■ HIGHSPEED:
=0.3ns(TYP.)atVCC=5V
t
PD
t
=0.4ns(TYP.)atVCC=3.3V
PD
■
LOW POWER DISSIPATION:
I
=1 µA (MAX.)at TA=25oC
CC
■ LOW”ON”RESISTANCE:
=10Ω(TYP.)AT VCC=5.0VI
R
ON
R
=12Ω(TYP.)AT VCC=3.3VI
ON
■ SINE WAVE DISTORTION
0.04%(TYP.)AT V
■ WIDEOPERATINGVOLTAGERANGE:
(OPR)= 2Vto 5V
V
CC
=3.3Vf=1KHz
CC
=100µA
I/O
=100µA
I/O
DESCRIPTION
The 74V2G66 is an high-speed CMOS DUAL
BILATERAL SWITCH fabricated in silicon gate
C2MOS technology. It achieves high speed
propagation delay and VERY LOW ON
resistances while maintaining true CMOS low
power consumption. This feature makes this part
ideal for battery-powered equipment. This
bilateral switch handles rail to rail analog and
digital signals that may vary across the full
74V2G66
DUAL BILATERAL SWITCH
PRELIMINARY DATA
SOT23-8L
ORDER CODES
PACKAGE TUBE T & R
SOT23-8L 74V2G66STR
power-supplyrange(from Vccto Ground).
The C input is provided to control the switch and
it’s compatible with standard CMOS output; the
switchis ONwhenthe C input is heldhigh and off
when C is held low. It can be used in many
application as Battery Powered System, Audio
Signal Routing, Communications System, Test
Equipment. It’s available in the commercial
temperaturerange in SOT23-8L.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 2000
1/8
74V2G66
LOGICDIAGRAM
PIN DESCRIPTION
PI N No SYMB OL NAME AND FU NCTIO N
1, 5 1 to 2 I/O Independent Input/Output
2, 6 1 to 2 O/I Independent Output/Input
3, 7 1C to 2C Enable Input (Active
HIGH)
4 GND Ground (0V)
8V
CC
Positive Supply Voltage
TRUTH TABLE
CONT ROL SW I TCH F UNC T I ON
HON
L OFF
ABSOLUTE MAXIMUM RATINGS
Symb o l Para met er Val u e Uni t
V
V
V
V
I
I
I
OK
I
or I
I
CC
T
T
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamage tothedevicemayoccur. Functionaloperationunderthesecondition isnot implied.
Supply Voltage -0.5 to +7 V
CC
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Control Input Voltage -0.5 to 7 V
IC
DC Output Voltage -0.5 to VCC+ 0.5 V
O
DC Input Diode Current
IK
DC Control Input Diode Current - 20 mA
IK
DC Output Diode Current
DC Output Current ± 50 mA
O
DC VCCor Ground Current ± 100 mA
GND
Storage Temperature -65 to +150
stg
Lead Temperature (10 sec) 300
L
20 mA
±
20 mA
±
o
C
o
C
RECOMMENDEDOPERATINGCONDITIONS
Symb o l Para met er Value Un it
V
V
V
V
T
dt/dv Input Rise and Fall Time (note 2) 0 to 10 ns/V
1) TruthTable guaranteed: 1.2V to 5.5V
2)V
from30%to70%V
IN
2/8
Supply Voltage (note 1) 2 to 5.5 V
CC
Input Voltage 0 to V
I
Control Input Voltage 0 to 5.5 V
IC
Output Voltage 0 to V
O
Operating Temperature: -40 to +85
op
CC
CC
CC
V
V
o
C
74V2G66
DC SPECIFICATIONS
Symb o l Parameter Test C o n di ti o ns Val u e Uni t
T
=25oC - 40 t o 85oC
A
CC
0.3V
0.7V
CC
14 26 30
12 17 20
12 18 24
10 14 18
2
0.1
±
±0.1 ±1.0 µA
CC
0.3V
±
CC
1.0
µA
µ
High Level Control Input
V
IH
Voltage
V
Low Level Control Input
IL
Voltage
R
∆R
ON Resistance 3.3
ON
Difference of ON
ON
Resistance Between
Switches
Input/Output Leakage
I
OFF
Current (SWITCH OFF)
I
Switch Input Leakage
IZ
Current (SWITCH ON,
OUTPUT OPEN)
Control Input Leakage
I
IN
Current
Quiescent Supply Current 5.5 VIC=VCCor GND 1 10
I
CC
(*) Voltagerangeis 5V ±0.5V
(**) Voltagerangeis3.3V± 0.3V
V
CC
(V)
Min. Typ. Max. Min. Max.
