ST 2N2907AHR User Manual

Features
TO-18
LCC-3
3
1
2
3
1
2
LCC-3UB
Pin 4 in LCC-3UB is connected to the metallic lid.
Parameter Value
2N2907AHR
Hi-Rel 60 V - 0.6 A PNP transistor
Datasheet — production data
BV
CEO
(max) 0.6 A
I
C
H
at 10 V - 150 mA > 100
FE
Hermetic packages
ESCC and JANS qualified
European preferred part list EPPL
60 V
Description
The 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
3
4
1
2

Figure 1. Internal schematic diagram

Table 1. Device summary

Order codes Qualification Agency spec. Package Radiation level EPPL
JANS2N2907A JANS MIL-PRF-19500/291 LCC-3UB
2N2907AUB
SOC2907A LCC-3 Yes
2N2907AHR TO-18 -
1. Contact ST sales office for information about the specific conditions for products in die form and other JAN quality levels.
May 2012 Doc ID 15382 Rev 3 1/16
This is information on a product in full production.
ESCC 5201/001
(1)
-
LCC-3UB Yes
-
www.st.com
16
Contents 2N2907AHR
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5 Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1 Data code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.2 Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/16 Doc ID 15382 Rev 3
2N2907AHR Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit
V
V
V
Collector-base voltage (IE = 0) -60 V
CBO
Collector-emitter voltage (IB = 0) -60 V
CEO
Emitter-base voltage (IC = 0) -5 V
EBO
Collector current
I
for TO-18
C
for LCC-3 and LCC-3UB
Total dissipation at T
amb
≤ 25 °C ESCC: TO-18 LCC-3 and LCC-3UB LCC-3 and LCC-3UB
P
JANS: LCC-3UB
TOT
Total dissipation at T
case
≤ 25 °C
(1)
ESCC: TO-18
Total dissipation at T
sp(IS)
= 25 °C
JANS: LCC-3UB
T
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Storage temperature -65 to 200 °C
stg
T
Max. operating junction temperature 200 °C
J
-0.6
-0.5
0.4
0.4
0.73
0.5
1.8
1
A A
W

Table 3. Thermal data

Symbol Parameter
Thermal resistance junction-case (max) for JANS - -
R
thJC
Rt
hJSP(IS)
R
thJA
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Thermal resistance junction-case (max) for ESCC
Thermal resistance junction-solder pad (infinite sink) (max) for JANS
Thermal resistance junction-solder pad (infinite sink) (max) for ESCC
Thermal resistance junction-ambient (max) for JANS
Thermal resistance junction-ambient (max) for ESCC
Doc ID 15382 Rev 3 3/16
LCC-3
LCC-3UB
TO-18 Unit
-97
90 -
--
325 -
437
240
(1)
437
°C/W
Electrical characteristics 2N2907AHR

2 Electrical characteristics

(a)
JANS and ESCC version of the products are assembled and tested in compliance with the agency specification it is qualified in. The electrical characteristics of each version are provided in dedicated tables.
T
= 25 °C unless otherwise specified.
case

2.1 JANS electrical characteristics

Table 4. JANS electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit
= 60 V
V
CB
V
= 50 V
CB
VCB= 50 V T
= 50 V - 50 nA
V
CE
= 5 V
V
EB
V
= 4 V
EB
= 10 mA 60 - V
I
C
= 150 mA IB = 15 mA
I
C
IC = 500 mA IB = 50 mA
I
CBO
I
CES
I
EBO
V
(BR)CEO
V
CE(sat)
Collector cut-off current (I
= 0)
E
Collector cut-off current
(I
= 0)
E
Emitter cut-off current (I
= 0)
C
Collector-emitter
(1)
breakdown voltage
= 0)
(I
B
Collector-emitter
(1)
saturation voltage
= 150 °C
amb
10
-
10 10
10
­50
0.4
-
1.6
µA nA µA
µA nA
V V
= 150 mA IB = 15 mA
V
BE(sat)
Base-emitter
(1)
saturation voltage
I
C
IC=500mA IB =50mA
= 0.1 mA V
I
C
IC = 1 mA V I
= 10 mA V
(1)
h
FE
DC current gain
C
= 150 mA V
I
C
IC = 500 mA V I
= 10 mA V
C
T
= -55 °C
amb
= 20 V IC = 20 mA
V
CE
h
fe
Small signal current gain
f = 100 MHz V
= 10 V IC =1 mA
CE
f = 1 kHz
C
obo
a. For PNP type, voltage and current values are negative.
Output capacitance (I
= 0)
E
= 10 V
V
CB
100 kHz ≤ f ≤ 1 MHz
4/16 Doc ID 15382 Rev 3
CE
CE
CE
CE
CE
CE
= 10 V = 10 V = 10 V = 10 V = 10 V = 10 V
0.6 1.3
2.6
75
100
450 100 100
-
300
50 50
2
100
-
-8pF
V
2N2907AHR Electrical characteristics
Table 4. JANS electrical characteristics (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ibo
t
on
t
off
1. Pulsed duration = 300 µs, duty cycle ≤ 2 %
Output capacitance (IE = 0)
Tu r n - on t i m e
Turn-off time
V
= 2 V
EB
100 kHz ≤ f ≤ 1 MHz
V
= 30 V IC = 150 mA
CC
I
= 15 mA
B1
V
= 30 V IC = 150 mA
CC
I
= -I
B1
= 15 mA
B2

2.2 ESCC electrical characteristics

Table 5. ESCC electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit
= 50 V
I
CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
Collector cut-off current (I
Collector-base breakdown voltage
= 0)
(I
E
Collector-emitter
(1)
breakdown voltage
= 0)
(I
B
Emitter-base breakdown voltage
(I
= 0)
C
Collector-emitter
(1)
saturation voltage
= 0)
E
V
CB
V
= 50 V T
CB
= 10 µA 60 - V
I
C
= 10 mA 60 - V
I
C
= 10 µA 5 - V
I
E
= 150 mA IB = 15 mA - 0.4 V
I
C
= 150 °C
amb
-30pF
-45ns
- 300 ns
10
­10
nA µA
V
BE(sat)
(1)
saturation voltage
I
C
Base-emitter
IC = 0.1 mA V
(1)
h
FE
h
fe
C
obo
t
on
t
off
1. Pulsed duration = 300 µs, duty cycle ≤ 2 %
DC current gain
Small signal current gain
Output capacitance (IE = 0)
Tu r n - on t i m e
Turn-off time
IC = 10 mA V I
C
I
C
V f = 100 MHz
V 100 kHz ≤ f ≤ 1 MHz
V I
B1
V I
B1
Doc ID 15382 Rev 3 5/16
= 150 mA IB = 15 mA 0.87 1.3 V
= 10 V
CE
= 10 V
CE
= 150 mA V = 500 mA V
= 20 V IC = 20 mA
CE
= 10 V
CB
= 30 V IC = 150 mA
CC
CE
CE
= 10 V = 10 V
= 15 mA
= 30 V IC = 150 mA
CC
= -I
= 15 mA
B2
75 100 100
-
50
2-
-8pF
-45ns
- 300 ns
300
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