ST L6206Q User Manual

Features

■ Operating supply voltage from 8 to 52 V

■ 5.6 A output peak current

■ R

0.3 Ω typ. value @ TJ = 25 °C

DS(on)

■ Operating frequency up to 100 kHz

■ Programmable high side overcurrent detection

and protection

■ Diagnostic output

■ Paralleled operation

■ Cross conduction protection

■ Thermal shutdown

■ Undervoltage lockout

■ Integrated fast free wheeling diodes

Application

■ Bipolar stepper motor

■ Dual or quad DC motor

Figure 1. Block diagram

L6206Q

DMOS dual full bridge driver

QFN-48

(7 x 7 mm)

Description

The L6206Q is a DMOS dual full bridge designed for motor control applications, developed using BCDmultipower technology, which combines isolated DMOS power transistors with CMOS and bipolar circuits on the same chip. Available in QFN48 7x7 package, the L6206Q features thermal shutdown and a non-dissipative overcurrent detection on the high side power MOSFETs plus a diagnostic output that can be easily used to implement the overcurrent protection.

VBOOT

VCP

PROGCL

OCD

EN

IN1

IN2

OCD

PROGCL

EN

IN1

IN2

A

B

V

BOOT

CHARGE

PUMP

VOLTAGE

REGULATOR

OCD

THERMAL

PROTECTION

OCD

10V

5V

VS

V

BOOT

OVER

A

B

CURRENT

DETECTION

GATE

LOGIC

OVER

CURRENT

DETECTION

GATE

LOGIC

V

BOOT

V01V01

BRIDGE A

BRIDGE B

A

OUT1

OUT2

SENSE

V

S

B

OUT1

OUT2

SENSE

A

B

AM02555v1

November 2011 Doc ID 022028 Rev 1 1/30

www.st.com

30

Contents L6206Q

Contents

1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.2 Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Pin connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4 Circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.1 Power stages and charge pump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.2 Logic inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.3 Non-dissipative overcurrent detection and protection . . . . . . . . . . . . . . . 11

4.4 Thermal protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

6 Paralleled operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

7 Output current capability and IC power dissipation . . . . . . . . . . . . . . 22

8 Thermal management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

9 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

11 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

2/30 Doc ID 022028 Rev 1

L6206Q Electrical data

1 Electrical data

1.1 Absolute maximum ratings

Table 1. Absolute maximum ratings

Symbol Parameter Parameter Value Unit

V

Supply voltage VSA = VSB = VS 60 V

S

V

OD

OCD

OCDB

Differential voltage between VSA, OUT1A, OUT2A, SENSEA and VSB,

, OUT2B, SENSE

OUT1

B

,

A

OCD pins voltage range -0.3 to +10 V

B

VSA = VSB = VS = 60V; VSENSEA = VSENSEB = GND

60 V

PROGCL

PROGCLB

V

SENSEA

V

SENSEB

I

S(peak)

,

A

PROGCL pins voltage range -0.3 to +7 V

BOOT

IN,VEN

Bootstrap peak voltage VSA = VSB = VS V

Input and enable voltage range -0.3 to +7 V

,

Voltage range at pins SENSEA and SENSE

Pulsed supply current (for each VS pin), internally limited by the overcurrent protection

B

= VSB = VS;

V

SA

t

PULSE

IS RMS supply current (for each VS pin) VSA = VSB = VS 2.5 A

T

, TOP

stg

Storage and operating temperature range

1.2 Recommended operating conditions

Table 2. Recommended operating conditions

Symbol Parameter Parameter Min. Max. Unit

Supply voltage VSA = VSB = VS 8 52 V

V

S

Differential voltage between VSA,

V

OUT1A, OUT2A, SENSEA and VSB,

OD

OUT1B, OUT2B, SENSEB

= VSB = VS;

VS

A

V

SENSEA

< 1ms

= V

SENSEB

+ 10 V

S

-1 to +4 V

7.1 A

-40 to 150 °C

52 V

,

V

SENSEA

V

SENSEB

I

OUT

T

f

sw

Voltage range at pins SENSEA and SENSEB

RMS output current 2.5 A

Operating junction temperature -25 +125 °C

j

Switching frequency 100 kHz

Pulsed t

DC -1 1 V

< t

W

rr

-6 6 V

Doc ID 022028 Rev 1 3/30

Pin connection L6206Q

2 Pin connection

Figure 2. Pin connection (top view)

OUT1A

GND

OUT1B

NC

SENSEA

OCDA

48 47 46 45 44 43 42 41 40 39 38 37

1

NC

EPAD

2

3

4

NC

5

NC

6

7

NC

8

NC

9

NC

10

11

12

NC

13 14 15 16 17 18 19 20 21 22 23 24

NC

OCDB

SENSEB

SENSEA

SENSEB

IN2A

IN1B

IN1A

IN2B

Note: The exposed PAD must be connected to GND pin.

