ST EMIF02-SPK02F2 User Manual
2-line IPAD™, EMI filter and ESD protection
Features
■ Packaged in lead-free Flip Chip
■ Very low resistance: 0.35 Ω
■ High attenuation: -45 dB at 900 MHz
■ Very low PCB space consumption:
0.89 mm x 1.26 mm
■ Very thin package: 0.65 mm
■ High efficiency in ESD suppression
IEC6 1000-4-2 level 4
■ High reliability offered by monolithic integration
■ High reduction of parasitic elements through
integration and wafer level packaging
Complies with the following standards
EMIF02-SPK02F2
Datasheet − production data
Flip-Chip package
(5 bumps)
Figure 1. Pin configuration (bump side)
1
2
3
O1
I1
A
■ IEC 61000-4-2 level 4:
– ±15 kV (air discharge)
– ±8 kV (contact discharge)
Application
■ Mobile phones
Description
The EMIF02-SPK02F2 chip is a highly integrated
device designed to suppress EMI/RFI noise for
interface line filtering.
The EMIF02-SPK02F2 flip-chip packaging means
the package size is equal to the die size. That's
why the EMIF02-SPK02F2 is a very small device.
Additionally, this filter includes ESD protection
circuitry, which prevents damage to the protected
device when subjected to ESD surges up 30 kV.
O2
GND
I2
B
C
Figure 2. Functional schematic
Input
Input
Output
Output
TM: IPAD is a trademark of STMicroelectronics
April 2012 Doc ID 15035 Rev 3 1/12
This is information on a product in full production.
www.st.com
12
Characteristics EMIF02-SPK02F2
1 Characteristics
Table 1. Absolute maximum ratings (T
Symbol Parameter Value Unit
ESD discharge IEC 61000-4-2
V
PP
Air discharge
Contact discharge
I
SPK
T
T
j
stg
Maximum rms current per channel 350 mA
Junction temperature range -30 to 125 °C
Storage temperature range -55 to + 150 °C
Figure 3. Electrical characteristics - definitions
amb
= 25 °C)
30
30
kV
Symbol Parameter
V = Breakdown voltage
BR
V = Clamping voltage
CL
I = Leakage current @ V
RM RM
V = Stand-off voltage
RM
I = Forward current
F
I = Peak pulse current
PP
I = Breakdown current
R
V = Forward voltage drop
F
R
= Dynamic resistance
d
V
CL
T = Voltage temperatureα
Table 2. Electrical characteristics - values (T
Slope: 1/R
= 25 °C)
amb
I
PP
Slope: 1/R
d
I
PP
d
Symbol Test conditions Min Typ Max Unit
IR = 1 mA 6 V
VRM = 3 V 400 nA
0.35 0.8 Ω
VR = 0 V DC, 1 MHz 185 250 315 pF
Cut-off frequency: Z
SOURCE
= Z
= 50 Ω 20 MHz
LOAD
C
V
I
RM
R
LINE
F
BR
I/O
c
V
CL
2/12 Doc ID 15035 Rev 3
EMIF02-SPK02F2 Characteristics
Figure 4. Attenuation measurements versus frequency
S21 (dB)
0.00
-10.00
-20.00
-30.00
-40.00
F (Hz)
-50.00
Figure 5. Crosstalk measurements versus frequency
100.0k 1.0M 10.0M 100.0M 1.0G
I1-O1 I2-O2
0.00
-10.00
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-80.00
XTalk (dB)
F (Hz)
100.0k 1.0M 10.0M 100.0M 1.0G
I1-O2
Doc ID 15035 Rev 3 3/12
Characteristics EMIF02-SPK02F2
Figure 6. ESD test conditions
2 x -20 dB
50 inputΩ
Figure 7. Clamping voltage V
versus peak pulse current IPP for short pulse duration such as
CL
ESD surges
IPP(A)
40
35
30
Typical breakdown dynamic resistance RD: 140 mΩ
tP= 100 ns
TJinitial = 25 °C
25
)
A
(
20
P
P
I
15
10
5
VCL(V)
0
0246810121416
V
(V)
CL
Note: For further information on the dynamic characteristic see the STMicroelectronics’
application note AN4022, “TVS short pulse R
measurement and correlation with TVS
d
clamping voltage during ESD”.
4/12 Doc ID 15035 Rev 3
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