ST EMIF02-AV01F3 User Manual

EMIF02-AV01F3

Dual audio and video line IPAD™, EMI filter and ESD protection

Features

■ High-density capacitor

■ EMI low-pass filter and ESD protection

■ High-efficiency in EMI filtering

■ Lead-free package

■ 400 µm pitch

■ Very small PCB footprint: 0.77 mm x 1.17 mm

■ Very thin package: 0.605 mm

■ High reliability offered by monolithic integration

■ Reduction of parasitic elements thanks to CSP

integration

Complies with the following standards

■ IEC 61000-4-2 level 4

– 15 kV (air discharge) – 8 kV (contact discharge)

■ IEC 61000-4-2 level 1 on internal pin (A1, C1)

– 2 kV (air discharge) – 2 kV (contact discharge)

on

external pin (A2, C2)

Figure 1. Pin configuration (bump side

view)

Figure 2. Schematic

Flip Chip

5 bumps

12

A

B

C

Application

■ Dual audio and video line interface protection

A1

R

and filtering in mobile phones

Description

The EMIF02-AV01F3 is a highly integrated array designed to suppress EMI / RFI noise and provide impedance matching for mobile phones and portable applications.

The EMIF02-AV01F3 is in Flip-Chip package to offer space saving and high RF performance.

Additionally, this low-pass filter includes an ESD protection circuitry to prevent damage to the

2 kV

B2

Gnd

2 kV

C1

15 kV

R

application when subjected to ESD surges up to 15 kV.

TM: IPAD is a trademark of STMicroelectronics.

April 2010 Doc ID 12835 Rev 4 1/7

A2

C

C2

www.st.com

7

Characteristics EMIF02-AV01F3

1 Characteristics

Table 1. Absolute maximum ratings (T

Symbol Parameter Value Unit

Internal pins (A1, C1)

ESD discharge IEC 61000-4-2, air discharge

V

ESD discharge IEC 61000-4-2, contact discharge

pp

External pins (A2, C2)

ESD discharge IEC 61000-4-2, air discharge ESD discharge IEC 61000-4-2, contact discharge

Maximum junction temperature 125 °C

T

j

amb

= 25 °C)

2 2

kV

15

8

P

T

Total Power Dissipation 200 mW

TOT

Operating temperature range - 40 to + 85 °C

op

Storage temperature range - 55 to 150 °C

stg

Figure 3. Electrical characteristics (definitions)

I

Symbol Parameter

V = Breakdown voltage

BR

I = Leakage current @ V

RM RM

V = Stand-off voltage

RM

C = Line capacitance

line

Table 2. Electrical characteristics (values, T

amb

BR

= 25 °C)

Symbol Test conditions Min. Typ. Max. Unit

I

R

I

RM

VRMV

I

RM

I

V

R

V

BRVRM

V

BRIR

I

RM

R

I/O

C

line

= 1 mA 14 18 V

VRM = 3 V per line 0.5 µA

V

line

= 0 V, V

= 30 mV, F = 100 kHz 2.56 3.2 3.84 nF

osc

2/7 Doc ID 12835 Rev 4

12 15 18 Ω

EMIF02-AV01F3 Characteristics

Figure 4. Attenuation simulation with

Figure 5. Analog crosstalk

1 kΩ input and 10 kΩ ouput

-10.00

-20.00

-30.00

-40.00

-50.00

-60.00

-70.00

-80.00

-90.00

-100.00

dB

0.00

F (Hz)

1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G

Xtalk 1/2

db

0

-10

-20

-30

-40

-50

-60

-70

-80 10 100 1k 10k 100k 1M 10M 100M 1G

Input: 1 k

Output: 10 k

AC simulation

Ω

50Ω measurements

50Ω simulations

F (Hz)

Figure 6. Digital crosstalk Figure 7. ESD response to IEC 61000-4-2

(+15 kV air discharge) on one input (V

A1-A2 line

C1

C1-C2 line

C2

Vin = 1 V/Div

V

= 5 mV/Div

out

50 µs/Div

) and one output (V

IN

)

OUT

INPUT : 10 V/Div

100 ns/Div

OUTPUT : 10 V/Div

100 ns/Div

Figure 8. ESD response to IEC 61000-4-2

(-15 kV air discharge) on one input (V

) and one output (V

IN

)

OUT

INPUT : 10 V/Div

100 ns/Div

OUTPUT : 10 V/Div

100 ns/Div

50 µs/Div

Figure 9. Line capacitance versus applied

voltage

C

(nF)

LINE

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0123456

F=100 kHz

V

OSC

Tj=25 °C

=30 mV

V

LINE

RMS

(V)

Doc ID 12835 Rev 4 3/7