ENB							VREFB
			LOGIC
							RCB
IN1B
IN2B					BRIDGE B
						D99IN1085A

September 2003

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L6207

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Test conditions	Value	Unit
VS	Supply Voltage	VSA = VSB = VS	60	V
VOD	Differential Voltage between	VSA = VSB = VS = 60V;	60	V
	VSA, OUT1A, OUT2A, SENSEA and	VSENSEA = VSENSEB = GND
	VSB, OUT1B, OUT2B, SENSEB
VBOOT	Bootstrap Peak Voltage	VSA = VSB = VS	VS + 10	V
VIN,VEN	Input and Enable Voltage Range		-0.3 to +7	V
VREFA,	Voltage Range at pins VREFA		-0.3 to +7	V
VREFB	and VREFB
VRCA, VRCB	Voltage Range at pins RCA and		-0.3 to +7	V
	RCB
VSENSEA,	Voltage Range at pins SENSEA		-1 to +4	V
VSENSEB	and SENSEB
IS(peak)	Pulsed Supply Current (for each	VSA = VSB = VS;	7.1	A
	VS pin), internally limited by the	tPULSE < 1ms
	overcurrent protection
IS	RMS Supply Current (for each	VSA = VSB = VS	2.8	A
	VS pin)
Tstg, TOP	Storage and Operating		-40 to 150	°C
	Temperature Range

RECOMMENDED OPERATING CONDITIONS

Symbol	Parameter	Test Conditions	MIN	MAX	Unit
VS	Supply Voltage	VSA = VSB = VS	8	52	V
VOD	Differential Voltage Between	VSA = VSB = VS;		52	V
	VSA, OUT1A, OUT2A, SENSEA and	VSENSEA = VSENSEB
	VSB, OUT1B, OUT2B, SENSEB
VREFA,	Voltage Range at pins VREFA		-0.1	5	V
VREFB	and VREFB
VSENSEA,	Voltage Range at pins SENSEA	(pulsed tW < trr)	-6	6	V
VSENSEB	and SENSEB	(DC)	-1	1	V
IOUT	RMS Output Current			2.8	A
Tj	Operating Junction Temperature		-25	+125	°C
fsw	Switching Frequency			100	KHz

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					L6207
THERMAL DATA
Symbol	Description	PowerDIP24	SO24	PowerSO36	Unit
Rth-j-pins	Maximum Thermal Resistance Junction-Pins	18	14	-	°C/W
Rth-j-case	Maximum Thermal Resistance Junction-Case	-	-	1	°C/W
Rth-j-amb1	Maximum Thermal Resistance Junction-Ambient 1	43	51	-	°C/W
Rth-j-amb1	Maximum Thermal Resistance Junction-Ambient 2	-	-	35	°C/W
Rth-j-amb1	Maximum Thermal Resistance Junction-Ambient 3	-	-	15	°C/W
Rth-j-amb2	Maximum Thermal Resistance Junction-Ambient 4	58	77	62	°C/W

(1)Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the bottom side of 6cm2 (with a thickness of 35µm).

(2)Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the top side of 6cm2 (with a thickness of 35µm).

(3)Mounted on a multi-layer FR4 PCB with a dissipating copper surface on the top side of 6cm2 (with a thickness of 35µm), 16 via holes and a ground layer.

(4)Mounted on a multi-layer FR4 PCB without any heat sinking surface on the board.

PIN CONNECTIONS (Top View)

						GND	1				36		GND
						N.C.	2		35				N.C.
						N.C.	3		34				N.C.
IN1A		1	24		VREFA	VSA	4		33				VSB
						OUT2A	5		32				OUT2B
IN2A		2	23		ENA
						N.C.	6		31				N.C.
SENSEA		3	22		VCP	VCP		7	30				VBOOT
RCA		4	21		OUT2A	ENA		8	29				ENB
OUT1A		5	20		VSA	VREFA		9	28				VREFB
								10	27
GND	6		19		GND	IN1A							IN2B
GND	7		18		GND	IN2A		11	26				IN1B
						SENSEA		12	25				SENSEB
OUT1B	8		17		VSB
						RCA		13	24				RCB
RCB	9		16		OUT2B
						N.C.		14	23				N.C.
SENSEB	10		15		VBOOT	OUT1A	15		22				OUT1B
IN1B	11		14		ENB	N.C.	16		21				N.C.
IN2B	12		13		VREFB	N.C.	17		20				N.C.
						GND		18			19		GND
			D02IN1346
										D02IN1347
	PowerDIP24/SO24								PowerSO36 (5)

(5)The slug is internally connected to pins 1,18,19 and 36 (GND pins).

