ST EMIF02-SPK02F2 User Manual

2-line IPAD™, EMI filter and ESD protection
Features
Packaged in lead-free Flip Chip
High attenuation: -45 dB at 900 MHz
Very low PCB space consumption:
0.89 mm x 1.26 mm
Very thin package: 0.65 mm
High efficiency in ESD suppression
IEC6 1000-4-2 level 4
High reliability offered by monolithic integration
High reduction of parasitic elements through
integration and wafer level packaging
Complies with the following standards
EMIF02-SPK02F2
Datasheet production data
Flip-Chip package
(5 bumps)

Figure 1. Pin configuration (bump side)

1
2
3
O1
I1
A
IEC 61000-4-2 level 4:
– ±15 kV (air discharge) – ±8 kV (contact discharge)
Application
Mobile phones
Description
The EMIF02-SPK02F2 chip is a highly integrated device designed to suppress EMI/RFI noise for interface line filtering.
The EMIF02-SPK02F2 flip-chip packaging means the package size is equal to the die size. That's why the EMIF02-SPK02F2 is a very small device.
Additionally, this filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up 30 kV.
O2
GND
I2
B
C

Figure 2. Functional schematic

Input
Input
Output
Output
TM: IPAD is a trademark of STMicroelectronics
April 2012 Doc ID 15035 Rev 3 1/12
This is information on a product in full production.
www.st.com
12
Characteristics EMIF02-SPK02F2

1 Characteristics

Table 1. Absolute maximum ratings (T
Symbol Parameter Value Unit
ESD discharge IEC 61000-4-2
V
PP
Air discharge Contact discharge
I
SPK
T
T
j
stg
Maximum rms current per channel 350 mA
Junction temperature range -30 to 125 °C
Storage temperature range -55 to + 150 °C

Figure 3. Electrical characteristics - definitions

amb
= 25 °C)
30 30
kV
Symbol Parameter
V = Breakdown voltage
BR
V = Clamping voltage
CL
I = Leakage current @ V
RM RM
V = Stand-off voltage
RM
I = Forward current
F
I = Peak pulse current
PP
I = Breakdown current
R
V = Forward voltage drop
F
R
= Dynamic resistance
d
V
CL
T = Voltage temperatureα
Table 2. Electrical characteristics - values (T
Slope: 1/R
= 25 °C)
amb
I
PP
Slope: 1/R
d
I
PP
d
Symbol Test conditions Min Typ Max Unit
IR = 1 mA 6 V
VRM = 3 V 400 nA
0.35 0.8 Ω
VR = 0 V DC, 1 MHz 185 250 315 pF
Cut-off frequency: Z
SOURCE
= Z
= 50 Ω 20 MHz
LOAD
C
V
I
RM
R
LINE
F
BR
I/O
c
V
CL
2/12 Doc ID 15035 Rev 3
EMIF02-SPK02F2 Characteristics

Figure 4. Attenuation measurements versus frequency

S21 (dB)
0.00
-10.00
-20.00
-30.00
-40.00
F (Hz)
-50.00

Figure 5. Crosstalk measurements versus frequency

100.0k 1.0M 10.0M 100.0M 1.0G I1-O1 I2-O2
0.00
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
XTalk (dB)
F (Hz)
100.0k 1.0M 10.0M 100.0M 1.0G I1-O2
Doc ID 15035 Rev 3 3/12
Characteristics EMIF02-SPK02F2

Figure 6. ESD test conditions

2 x -20 dB
50 inputΩ
Figure 7. Clamping voltage V
versus peak pulse current IPP for short pulse duration such as
CL
ESD surges
IPP(A)
40
35
30
Typical breakdown dynamic resistance RD: 140 mΩ
tP= 100 ns
TJinitial = 25 °C
25
) A
(
20
P P
I
15
10
5
VCL(V)
0
0246810121416
V
(V)
CL
Note: For further information on the dynamic characteristic see the STMicroelectronics’
application note AN4022, “TVS short pulse R
measurement and correlation with TVS
d
clamping voltage during ESD”.
4/12 Doc ID 15035 Rev 3
EMIF02-SPK02F2 Characteristics

Figure 8. Output filter ESD response to IEC 61000-4-2 (+8 kV contact discharge) I1 to O1

V : ESD peak voltage
1
PP
V :clamping voltage @ 30 ns
2
CL
V :clamping voltage @ 60 ns
3
CL
4
V :clamping voltage @ 100 ns
CL
15.7 V
1
2
9.1 V
3
8.7 V
4
7.9 V

Figure 9. Output filter ESD response to IEC 61000-4-2 (-8 kV contact discharge) I1 to O1

