Datasheet EMG8, UMG8N Datasheet (ROHM)

Page 1
Datasheet
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
EMG8 / UMG8N
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
l
l
Features
l
Inner circuit
1) Built-In Biasing Resistors.
2) Two DTC143Z chips in one package.
3) Emitter(GND)-common type.
4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for
operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
l
Application
Inverter circuit, Interface circuit, Driver circuit
l
Packaging specifications
EMT5
UMT5
8
8,000G88
3,000
G8
UMG8N
UMT5
2021
TR
180
EMG8
EMT5
1616
T2R
180
Part No.
Package
Package
size
(mm)
Taping
code
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
Reel size
(mm)
Parameter
Tr1 and Tr2
V
CC
50V
I
C(MAX.)
100mA
R
1
4.7kW
R
2
47kW
EMG8
(SC-107BB)
UMG8N
SOT-353 (SC-88A)
(4)
OUT
IN
(3)
GND
(2)
(5)
OUT
IN
(1)
(2)
(1)
(3)
(4)
(5)
(5)
(1)
(2)
(4)
(3)
1/6
2012.06 - Rev.B
Page 2
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Data Sheet
EMG8 / UMG8N
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
MHz
Transition frequency
fT
*1
V
CE
= 10V, IE = -5mA,
f = 100MHz
-
250
-
kW
Resistance ratio
R2/R
1
-
81012
-
Input resistance
R
1
-
3.29
4.7
6.11
mA
DC current gain
G
I
VO = 5V, IO = 10mA
80--
-
Output current
I
O(off)
V
CC
= 50V, VI = 0V
--0.5
V
Input current
I
I
VI = 5V
--1.8
mA
Output voltage
V
O(on)
IO / II = 5mA / 0.25mA
-
0.1
0.3
V
V
I(on)
VO = 0.3V, IO = 5mA
1.3--
0.5
Input voltage
V
I(off)
V
CC
= 5V, IO = 100mA
-
-
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
T
j
150
°C
T
stg
-55 to +150
°C
I
C(MAX.)
*1
100
mA
150 (Total)
*3
mW
P
D
*2
V
IN
-5 to +30
V
I
O
100
mA
Parameter
Symbol
Values
Unit
V
CC
50
V
2/6
2012.06 - Rev.B
Page 3
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Data Sheet
EMG8 / UMG8N
lElectrical characteristic curves(Ta = 25°C)
Fig.1 Input voltage vs. output current (ON characteristics)
INPUT VOLTAGE : V
I(on)
[V]
OUTPUT CURRENT : IO [A]
Fig.2 Output current vs. input voltage (OFF characteristics)
OUTPUT CURRENT : I
O
[A]
INPUT VOLTAGE : V
I(off)
[V]
Fig.3 Output current vs. output voltage
OUTPUT CURRENT : I
O
[mA]
OUTPUT VOLTAGE : VO [V]
Fig.4 DC current gain vs. output current
DC CURRENT GAIN : G
I
OUTPUT CURRENT : IO [A]
0
20
40
60
80
100
0 5 10
250μA
0A
300μA
350μA
400μA
450μA
500μA
200μA
150μA
100μA
II=
Ta=25ºC
50μA
3/6
2012.06 - Rev.B
Page 4
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Data Sheet
EMG8 / UMG8N
lElectrical characteristic curves(Ta = 25°C)
Fig.5 Output voltage vs. output current
OUTPUT VOLTAGE : V
O(on)
[V]
OUTPUT CURRENT : IO [A]
4/6
2012.06 - Rev.B
Page 5
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Data Sheet
EMG8 / UMG8N
lDimensions (Unit : mm)
Dimension in mm/inches
EMT5
Patterm of terminal position areas
b
D
e
Lp
Lp
E
H
E
LL
x S A
A
c
A1
A
y
S
S
e1
b2
l1
e
MIN MAX MIN MAX
A1 0.00 0.10 0 0.004
A 0.45 0.55 0.018 0.022
b 0.17 0.27 0.007 0.011 c 0.08 0.18 0.003 0.007 D 1.50 1.70 0.059 0.067 E 1.10 1.30 0.043 0.051 e
HE 1.50 1.70 0.059 0.067
L 0.10 0.30 0.004 0.012
Lp - 0.35 - 0.014
x - 0.10 - 0.00 4
y - 0.10 - 0.004
MIN MAX MIN MAX e1 b2 - 0.37 - 0.015
l1 - 0.45 - 0.018
INCHES
0.50
0.02
DIM
MILIMETERS
MILIMETERS
INCHES
1.25
0.049
DIM
5/6
2012.06 - Rev.B
Page 6
www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMG8 / UMG8N
lDimensions (Unit : mm)
Dimension in mm/inches
UMT5
Patterm of terminal position areas
E
x S A
A
E
H
D
b
c
Q
A3
L1
Lp
y
S
A1
e1
b2
l1
A
S
e
e
MIN MAX MIN MAX
A 0.80 1.00 0.031 0.039 A1 0.00 0.10 0 0.004 A3
b 0.15 0.30 0.006 0.012
c 0.10 0.20 0.004 0.008
D 1.90 2.10 0.075 0.083
E 1.15 1.35 0.045 0.053
e
HE 2.00 2.20 0.079 0.087
L1 0.20 0.50 0.008 0.02
Lp 0.25 0.55 0.01 0.022
Q 0.10 0.30 0.004 0.012
x - 0.10 - 0.004
y - 0.10 - 0.004
MIN MAX MIN MAX
e1
b2 - 0.40 - 0.016
l1 - 0.65 - 0.026
0.25
0.01
DIM
MILIMETERS
INCHES
1.55
0.06
DIM
MILIMETERS
INCHES
0.65
0.03
6/6
2012.06 - Rev.B
Page 7
Notes
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Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information.
The Products specied in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).
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