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L6207

PIN DESCRIPTION

	PACKAGE
	SO24/	PowerSO36	Name	Type	Function
	PowerDIP24
	PIN #	PIN #
	1	10	IN1A	Logic input	Bridge A Logic Input 1.
	2	11	IN2A	Logic input	Bridge A Logic Input 2.
	3	12	SENSEA	Power Supply	Bridge A Source Pin. This pin must be connected to Power
					Ground through a sensing power resistor.
	4	13	RCA	RC Pin	RC Network Pin. A parallel RC network connected
					between this pin and ground sets the Current Controller
					OFF-Time of the Bridge A.
	5	15	OUT1A	Power Output	Bridge A Output 1.
	6, 7,	1, 18,	GND	GND	Signal Ground terminals. In Power DIP and SO packages,
	18, 19	19, 36			these pins are also used for heat dissipation toward the
					PCB.
	8	22	OUT1B	Power Output	Bridge B Output 1.
	9	24	RCB	RC Pin	RC Network Pin. A parallel RC network connected
					between this pin and ground sets the Current Controller
					OFF-Time of the Bridge B.
	10	25	SENSEB	Power Supply	Bridge B Source Pin. This pin must be connected to Power
					Ground through a sensing power resistor.
	11	26	IN1B	Logic Input	Bridge B Input 1
	12	27	IN2B	Logic Input	Bridge B Input 2
	13	28	VREFB	Analog Input	Bridge B Current Controller Reference Voltage.
					Do not leave this pin open or connect to GND.
	14	29	ENB	Logic Input (6)	Bridge B Enable. LOW logic level switches OFF all Power
					MOSFETs of Bridge B. This pin is also connected to the
					collector of the Overcurrent and Thermal Protection
					transistor to implement over current protection.
					If not used, it has to be connected to +5V through a
					resistor.
	15	30	VBOOT	Supply	Bootstrap Voltage needed for driving the upper Power
				Voltage	MOSFETs of both Bridge A and Bridge B.
	16	32	OUT2B	Power Output	Bridge B Output 2.
	17	33	VSB	Power Supply	Bridge B Power Supply Voltage. It must be connected to
					the supply voltage together with pin VSA.
	20	4	VSA	Power Supply	Bridge A Power Supply Voltage. It must be connected to
					the supply voltage together with pin VSB.
	21	5	OUT2A	Power Output	Bridge A Output 2.
	22	7	VCP	Output	Charge Pump Oscillator Output.

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				L6207
PIN DESCRIPTION (continued)
23	8	ENA	Logic Input (6)	Bridge A Enable. LOW logic level switches OFF all Power
				MOSFETs of Bridge A. This pin is also connected to the
				collector of the Overcurrent and Thermal Protection
				transistor to implement over current protection.
				If not used, it has to be connected to +5V through a
				resistor.
24	9	VREFA	Analog Input	Bridge A Current Controller Reference Voltage.
				Do not leave this pin open or connect to GND.

(6)Also connected at the output drain of the Over current and Thermal protection MOSFET. Therefore, it has to be driven putting in series a resistor with a value in the range of 2.2KΩ - 180KΩ, recommended 100KΩ.