Table 3. Pin description

ENA

PROGCLA

ENB

PROGCLB

VCPNCOUT2A

OUT2A

OUT2B

VBOOT

36

NC

35

VSA

34

VSA

33

NC

32

NC

31

GND

30

NC

29

NC

28

NC

27

VSB

26

VSB

25

NC

AM02556v1

Pin Name Type Function

43 IN1A Logic input Bridge A logic input 1.

44 IN2A Logic input Bridge A logic input 2.

45, 46 SENSEA Power supply

Bridge A source pin. This pin must be connected to power ground directly or through a sensing power resistor.

Bridge A overcurrent detection and thermal protection pin. An internal

48 OCDA Open-drain output

open-drain transistor pulls to GND when overcurrent on bridge A is detected or in case of thermal protection.

2, 3 OUT1A Power output Bridge A output 1.

6, 31 GND GND

Signal ground terminals. These pins are also used for heat dissipation toward the PCB.

10, 11 OUT1B Power output Bridge B output 1.

Bridge B overcurrent detection and thermal protection pin. An internal

13 OCDB Open-drain output

open-drain transistor pulls to GND when overcurrent on bridge B is detected or in case of thermal protection.

15, 16 SENSEB Power supply

Bridge B source pin. This pin must be connected to power ground directly or through a sensing power resistor.

4/30 Doc ID 022028 Rev 1

L6206Q Pin connection

Table 3. Pin description (continued)

Pin Name Type Function

17 IN1B Logic input Bridge B input 1

18 IN2B Logic input Bridge B input 2

Bridge B overcurrent level programming. A resistor connected between

19 PROGCLB R pin

20 ENB Logic input

21 VBOOT Supply voltage

22, 23 OUT2B Power output Bridge B output 2.

26, 27 VSB Power supply

this pin and ground sets the programmable current limiting value for bridge B. By connecting this pin to ground the maximum current is set. This pin cannot be left unconnected.

Bridge B enable. LOW logic level switches OFF all power MOSFETs of bridge B. If not used, it must be connected to +5 V.

Bootstrap voltage needed for driving the upper power MOSFETs of both bridge A and bridge B.

Bridge B power supply voltage. It must be connected to the supply voltage together with pin VSA.

34, 35 VSA Power supply

38, 39 OUT2A Power output Bridge A output 2.

40 VCP Output Charge pump oscillator output.

41 ENA Logic input

42 PROGCLA R pin

Bridge A power supply voltage. It must be connected to the supply voltage together with pin VSB.

Bridge A enable. LOW logic level switches OFF all power MOSFETs of bridge A. If not used, it must be connected to +5 V.

Bridge A overcurrent level programming. A resistor connected between this pin and ground sets the programmable current limiting value for bridge A. By connecting this pin to ground, the maximum current is set. This pin cannot be left unconnected.

Doc ID 022028 Rev 1 5/30

Electrical characteristics L6206Q

3 Electrical characteristics

VS = 48 V, TA = 25 °C, unless otherwise specified.

Table 4. Electrical characteristics

Symbol Parameter Test condition Min. Typ. Max. Unit

V

Sth(ON)

V

Sth(OFF)

IS Quiescent supply current

T

j(OFF)

Turn-on threshold 6.6 7 7.4 V

Turn-off threshold 5.6 6 6.4 V

All bridges OFF; Tj = -25 °C to 125 °C

(1)

510mA

Thermal shutdown temperature 165 °C

Output DMOS transistors

Tj = 25 °C 0.34 0.4

R

DS(ON)

I

DSS

High-side switch ON resistance

Tj =125 °C

Tj = 25 °C 0.28 0.34

Low-side switch ON resistance

Tj =125 °C

EN = Low; OUT = V

Leakage current

EN = Low; OUT = GND -0.15 mA

(1)

0.53 0.59

0.47 0.53

2mA

S

Source drain diodes

V

Forward ON voltage ISD = 2.5 A, EN = LOW 1.15 1.3 V

SD

t

rr

t

fr

Reverse recovery time If = 2.5 A 300 ns

Forward recovery time 200 ns

Logic input

Ω

V

I

V

th(ON)

V

th(OFF)

V

th(HYS)

IH

IL

IH

Low level logic input voltage -0.3 0.8 V

IL

High level logic input voltage 2 7 V

Low level logic input current GND logic input voltage -10 µA

High level logic input current 7 V logic input voltage 10 µA

Turn-on input threshold 1.8 2 V

Turn-off input threshold 0.8 1.3 V

Input threshold hysteresis 0.25 0.5 V

Switching characteristics

t

D(on)EN

t

D(on)IN

t

RISE

Enable pin to out, turn ON delay time

(2)

Input pin to out, turn ON delay time

Output rise time

(2)

