ST EMIF01-1003M3 User Manual
EMIF01-1003M3
1 line IPAD™, EMI filter and ESD protection in Micro QFN package
Features
■ Single line EMI symmetrical (I/O) low-pass filter
■ High efficiency in EMI filtering
■ Very low PCB space consumption:
– 1.0 mm x 0.6 mm
■ Very thin package: 0.6 mm max
■ High efficiency in ESD suppression
(IEC 61000-4-2 level 4)
■ High reliability offered by monolithic integration
■ High reduction of parasitic elements through
integration and wafer level packaging
■ Lead free package
■ Easy layout and flexibility due to single line
topology
■ Low capacitance
(JEDEC MO-236AA compliant)
Figure 1. Pin configuration (top view)
SOT-883
IN OUT
Complies with following standards
■ IEC 61000-4-2 level 4 input and output pins:
– 15 kV (air discharge)
– 8 kV (contact discharge)
■ MIL STD 883G - Method 3015-7 Class 3B (all
pins)
Applications
Where EMI filtering in ESD sensitive equipment is
required:
■ Keyboard for mobile phones
■ Computers and printers
■ Communication systems
■ MCU boards
GND
Figure 2. Basic cell configuration
Input
R = 100
C = 30 pF typ. @ 0 V
LINE
Ω
Output
Description
The EMIF01-1003M3 is a 1 line highly integrated
device designed to suppress EMI/RFI noise in all
systems exposed to electromagnetic interference.
This filter includes ESD protection circuitry, which
prevents damage to the application when
subjected to ESD surges up to 15 kV on all pins.
TM: IPAD is a trademark of STMicroelectronics
November 2010 Doc ID 13976 Rev 2 1/11
www.st.com
11
Characteristics EMIF01-1003M3
1 Characteristics
Table 1. Absolute ratings (limiting values at T
= 25° C unless otherwise specified)
amb
Symbol Parameter Value Unit
V
T
ESD discharge IEC 61000-4-2 air discharge on input and output pins
PP
ESD discharge IEC 61000-4-2 contact discharge on input and output pins
Junction temperature 125 °C
T
j
Operating temperature range -40 to + 85 °C
T
op
Storage temperature range -55 to +150 °C
stg
15
8
Figure 3. Electrical characteristics (definitions)
I
Symbol Parameter
V = Breakdown voltage
BR
I = Leakage current @ V
RM RM
V = Stand-off voltage
RM
V = Clamping voltage
CL
R=
D
I = Peak pulse current
PP
I = Breakdown current
R
C = Line capacitance
line
F
= Cut-off frequency
O
Dynamic resistance
V
V
CL
BR
I
F
V
F
V
RM
I
RM
I
R
I
PP
V
kV
Table 2. Electrical characteristics (T
amb
= 25° C)
Symbol Test conditions Min. Typ. Max. Unit
V
BRIR
I
RM
R
I/O
C
line
= 1 mA 5 6.5 8 V
VRM = 3 V per line 100 nA
Tolerance ± 10% 100 Ω
VR= 0 VDC, V
= 30 mV, F = 1 MHz 30 39 pF
OSC
S21 F = 900 MHz -25 dB
2/11 Doc ID 13976 Rev 2
EMIF01-1003M3 Characteristics
Figure 4. S21 attenuation measurement
(V
= 0 V)
bias
dB
0.00
-5.00
-10.00
-15.00
-20.00
-25.00
F (Hz)
-30.00
100.0k 1.0M 10.0M 100.0M 1.0G
I-O
Figure 6. ESD response to IEC 61000-4-2
(+15 kV air discharge)
INPUT
Figure 5. Line capacitance versus reverse
voltage applied (typical value)
C
(pF)
3.50E+01
3.00E+01
2.50E+01
2.00E+01
1.50E+01
1.00E+01
5.00E+00
0.00E+00
LINE
VR(V)
012345
Figure 7. ESD response to IEC 61000-4-2
(- 15 kV air discharge)
INPUT
OUTPUT
OUTPUT
Doc ID 13976 Rev 2 3/11
Application schematic EMIF01-1003M3
2 Application schematic
Figure 8. Application schematic
Keypad protection
Key_Row_1
Key_Row_2
Key_Col_y
IN OUT
GND
IN OUT
GND
IN OUT
GND
4/11 Doc ID 13976 Rev 2
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