2.0 1.5 1.5
2.7 to
0.7V
5.5
2.0 0.5 0.5
2.7 to
5.5
(**)
(*)
5.0
(**)
3.3
(*)
5.0
3.0
to 5.5
VIC=V
V
I/O=VCC
I
I/O
VIC=V
V
I/O=VCC
I
I/O
V
V
I/O=VCC
I
I/O
to GND
1mA
≤
or GND
1mA
≤
IC=VIH
to GND
1mA
≤
IH
IH
5.5 VOS=VCCto GND
V
IC=VIL
to GND
V
IS=VCC
5.5 VOS=VCCto GND
V
IC=VIH
0to
VIC= 5.5V or GND ±0.1 ±1.0 µA
5.5
V
V
Ω
Ω
A
3/8
74V2G66
AC ELECTRICAL CHARACTERISTICS
= 50 pF, Inputtr=tf=3 ns)
(C
L
Symbol Parameter Test Condition Value Unit
V
CC
(V)
5.0
5.0
5.0
(**)
(**)
(**)
(*)
tr=tf=6ns
(*)
(*)
RL=1k
RL= 500
Ω
Ω
t
Delay Time 3.3
PD
Output Enable Time 3.3
t
PZL
t
PZH
t
Output Disable Time 3.3
PLZ
t
PHZ
C
Input Capacitance 5
IN
Switch Terminal
C
I/O
Capacitance
Power Dissipation
C
PD
Capacitance (note 1)
1)CPDisdefinedasthevalue oftheIC’sinternal equivalentcapacitance whichiscalculatedfromtheoperatingcurrentconsumption without load.(Referto
TestCircuit).Averageoperatingcurrentcanbe obtainedbythefollowingequation.I
(*) Voltagerangeis 3.3V±0.3V
(**) Voltagerangeis5V ±0.5V
3.3 2.5 pF
5.0 3
(opr)= CPD• VCC• fIN+ICC/2(switch).
CC
T
=25oC - 40 t o 85oC
A
Min. Typ. Max. Min. Max.
0.4 0.8 1.2
0.3 0.6 1.0
2.5 4.0 5.0
2.0 4.0 5.0
5.0 7.5 9.0
5.0 7.5 9.0
10
ns
ns
ns
pF
pF
ANALOGSWITCH CHARACTERISTICS (GND = 0 V, TA=25oC)
Symb o l Parameter Test Cond iti o n Val u e Unit
Sine Wave Distortion
(THD)
f
Frequency Response
MAX
(Switch ON)
Feedthrough
Attenuation
(Switch OFF)
Crosstalk (Control
Input to Signal Output)
Crosstalk (Between
Switches)
(*) Voltagerangeis 5V ±0.5V
V
(V)
3.3 2.75 f
5.0
3.3 Adjust fINvolt age t o Obt ain 0dBm at VOS.
5.0
3.3 V
5.0
3.3 R
5.0
3.3 R
5.0
CC
(*)
(*)
(*)
(*)
(*)
V
IN
(Vp-p)
= 1 KHz RL= 10KΩCL= 50 pF 0.04 %
IN
4
Inc reas e f
Frequ ency unti l dB Meter read s -3d B
IN
R
=50Ω,CL= 10pF
L
is centered at VCC/2.
Adjust f
IN
voltageto obtain 0dBm at V
IN
RL= 600Ω,CL= 50pF, fIN= 1MHz sine wave
= 600Ω,CL= 50pF, fIN= 1MHz squarewave
L
= 600Ω,CL= 50pF, fIN= 1MHz sine wave -60 dB
L
t
r=tf
= 6ns
0.04
150 MHz
180
-60 dB
IS
-60
60 mV
60
-60
4/8
SWITCHINGCHARACTERISTICS TEST CIRCUIT
74V2G66
t
PLZ,tPHZ,tPZL,tPZH
.
FEEDTHROUGHATTENUATION
BANDWIDTH ATTENUATION
C
I–OCI/O
CROSSTALK(controlto output)
MAXIMUMCONTROL FREQUENCY
GND(VSS)
5/8
74V2G66
CHANNEL RESITANCE
(RON)
I
CC
(Opr.)
6/8
SOT23-8L MECHANICAL DATA
74V2G66
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.90 1.45 35.4 57.1
A1 0.00 0.15 0.0 5.9
A2 0.90 1.30 35.4 51.2
b 0.22 0.38 8.6 14.9
C 0.09 0.20 3.5 7.8
D 2.80 3.00 110.2 118.1
E 2.60 3.00 102.3 118.1
E1 1.50 1.75 59.0 68.8
L 0.35 0.55 13.8 21.6
e 0.65 25.6
e1 1.95 76.7
mm mils
7/8
74V2G66
Information furnished isbelieved to be accurate andreliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.
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2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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