ST L272 Operation Manual
®
DUAL POWER OPERATIONAL AMPLIFIERS
.
OUTPUT CURRENT TO 1 A
.
OPERATES AT LOW VOLTAGES
.
SINGLE OR SPLIT SUPPLY
.
LARGE COMMON-MODE AND DIFFERENTIAL MODE RANGE
.
GROUND COMPATIBLE INPUTS
.
LOW SATURATION VOLTA GE
.
THERMAL SHUTDOWN
DESCRIPTION
The L272 is a monolithi c in te gr ated circuits in P owerdip, Min idip an d SO p ackage s intended for us e as
power opera t iona l am plif i ers in a w ide range of applicati ons including servo am plifiers and pow er supplies, com pac t s dis c , VC R, etc .
The high gain and hig h output power cap ability provide sup erior perfor mance w hatever an ope rati onal
amplifi er/p ower booster combination is requir ed.
L272
Powerdip
(8 + 8)
Minidip
ORDERING NUMBERS
L272M (Minidip)
L272D (SO16 Narrow)
SO16 (Narrow)
: L272 (Powerdip)
PIN CONNECTIONS (top view)
July 2003
L272M
L272D
1/10
L272
BLOCK DIAGRAMS
L272 L272ML272D
SCHEMATIC DIAGRAM (one only)
2/10
ABSOLUTE MAXIMUM RATIN GS
Symbol Parameter Value Unit
V
s
V
V
I
o
I
p
P
tot
T
op
, TjStorage and Junction Temperature – 40 to 150
T
stg
Supply Voltage 28 V
Input Voltage V
i
Differential Input Voltage
i
s
V
±
s
DC Output Current 1 A
Peak Output Current (non repetitive) 1.5 A
Power Dissipation at:
T
= 80°C (L272), T
amb
T
= 75 °C (L272)
case
= 50°C (L272M), T
amb
= 90 °C (L272D)
case
1.2
5
Operating Temperature Range (L272D) – 40 to 85
THERMAL DATA
Symbol Parameter Powerdip SO16 Minidip Unit
R
th j-case
R
th j-amb
R
th j-alumin a
* Thermal resistance junction-pin 4
** Thermal resistance junctions-pins with the chip soldered on the middle of an alumina supporting substrate measuring
15x 20mm; 0.65mm thickness and infinite heatsink.
Thermal Resistance Junction-pins Max. 15 – * 70
Thermal Resistance Junction-ambient Max. 70 – 100
Thermal Resistance Junction-alumina Max. – ** 50 –
L272
W
W
C
°
C
°
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (V
= 24V, T
S
= 25oC unless otherwise specified)
amb
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
s
I
s
I
b
V
os
I
os
Supply Voltage 4 28 V
V
Quiescent Drain Current VO =
S
Vs = 24V
2
Vs = 12V
8
7.51211mAmA
Input Bias Current 0.3 2.5
Input Offset Voltage 15 60 m V
Input Offset Current 50 250 nA
SR Slew Rate 1
B Gain-bandwidth Product 350 kHz
R
G
v
e
N
I
N
Input Resistance 500
i
O. L. Voltage Gain f = 100Hz
60 70
f = 1kHz
Input Noise Voltage B = 20kHz 10
Input Noise Current B = 20kHz 200 pA
50
CRR Common Mode Rejection f = 1kHz 60 75 dB
SVR Supply Voltage Rejection f = 100Hz, R
Vs = 24V
Vs = ± 12V
Vs = ± 6V
V
o
C
s
d Distortion
T
sd
Output Voltage Swing Ip = 0.1A
Ip = 0.5A 212322.5
Channel Separation f = 1 kHz; RL =10Ω, Gv = 30dB
Vs = 24V
= ± 6V
V
s
f = 1kHz, G
Thermal Shutdown Junction
Temperature
= 10kΩ, VR = 0.5V
G
= 3 dB, Vs = 24V, RL =
v
∞
547062
56
60
60
0.5 %
145
A
µ
V/µs
k
Ω
dB
dB
V
µ
dB
V
V
dB
C
°
3/10
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