The 74V2T132 is an advanced high-speed CMOS
SINGLE 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
Pin configuration and function are the s ame as
those of the 74V2T00 but the 74 V2T132 has
hysteresis.
SOT23-8L
ORDER CODES
PACKAGET & R
SOT23-8L74V2T132STR
The internal circuit is composed o f 3 st ages
including buffer output, w hich provide high noise
immunity and stable output.
Power down protection is provide d on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
usedto interface 5V to 3V.
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) V
CC
2) Highor Low State
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (see note 1)
O
DC Output Voltage (see note 2)-0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
=0V
V
CC
Positive Supply Voltage
-0.5 to +7.0V
-0.5 to +7.0V
-0.5 to +7.0V
-20mA
± 20mA
± 25mA
± 50mA
-65 to +150°C
300°C
V
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
V
V
V
T
1) VCC=0V
2) Highor Low State
2/7
Supply Voltage
CC
Input Voltage
I
Output Voltage (see note 1)
O
Output Voltage (see note 2)0 to V
O
Operating Temperature
op
4.5 to 5.5V
0 to 5.5V
0 to 5.5V
CC
-55 to 125°C
V
DC SPECIFICATIONS
SymbolParameter
V
High Level
t+
Threshold Voltage
V
Low Level
t-
Threshold Voltage
V
Hysteresis Voltage4.50.41.40.41.40.41.4
h
V
V
+
I
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
Quiescent Supply
I
CC
Current
I
Additional Worst
CC
Case Supply
Current
Output Leakage
OPD
Current
74V2T132
Test ConditionValue
= 25°C
T
V
CC
(V)
A
Min.Typ. Max.Min.Max. Min. Max.
4.50.92.00.92.00.92.0
5.51.12.01.12.01.12.0
4.50.51.50.51.50.51.5
5.50.61.60.61.60.61.6
5.50.51.60.51.60.51.6
4.5
4.5
4.5
4.5
0to
5.5
5.5
IO=-50 µA
=-8 mA
I
O
IO=50 µA
=8 mA
I
O
VI= 5.5V or GND
V
I=VCC
or GND
4.44.54.44.4
3.943.83.7
0.00.10.10.1
One Input at 3.4V,
other input at V
5.5
CC
or GND
=5.5V
0
V
OUT
-40 to 85°C -55 to 125°C
0.360.440.55
± 0.1± 1.0± 1.0µA
11020µA
1.351.51.5mA
0.55.05.0µA
Unit
V
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
Test ConditionValue
SymbolParameter
t
t
(*) Voltage rangeis 5.0V ± 0.5V
Propagation Delay
PLH
Time
PHL
T
(*)
(V)
C
(pF)
L
V
CC
A
Min.Typ. Max.Min.Max. Min. Max.
5.0153.75.51.06.51.06.5
5.0505.27.51.08.51.08.5
-40 to 85°C -55 to 125°C
Unit
ns
= 25°C
CAPACITANCE CHARACTERISTICS
Test ConditionValue
= 25°C
SymbolParameter
T
A
Min.Typ. Max.Min.Max. Min. Max.
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
4101010pF
19pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
-40 to 85°C -55 to 125°C
/2
Unit
3/7
74V2T132
TEST CIRCUIT
CL= 50pF or equivalent (includes jig and probe capacitance)
R
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