ST EMIF01-TV02F3 User Manual
Single line IPAD™, EMI filter and ESD protection
Features
■ user-customizable filtering solution
(recommended use of 2.2 µH external inductor)
■ 8 MHz bandwidth
■ provides very high attenuation at 27 MHz
■ ultralow stand-by power consumption
compared to active filters, ideal for portable
applications
■ accurate 75 Ω ± 5% impedance matching
■ high efficiency in ESD protection
(IEC standards)
■ high reliability offered by monolithic integration
Complies with the following standards
EMIF01-TV02F3
Flip-Chip package
(4 bumps)
Figure 1. Pin configuration (bump side)
GND
GND
GND
GND
■ IEC 61000-4-2 level 4 on internal and external
pins:
– ±15 kV (air discharge)
– ±8 kV (contact discharge)
Application
Portable applications with analog TV output
Description
The EMIF01-TV02F3 chip is a highly integrated
device designed to suppress EMI and RFI noise
in all systems with a TV analog output signal
subjected to electromagnetic interferences.
This filter includes ESD protection circuitry, which
prevents damage to the protected device when
subjected to ESD surges up 15 kV.
The EMIF01-TV02F3 provides high anti-aliasing
filtering performances to reject frequencies above
8 MHz, with high attenuation at 27 MHz when an
external inductor of 2.2 µH is connected between
pins B2 and B1.
IN OUT
IN OUT
Figure 2. Configuration
ESD ±2 kV
IEC 61000-4-2
Level 1
IN
B2
C1
C1
C1
R1
R1
R1
R1
75Ω
75?
75
O
C1 C2
330pF
330pF
330pF
A2
ESD ±15 kV
IEC 61000-4-2
Level 4
B1
C2
C2
C2
330pF
330pF
330pF
A1
TM: IPAD is a trademark of STMicroelectronics.
October 2010 Doc ID 15320 Rev 3 1/7
www.st.com
7
Characteristics EMIF01-TV02F3
1 Characteristics
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
Internal pins (B1) and external pin (B2):
V
PP
ESD discharge IEC 61000-4-2, air discharge
ESD discharge IEC 61000-4-2, contact discharge
T
Maximum junction temperature 150 °C
j
Operating temperature range -40 to +85 °C
T
op
15
15
kV
T
Figure 3. Electrical characteristics (definitions, T
Storage temperature range -55 to 150 °C
stg
= 25 °C)
amb
I
I
F
Symbol Parameter
V = Breakdown voltage
BR
I = Leakage current @ V
RM RM
V = Stand-off voltage
RM
V = Clamping voltage
CL
I = Peak pulse current
PP
Table 2. Electrical characteristics (values, T
V
CLVBRVRM
Slope: 1/R
= 25 °C)
amb
d
V
F
I
RM
I
PP
V
Symbol Test conditions Min. Typ. Max. Unit
V
BRIR
I
RM
= 1 mA 6.1 7.9 V
VR = 1 mA, between bumps B1 and A1 200 nA
R1 Tolerance ± 5 % 75 Ω
V
C1, C2
= 0 V, V
line
(measured under zero light conditions)
= 30 mV, F = 1 MHz
osc
Tolerance: ± 20%
2/7 Doc ID 15320 Rev 3
330 pF
EMIF01-TV02F3 Characteristics
Figure 4. S21 attenuation measurement
S21 (dB)
0.00
0.00
dB
10.00
10.00
20.00
20.00
30.00
30.00
40.00
40.00
50.00
50.00
60.00
60.00
(typical value) in 75/75 environment
APLAC 8.21 User: F:Cust# 8463:ST Microelectronics- Tours:Applied Wave Research
L=2.2µH (TDKRef:MLF1608A2R2J)
L=2.2µH (TDKRef:MLF1608A2R2J)
Input-Output
100.0k 1.0M 10.0M 100.0M 1.0G
100.0k 1.0M 10.0M 100.0M 1.0G
F (Hz)
Figure 5. ESD response to IEC 61000-4-2
(+15 kV air discharge) on one input
V
and on one output V
(in)
IN
C2
OUT
C3
Figure 6. ESD response to IEC 61000-4-2 (-15 kV air discharge) on one input V
output V
(out)
C2
IN
5.00 V/div
(out)
50 ns/div
and on one
(in)
5.00 V/div
5.00 V/div
C3
OUT
5.00 V/div
50 ns/div
Doc ID 15320 Rev 3 3/7
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