1
16.1 V
2
-8.9 V
3
-8.7V
4
-7.9 V
V : ESD peak voltage
1
PP
V :clamping voltage @ 30 ns
2
CL
V :clamping voltage @ 60 ns
3
CL
4
V :clamping voltage @ 100 ns
CL
Doc ID 15035 Rev 3 5/12
Characteristics EMIF02-SPK02F2

Figure 10. Output filter ESD response to IEC 61000-4-2 (+15 kV contact discharge) I1 to O1

V : ESD peak voltage
1
PP
V :clamping voltage @ 30 ns
2
CL
V :clamping voltage @ 60 ns
3
CL
4
V :clamping voltage @ 100 ns
CL
25.5 V
1
2
9.7 V
10 V
3
4
8.3 V

Figure 11. Output filter ESD response to IEC 61000-4-2 (-15 kV contact discharge) I1 to O1

1
23.8 V
2
-10.2 V
3
-8.3V
4
-8.2 V
V : ESD peak voltage
1
PP
V :clamping voltage @ 30 ns
2
CL
V :clamping voltage @ 60 ns
3
CL
4
V :clamping voltage @ 100 ns
CL
6/12 Doc ID 15035 Rev 3
EMIF02-SPK02F2 Characteristics

Figure 12. Output filter ESD response to IEC 61000-4-2 (+30 kV contact discharge) I1 to O1

V : ESD peak voltage
1
PP
V :clamping voltage @ 30 ns
2
CL
V :clamping voltage @ 60 ns
3
CL
4
V :clamping voltage @ 100 ns
CL
37.1 V
1
2
11.8 V
3
10.8 V
4
8.8 V

Figure 13. Output filter ESD response to IEC 61000-4-2 (-30 kV contact discharge) I1 to O1

1
-37.9 V
2
-12.2 V
3
-11.3 V
4
-8.4 V
V : ESD peak voltage
1
PP
V :clamping voltage @ 30 ns
2
CL
V :clamping voltage @ 60 ns
3
CL
4
V :clamping voltage @ 100 ns
CL
Doc ID 15035 Rev 3 7/12
Ordering information scheme EMIF02-SPK02F2

2 Ordering information scheme

Figure 14. Ordering information scheme

EMIF yy - xxx zz Fx
EMI Filter
Number of lines
Information
x = resistance value (Ohms) z = capacitance value / 10(pF) or 3 letters = application 2 digits = version
Package
F = Flip Chip x = 2: lead-free, pitch = 500 µm, bump = 315 µm
8/12 Doc ID 15035 Rev 3
EMIF02-SPK02F2 Package information

3 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
.

Figure 15. Package dimensions

500 µm ± 10
250 µm ± 10
435 µm
500 µm ± 15
0.89 mm ± 50 µm
315 µm ± 50
1.26 mm ± 50 µm
650 µm ± 65

Figure 16. Footprint Figure 17. Marking

Dot, ST logo
Copper pad Diameter:
250 µm recommended, 300 µm max.
Solder stencil opening:
330 µm recommended
Solder mask opening recommendation:
340 µm min. for 315 µm copper pad diameter
xx = marking z = manufacturing location yww = datecode
(y = year
ww = week)
E
xyxwz
w
Doc ID 15035 Rev 3 9/12
Package information EMIF02-SPK02F2

Figure 18. Flip Chip tape and reel specification

Dot identifying Pin A1 location
8 ± 0.3
4 ± 0.1
E
E
ST
xxz
yww
ST
xxz
yww
Ø 1.5 ± 0.1
E
ST
xxz yww
1.75 ± 0.1 3.5 ± 0.1
0.73 ± 0.05
All dimensions in mm
User direction of unreeling
Note: More information is available in the application notes:
AN1235: “Flip Chip: Package description and recommendations for use”
AN1751: “EMI filters: Recommendations and measurements”
4 ± 0.1
10/12 Doc ID 15035 Rev 3
EMIF02-SPK02F2 Ordering information

4 Ordering information

Table 3. Ordering information

Order code Marking Package Weight Base qty Delivery mode
EMIF02-SPK02F2 JD Flip Chip 1.8 mg 5000 Tape and reel 7”

5 Revision history

Table 4. Document revision history

Date Revision Changes
17-Sep-2008 1 Initial release.
12-Sep-2011 2 Updated Figure 15 and Figure 16.
3-Apr-2012 3
Updated cover page features and description.Inserted Figure 6 to
Figure 13.
Doc ID 15035 Rev 3 11/12
EMIF02-SPK02F2
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12/12 Doc ID 15035 Rev 3
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