The 74V2T384 is an advanced high-speed CMOS
DUAL HIGH SPEED BUS SWITCH fabricated in
silicon gate C
2
MOS technology. It’s designed to
operate from 4.5V to 5.5V, m aking this device
ideal for portable applications. It’s offers 7Ω
Resistance typical value at V
key feature are fast switching speed (t
=4.5V. Additional
CC
=3.8ns,
ON
SOT23-8L
ORDER CODES
PACKAGET & R
SOT23-8L74V2T384STR
t
=3.3nsTypical)andLowPower
OFF
Consumption.
TheOE
switch is ON when the OE
OFF when OE
input is provided to control the s w itch; the
input is held low and
is held high.
It’s available in the c ommercial and extended
temperature range in SOT23-8L pa ckage.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Supply Voltage
CC
DC Input Voltage-0.5 to VCC+ 0.5
I
DC Control Input Voltage
IC
DC Output Voltage-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Control Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to +7.0V
V
-0.5 to +7.0V
V
± 20mA
-20mA
± 20mA
± 50mA
± 50mA
-65 to +150°C
300°C
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
V
T
dt/dv
1) VINfrom0.8V to 2Von control pin
Supply Voltage
CC
Input Voltage0 to V
I
Control Input Voltage
IC
Output Voltage0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) V
CC
= 5.0V
4.0 to 5.5V
CC
0 to 5.5V
CC
-55 to 125°C
0 to 20ns/V
2/7
V
V
DC SPECIFICATIONS
SymbolParameter
V
V
R
R
I
∆I
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Input
IH
Voltage
Low Level Input
V
IL
Voltage
ON Resistance
ON
ON Resistance
ON
Input/Output
OFF
Leakage Current
(SWITCH OFF)
Control Input
I
IN
Leakage Current
Quiescent Supply
I
CC
Current
Increase Quiescent
CC
Supply Current per
Control Input
74V2T384
Test ConditionValue
= 25°C
T
V
(V)
5.0
5.0
CC
(*)
(*)
A
Min.Typ. Max.Min.Max. Min. Max.
222V
4.0222V
4.00.80.80.8V
4.5
4.5
VIC=V
V
I/O
I
≤ 30mA
I/O
VIC=V
V
I/O
I
≤ 10mA
I/O
IL
=GND
IL
= 2.4V
71015V
204060V
5.5VOS=VCCto GND
V
IS=VCC
0to
VIC= 5.5V or GND
5.5
V
5.5
I=VCC
V
other V
5.5
V
IC=VIH
IC=VCC
IC=VCC
to GND
or GND
-2.1V
or
GND
-40 to 85°C -55 to 125°C
0.80.80.8V
±0.1± 1± 10µA
± 0.1± 1.0± 1.0µA
11020µA
1.352.53.5mA
Unit
AC ELECTRICAL CHARACTERISTICS (C
Test ConditionValue
SymbolParameter
t
t
PLZ
t
PHZ
t
PZL
t
PZH
(*) Voltage range is5.0V ± 0.5V
PD
Delay Time
Output Disable
Time
Output Enable
Time
V
(V)
5.0
5.0
5.0
CC
(*)
(*)
(*)
tr=tr=6ns
RL=500Ω
VIN= 2.4V
RL=1KΩ
VIN= 2.4V
= 50pF, Input tr=tf= 3ns)
L
= 25°C
T
A
Min.Typ. Max.Min.Max. Min. Max.
0.50.81.01.5ns
3.86.59.010.0ns
3.35.07.58.5ns
-40 to 85°C -55 to 125°C
Unit
3/7
74V2T384
CAPACITIVE CH ARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
T
A
Min.Typ. Max.Min.Max. Min. Max.
C
C
C
Input Capacitance
IN
Output
I/O
Capacitance
Power Dissipation
PD
Capacitance
4101010pF
7pF
3pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating currentcanbeobtained by the following equation. I
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