This application note describes the functions of VN808/VN340SP high-side drivers in industrial
applications. The VN340SP and VN808 are monolithic devices based on VIPower technology. With
primary application requirements being safety and reliability , this application note co v ers the v arious tests
used to ensure compliance with international electromagnetic compatibility (EMC) specifications as well
as other requirements.
VN808/VN340SP high-side drivers are teste d mounted on their respecti ve ref eren ce design board (RDB).
Note:Additional information concerning the L5970D DC/DC converter, based on BCD technology, is
included in Section Appendix C: L5970D DC/DC converter on page 46.
Figure 1.VN808 and VN340SP reference design boards
The VN808 (Figure 2) is a high-side driver (HSD) us ed to driv e eight ind epend ent l oads . Act ive
current limitation combined with thermal shutdown and automatic restart functions protect the
device against ov erload. A thermal case substrat e protection is implemented to prot ect the FRx
substrate under short circuit and worst case ambient conditions in terms of reliability. The
device automatically turns off when the ground pin is disconnected. The VN340SP and VN808
are especially suitable for use with programmable logic controllers (PLC) in industrial
applications.
The VN340SP (Figure 3) is used to drive four independent resistive, capacitive and inductive
loads in high-side configurations. Active current limitation prevents the system power supply
from dropping in the event of a short load. A built-in thermal shutdown circuit protects the chip
from high temperatures and short circuits. Each I/O is pulled down when an over-temperature
condition of the relative channel is detected and restarts after reaching the lower thermal
threshold. The system oscillates depending on the thermal impedance of the application.
Table 1.VN808 and VN340SP main characteristics
VN340SP HSDVN808 HSD
Output current per channel 0.5A at 24V
Built-in current limiter
Short-load and overtemperature (Junction)
protection
Under-voltage shutdown
Open-drain diagnostic output Status output current 2 to 4 mA
DC supply voltage 36V DC supply voltage 45V
V e ry low stand-by current
Short-load and overtemperature (Junction and
Case) protection
This is a practical example how the VN808 high-side driver (HSD) can be used in applications
for an industrial environment.
Figure 4.VN808 reference design board
2.1 Circuit description
In order to protect the high-side driver (HSD) from the harsh industrial conditions of power
supply lines, usually optocouplers and Transil diodes are used to separate the ap plic at ion
control circuits from the power supply. Figure 11 shows a complete schematic diagram of the
VN808 reference design board.
The VN808 reference design board uses multi-channel TLP281-4 and TLP181 optocouplers.
The TLP281-4 and TLP181 are small and thin couplers, suitable for surfa ce-mounted
assemblies that consist of a photo transistor optically coupled to a gallium-arsenide infrared
emitting diode. The isolation voltage for this type of optocoupler is 2500 V
The clamping function of Transil diodes protect the HSD against transient overvoltages. The
reference design board is assembled with uni-directional SM15TXXA Transil diodes because
they protect the HSD against both positi ve and negative surge pulses. For more information
about SM15TXXA Transil diodes from STMicroelectronics, please refer to the SM15T36A
Datasheet av ailable at www.st.com.
Refer to Section A.2: Recommended VN808 PCB Layout on page 43 for more information
about designing boards to improve EMC immunity and performance in industrial environments.
2.2 Surge suppression
When designing your application, VCC and ground lines should lay on top of ea ch other,
minimizing the closed loop area and increasing the ability of the application to reject
RMS
.
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2 VN808 reference design boardAN2208
environmental noise. Figure 5 shows a surge suppression block using a un i-directional
SM15T36A Transil diode.
The Transil diode provides overvoltage protection for the HSD. The SM15T36A has a peak
pulse power dissipation of 1500 W, stand-off voltage of 36 V and breakdown voltage of 37.8 V.
Depending on the application, a Transil diode with a different v a lue (for example, betw een 2 8 V
and 40 V) may be used.
An electrolytic capacitor (C1) must be placed immedi a tely afte r th e sur g e sup p re ssio n block.
The size of the electrolytic capacitor is selected based on the slope of the output current, the
impedance of the complex power supply cables, as well as the maximum allowed voltage drop
across the device . The C1 v a lue is ge ner ally 25 µF per chip. For more inf ormation about th e C1
value, please refer to Application Note AN1351: VIPower and BCDMultipower: Making life easier with ST's high-side drivers.
A low ESR SMD capacitor (C2) must be placed as close as possib le to the HSD in order to f ilter
the power supply line for electromagnetic compatibility concerns. The suggested C2 value is
100 nF.
Figure 5.Surge Suppression Block
24V DC Input
C14
4.7 nF
GND_EARTHGND_POWER
C13
4.7 nF
2.3 Isolation recommendations
Industrial environments require good isolation between digital and power supply parts.
Optocouplers are widely used and multi-channel optocouplers represent a very attractive
solution. Figure 6 shows a schematic diagram with optocouplers connected to ground.
Although optocouplers are good isolators, they may lower the category of the Electrical Fast
Transients (EFT) immunity tests as the primary and secondary sides of the optocouplers may
still have parasitic capacitance “bonding” to each other, even though they are isolated. This
parasitic capacitance may inject a current through the base emitter junction of the
phototransistor when one half of the optocoupler is “tight” due to fast voltage transients with
respect to the other side as shown in Figure 7.
C1
22 µF
50V
VCC 24V
+
C2
100 nF
GND_POWER
D1
SM15T36A
Ai11615
If an optocoupler is used in an emitter-follower configuration, as in most industrial applications,
a high emitter voltage sig nal ma y b e induced b y applying EFTs e ven after opening the collector
termination. An efficient way to prevent this high emitter voltage signal is to provide a
conducting plane connected to gro und on both the top and bo ttom la y ers of th e PCB (under the
optocouplers) as shown in Figure 52: VN808 RDB PCB layout (top and bottom).
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AN22082 VN808 reference design board
Figure 6.Typical input/status isolation by optocouplers
Figure 7.Burst pulse affecting one input
2.4 Heatsink recommendations
Depending on ambient thermal conditions, HSD’s with a PowerSO10/SO36 package require
external cooling as the copper bott om p lat e of t he PSO-Package, u sed to maint ain t he ju nctio n
temperature during inductive switching, acts as a thermal capacitor.
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The VN808 reference board is designed with an onboard heatsink capability (minimum heat
sink area is 6 cm²). The recommended layout for Power SO packages is shown in Fig ure 8.
Figure 8.Recommended layout for High Power Dissipation capability
2.5 Schematic diagrams
Figure 9.DC/DC part of the application circuit
Figure 10. Current and voltage conventions
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AN22082 VN808 reference design board
Figure 11. Complete application circuit with VN808 and L5970D devices
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2 VN808 reference design boardAN2208
Figure 12. Switching part of the application circuit
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AN22083 VN340SP reference design board
3 VN340SP reference design board
This is a practical example how the VN340SP high-side driver (HSD) can be used in
applications for an industrial environment.
Figure 13. VN340SP reference design board
3.1 Circuit description
The application described below is very similar to that of the VN808 reference design board;
only the type of HSD and the optocoupler inter-co nn e ctio n is different. Figure 15 shows a
complete schematic diagram of the VN340SP reference design board. The optocouplers and
Transil diodes are the same as those used in the VN808 reference design board.
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3 VN340SP reference design boardAN2208
3.2 Schematic diagrams
Figure 14. Switching part of the application circuit
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