ELECTRICAL CHARACTERISTICS

(Tamb = 25 °C, V s = 48V, unless otherwise specified)

Symbol		Parameter		Test Conditions	Min	Typ	Max	Unit
VSth(ON)		Turn-on Threshold			6.6	7	7.4	V
VSth(OFF)		Turn-off Threshold			5.6	6	6.4	V
IS		Quiescent Supply Current		All Bridges OFF;		5	10	mA
				Tj = -25°C to 125°C (7)
Tj(OFF)		Thermal Shutdown Temperature				165		°C
Output DMOS Transistors
RDS(ON)		High-Side Switch ON Resistance		Tj = 25 °C		0.34	0.4	Ω
				Tj =125 °C (7)		0.53	0.59	Ω
		Low-Side Switch ON Resistance		Tj = 25 °C		0.28	0.34	Ω
				Tj =125 °C (7)		0.47	0.53	Ω
IDSS		Leakage Current		EN = Low; OUT = VS			2	mA
				EN = Low; OUT = GND	-0.15			mA
Source Drain Diodes
VSD		Forward ON Voltage		ISD = 2.8A, EN = LOW		1.15	1.3	V
trr		Reverse Recovery Time		If = 2.8A		300		ns
tfr		Forward Recovery Time				200		ns
Logic Input
VIL		Low level logic input voltage			-0.3		0.8	V
VIH		High level logic input voltage			2		7	V
IIL		Low Level Logic Input Current		GND Logic Input Voltage	-10			µA
IIH		High Level Logic Input Current		7V Logic Input Voltage			10	µA
Vth(ON)		Turn-on Input Threshold				1.8	2.0	V
Vth(OFF)		Turn-off Input Threshold			0.8	1.3		V
Vth(HYS)		Input Threshold Hysteresis			0.25	0.5		V

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L6207

ELECTRICAL CHARACTERISTICS (continued) (Tamb = 25 °C, V s = 48V, unless otherwise specified)

Symbol	Parameter		Test Conditions	Min	Typ	Max	Unit
Switching Characteristics
tD(on)EN	Enable to out turn ON delay time (8)		ILOAD =2.8A, Resistive Load	100	250	400	ns
tD(on)IN	Input to out turn ON delay time		ILOAD =2.8A, Resistive Load		1.6		µs
			(dead time included)
tRISE	Output rise time(8)		ILOAD =2.8A, Resistive Load	40		250	ns
tD(off)EN	Enable to out turn OFF delay time (8)		ILOAD =2.8A, Resistive Load	300	550	800	ns
tD(off)IN	Input to out turn OFF delay time		ILOAD =2.8A, Resistive Load		600		ns
tFALL	Output Fall Time (8)		ILOAD =2.8A, Resistive Load	40		250	ns
tdt	Dead Time Protection			0.5	1		µs
fCP	Charge pump frequency		-25°C<T j <125°C		0.6	1	MHz
PWM Comparator and Monostable
IRCA, IRCB	Source Current at pins RCA and		VRCA = VRCB = 2.5V	3.5	5.5		mA
	RCB
Voffset	Offset Voltage on Sense		VREFA, VREFB = 0.5V		±5		mV
	Comparator
tPROP	Turn OFF Propagation Delay (9)				500		ns
tBLANK	Internal Blanking Time on				1		µs
	SENSE pins
tON(MIN)	Minimum On Time				1.5	2	µs
tOFF	PWM Recirculation Time		ROFF = 20KΩ; COFF = 1nF		13		µs
			ROFF = 100KΩ; COFF = 1nF		61		µs
IBIAS	Input Bias Current at pins VREFA					10	µA
	and VREFB
Over Current Protection
ISOVER	Input Supply Overcurrent		Tj = -25°C to 125°C (7)	4	5.6	7.1	A
	Protection Threshold
ROPDR	Open Drain ON Resistance		I = 4mA		40	60	Ω
tOCD(ON)	OCD Turn-on Delay Time (10)		I = 4mA; CEN < 100pF		200		ns
tOCD(OFF)	OCD Turn-off Delay Time (10)		I = 4mA; CEN < 100pF		100		ns

(7)Tested at 25°C in a restricted range and guaranteed by characterization.

(8)See Fig. 1.

(9)Measured applying a voltage of 1V to pin SENSE and a voltage drop from 2V to 0V to pin VREF.

(10)See Fig. 2.

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L6207

Figure 1. Switching Characteristic Definition

EN

Vth(ON)

Vth(OFF)

t

IOUT

90%

10%

t

D01IN1316

tFALL	tRISE
tD(OFF)EN	tD(ON)EN

Figure 2. Overcurrent Detection Timing Definition

IOUT

ISOVER

ON

BRIDGE

OFF

VEN
90%
10%
tOCD(ON)	D02IN1399
	tOCD(OFF)

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