ST 2N2907AHR User Manual

2N2907AHR

Hi-Rel 60 V - 0.6 A PNP transistor

Features

Parameter	Value
BVCEO	60 V
IC (max)	0.6 A
HFE at 10 V - 150 mA	> 100

■Linear gain characteristics

■Hermetic packages

■ESCC and JANS qualified

■European preferred part list EPPL

Description

Datasheet — production data

		1
		2
		3
		TO-18
3		3
		4
	1	1
2		2
LCC-3		LCC-3UB

Pin 4 in LCC-3UB is connected to the metallic lid.

Figure 1. Internal schematic diagram

The 2N2907AHR is a silicon planar PNP transistor specifically designed and housed in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MIL-PRF19500 compliance) and in the ESCC qualification system (ESCC 5000 compliance). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.

Table 1.	Device summary(1)
Order codes		Qualification	Agency spec.	Package	Radiation level		EPPL
JANS2N2907A		JANS	MIL-PRF-19500/291	LCC-3UB			-
2N2907AUB				LCC-3UB	-		Yes
SOC2907A		ESCC	5201/001	LCC-3			Yes
2N2907AHR				TO-18			-

1. Contact ST sales office for information about the specific conditions for products in die form and other JAN quality levels.

May 2012

Doc ID 15382 Rev 3

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This is information on a product in full production.

www.st.com

Contents	2N2907AHR

Contents

1	Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		. 3
2	Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		4
	2.1	JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	4
	2.2	ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	5
	2.3	Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	6
	2.4	Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	7
3	Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		9
4	Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		14
5	Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		14
	5.1	Data code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	14
	5.2	Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	15
6	Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .		16

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2N2907AHR	Electrical ratings

1 Electrical ratings

	Table 2.	Absolute maximum ratings
	Symbol		Parameter	Value	Unit
	VCBO	Collector-base voltage (IE = 0)		-60	V
	VCEO	Collector-emitter voltage (IB = 0)		-60	V
	VEBO	Emitter-base voltage (IC = 0)		-5	V
		Collector current
	IC		for TO-18	-0.6	A
			for LCC-3 and LCC-3UB	-0.5	A
		Total dissipation at Tamb ≤25 °C
		ESCC:	TO-18	0.4
			LCC-3 and LCC-3UB	0.4
			LCC-3 and LCC-3UB (1)	0.73
	PTOT	JANS:	LCC-3UB	0.5	W
		Total dissipation at Tcase ≤25 °C
				1.8
		ESCC:	TO-18
		Total dissipation at Tsp(IS) = 25 °C		1
		JANS:	LCC-3UB
	Tstg	Storage temperature		-65 to 200	°C
	TJ	Max. operating junction temperature		200	°C

1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.

	Table 3.	Thermal data
	Symbol	Parameter	LCC-3	TO-18	Unit
			LCC-3UB
		Thermal resistance junction-case (max) for JANS	-	-
	RthJC
		Thermal resistance junction-case (max) for	-	97
		ESCC
		Thermal resistance junction-solder pad (infinite	90	-
		sink) (max) for JANS
	RthJSP(IS)
					°C/W
		Thermal resistance junction-solder pad (infinite	-	-
		sink) (max) for ESCC
		Thermal resistance junction-ambient (max) for	325	-
		JANS
	RthJA
		Thermal resistance junction-ambient (max) for	437	437
		ESCC	240(1)

1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.

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Electrical characteristics	2N2907AHR

2 Electrical characteristics(a)

JANS and ESCC version of the products are assembled and tested in compliance with the agency specification it is qualified in. The electrical characteristics of each version are provided in dedicated tables.

Tcase = 25 °C unless otherwise specified.