=2.5 A, resistive load 100 250 400 ns

I

LOAD

=2.5 A, resistive load (dead

I

LOAD

time included)

I

=2.5 A, resistive load 40 250 ns

LOAD

6/30 Doc ID 022028 Rev 1

1.6 µs

L6206Q Electrical characteristics

Table 4. Electrical characteristics (continued)

Symbol Parameter Test condition Min. Typ. Max. Unit

t

D(off)EN

t

D(off)IN

t

FAL L

t

dt

f

CP

Enable pin to out, turn OFF delay

(2)

time

Input pin to out, turn OFF delay time I

Output fall time

(2)

I

=2.5 A, resistive load 300 550 800 ns

LOAD

=2.5 A, resistive load 600 ns

LOAD

=2.5 A, resistive load 40 250 ns

LOAD

Dead time protection 0.5 1 µs

Charge pump frequency -25 °C<Tj <125 °C 0.6 1 MHz

Overcurrent detection

I

s over

Input supply overcurrent detection threshold

-25 °C<Tj <125 °C; RCL= 39 kΩ

-25 °C<Tj <125 °C; RCL= 5 kΩ

-25 °C<Tj <125 °C; RCL= GND

0.57

4.42

5.6

ROPDR Open-drain ON resistance I = 4 mA 40 60 Ω

t

OCD(ON)

t

OCD(OFF)

1. Tested at 25 °C in a restricted range and guaranteed by characterization.

2. See Figure 3.

3. See Figure 4.

OCD turn-on delay time

OCD turn-off delay time

(3)

I = 4 mA; CEN < 100 pF 200 ns

(3)

I = 4 mA; CEN < 100 pF 100 ns

Figure 3. Switching characteristic definition

EN

A A A

V

th(OFF)

I

th(ON)

OUT

90%

10%

D01IN1316

t

D(OFF)EN

t

FAL L

t

D(ON)EN

t

RISE

t

AM02557v1

Doc ID 022028 Rev 1 7/30

Electrical characteristics L6206Q

Figure 4. Overcurrent detection timing definition

I

OUT

OCD

Threshold

t

V

OCD

90%

10%

t

OCD(ON)

t

OCD(OFF)

AM02558v1

8/30 Doc ID 022028 Rev 1

L6206Q Circuit description

4 Circuit description

4.1 Power stages and charge pump

The L6206Q integrates two independent Power MOS full bridges. Each power MOS has an R conduction protection is implemented by using a dead time (t an internal timing circuit between the turn-off and turn-on of two power MOSFETs in one leg of a bridge.

= 0.3 Ω (typical value @ 25 °C) with intrinsic fast freewheeling diode. Cross

DS(ON)

= 1 µs typical value) set by

DT

Pins VS

and VSB must be connected together to the supply voltage (VS).

A

Using an N-channel power MOSFET for the upper transistors in the bridge requires a gate drive voltage above the power supply voltage. The bootstrapped supply (V

) is obtained

BOOT

through an internal oscillator and few external components to realize a charge pump circuit, as shown in Figure 5. The oscillator output (pin VCP) is a square wave at 600 kHz (typically) with 10 V amplitude. Recommended values/part numbers for the charge pump circuit are shown in Ta bl e 5 .

Table 5. Charge pump external component values

Component Value

C

BOOT

C

P

R

P

220 nF

10 nF

100 Ω

D1 1N4148

D2 1N4148

Figure 5. Charge pump circuit

V

S

D1

R

C

VCP VBOOT VS

C

D2

P

BOOT

VS

A

B

AM02559v1

4.2 Logic inputs

Pins IN1A, IN2A, IN1B, IN2B, ENA, and ENB are TTL/CMOS and µC compatible logic inputs. The internal structure is shown in Figure 6. The typical values for turn-on and turn-off thresholds are respectively V

Pins EN connecting them respectively to the outputs OCD outputs. If this type of connection is chosen, particular care needs to be taken in driving these pins. Two configurations are shown in Figure 7 and Figure 8. If driven by an open- drain (collector) structure, a pull-up resistor R

and ENB are commonly used to implement overcurrent and thermal protection by

A

=1.8 V and V

thon

= 1.3 V.

thoff

and OCDB, which are open-drain

A

and a capacitor CEN are connected as

EN

Doc ID 022028 Rev 1 9/30

ST L6206Q User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

Figure 1. Block diagram

1 Electrical data

1.1 Absolute maximum ratings

Table 1. Absolute maximum ratings

1.2 Recommended operating conditions

Table 2. Recommended operating conditions

2 Pin connection

Figure 2. Pin connection (top view)

Table 3. Pin description

3 Electrical characteristics

Table 4. Electrical characteristics

Figure 3. Switching characteristic definition

Figure 4. Overcurrent detection timing definition

4 Circuit description

4.1 Power stages and charge pump

Table 5. Charge pump external component values

Figure 5. Charge pump circuit

4.2 Logic inputs