The 74V2T241 is an advanced high-speed CMOS
DUAL BUS BUFFER NON INVERTER fabricated
with sub-micron silicon gate and double-layer
metal wiring C
2
MOS technology.
It has one active-high and one active-low output
enable. Power down protection is provided o n all
SOT23-8L
ORDER CODES
PACKAGET & R
SOT23-8L74V2T241STR
inputs and outputs and 0 to 7V can be accepted
on inputs with no reg ard to the supply voltage.
This de vice can be used to interface 5V t o 3V
systems and it is idea l for portable applications
like personal digital assistant, camcorder and all
battery-powered equipment.
All inputsand outputs areequipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
1) V
CC
2) Highor Low State
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (see note 1)
O
DC Output Voltage (see note 2)-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
=0V or nG=VCC(Output in High Impedance state)
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
V
− 20mA
− 20mA
± 25mA
± 50mA
-65 to +150°C
260°C
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
V
T
dt/dv
1) VCC=0V or Output in High Impedance state
2) Highor Low State
3) VINfrom0.8 to 2.0V
2/8
Supply Voltage
CC
Input Voltage
I
Output Voltage (see note 1)
O
Output Voltage (see note 2)0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 3)(V
= 5.0 ± 0.5V)
CC
4.5 to 5.5V
0 to 5.5V
0 to 5.5V
CC
-55 to 125°C
0 to 20ns/V
V
Page 3
DC SPECIFICATIONS
SymbolParameter
V
V
V
I
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
High Impedance
I
OZ
Output Leakage
Current
Input Leakage
I
I
Current
Power downOutput
OPD
Leakage Current
Quiescent Supply
I
CC
Current
Test ConditionValue
= 25°C
T
V
CC
(V)
4.5to
5.5
A
Min.Typ. Max. Min. Max.Min. Max.
0.80.80.8V
4.5to
5.5
4.5
4.5
4.5
4.5
5.5
0to
5.5
0
5.5
IO=-50 µA
=-8 mA
I
O
IO=50 µA
=8 mA
I
O
I=VIH
or V
IL
V
VO= 5.5 or GND
V
= 5.5V or GND
I
= 5.5
V
O
V
I=VCC
or GND
4.44.54.44.4
3.943.83.7
0.00.10.10.1V
±0.25± 2.5± 2.5µA
74V2T241
-40 to 85°C -55 to 125°C
2.02.02.0V
0.360.440.44
± 0.1± 1± 1µA
0.5510µA
11010µA
Unit
V
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
Test ConditionValue
= 25°C
SymbolParameter
t
t
t
t
t
t
(**) Voltage range is 5.0V ± 0.5V
Propagation Delay
PLH
Time
PHL
Output Disable
PLZ
Time
PHZ
Output Enable
PZL
Time
PZH
V
5.0
5.0
5.0
5.0
5.0
5.0
C
CC
(V)
L
(pF)
(**)
153.85.51.06.51.07.5
(**)
504.36.51.07.51.08.5
(**)
(**)
(**)
(**)
15
50
15
50
R
L
R
L
R
L
R
L
=1KΩ
=1KΩ
=1KΩ
=1KΩ
T
A
-40 to 85°C -55 to 125°C
Min.Typ. Max. Min. Max.Min. Max.
3.65.01.06.01.07.0
5.17.01.08.01.09.0
3.75.91.07.01.08.0
4.16.51.07.51.08.5
Unit
ns
ns
ns
CAPACITIVE CHARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
T
A
Min.Typ. Max. Min. Max.Min. Max.
C
C
C
Input Capacitance
IN
Output
OUT
Capacitance
Power Dissipation
PD
Capacitance
4101010pF
6pF
14pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
-40 to 85°C -55 to 125°C
/2
Unit
3/8
Page 4
74V2T241
TEST CIRCUIT TEST CIRCUIT
TESTSWITCH
t
PLH,tPHL
t
PZL,tPLZ
t
PZH,tPHZ
CL=15/50pF or equivalent (includes jig and probe capacitance)
R1 = 1KΩ or equivalent
R
T=ZOUT
of pulse generator (typically 50Ω)
Open
V
CC
GND
WAVEFORM 1 : PROPAGATION DE L AYS (f=1MHz; 50% duty cycle)
4/8
Page 5
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use o f suc h inf ormat ion n or f or an y infr ingeme nt of paten ts or oth er ri gh ts of third part ies whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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