2.1JANS electrical characteristics

Table 4.	JANS electrical characteristics
Symbol	Parameter	Test conditions		Min.	Typ.	Max.	Unit
	Collector cut-off	VCB = 60 V				10	µA
ICBO		VCB = 50 V			-	10	nA
	current (IE = 0)
		VCB= 50 V	Tamb = 150 °C			10	µA
	Collector cut-off
ICES	current	VCE = 50 V			-	50	nA
	(IE = 0)
IEBO	Emitter cut-off current	VEB = 5 V			-	10	µA
	(IC = 0)	VEB = 4 V				50	nA
V(BR)CEO (1)	Collector-emitter
	breakdown voltage	IC = 10 mA		60	-		V
	(IB = 0)
(1)	Collector-emitter	IC = 150 mA	IB = 15 mA		-	0.4	V
VCE(sat)	saturation voltage	IC = 500 mA	IB = 50 mA			1.6	V
(1)	Base-emitter	IC = 150 mA	IB = 15 mA	0.6		1.3	V
VBE(sat)	saturation voltage	IC=500mA	IB =50mA			2.6
		IC = 0.1 mA	VCE = 10 V	75
		IC = 1 mA	VCE = 10 V	100		450
(1)		IC = 10 mA	VCE = 10 V	100
	DC current gain	IC = 150 mA	VCE = 10 V	100	-	300
hFE
		IC = 500 mA	VCE = 10 V	50
		IC = 10 mA	VCE = 10 V	50
		Tamb = -55 °C
		VCE = 20 V	IC = 20 mA	2
hfe	Small signal current	f = 100 MHz			-
	gain	VCE = 10 V	IC =1 mA	100
		f = 1 kHz
Cobo	Output capacitance	VCB = 10 V			-	8	pF
	(IE = 0)	100 kHz ≤ f ≤1 MHz

a. For PNP type, voltage and current values are negative.

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2N2907AHR					Electrical characteristics
	Table 4.	JANS electrical characteristics (continued)
	Symbol	Parameter	Test conditions		Min.	Typ.	Max.	Unit
	Cibo	Output capacitance	VEB = 2 V			-	30	pF
		(IE = 0)	100 kHz ≤ f ≤1 MHz
	ton	Turn-on time	VCC = 30 V	IC = 150 mA		-	45	ns
			IB1 = 15 mA
	toff	Turn-off time	VCC = 30 V	IC = 150 mA		-	300	ns
			IB1 = -IB2 = 15 mA

1. Pulsed duration = 300 µs, duty cycle ≤ 2 %

2.2ESCC electrical characteristics

Table 5.	ESCC electrical characteristics
Symbol	Parameter	Test conditions		Min.	Typ.	Max.	Unit
ICBO	Collector cut-off	VCB = 50 V			-	10	nA
	current (IE = 0)	VCB= 50 V	Tamb = 150 °C			10	µA
	Collector-base
V(BR)CBO	breakdown voltage	IC = 10 µA		60	-		V
	(IE = 0)
V(BR)CEO (1)	Collector-emitter
	breakdown voltage	IC = 10 mA		60	-		V
	(IB = 0)
	Emitter-base
V(BR)EBO	breakdown voltage	IE = 10 µA		5	-		V
	(IC = 0)
(1)	Collector-emitter	IC = 150 mA	IB = 15 mA		-	0.4	V
VCE(sat)	saturation voltage
(1)	Base-emitter	IC = 150 mA	IB = 15 mA		0.87	1.3	V
VBE(sat)	saturation voltage
		IC = 0.1 mA	VCE = 10 V	75
(1)	DC current gain	IC = 10 mA	VCE = 10 V	100	-
hFE		IC = 150 mA	VCE = 10 V	100		300
		IC = 500 mA	VCE = 10 V	50
hfe	Small signal current	VCE = 20 V	IC = 20 mA	2	-
	gain	f = 100 MHz
Cobo	Output capacitance	VCB = 10 V			-	8	pF
	(IE = 0)	100 kHz ≤ f ≤1 MHz
ton	Turn-on time	VCC = 30 V	IC = 150 mA		-	45	ns
		IB1 = 15 mA
toff	Turn-off time	VCC = 30 V	IC = 150 mA		-	300	ns
		IB1 = -IB2 = 15 mA
1. Pulsed duration = 300 µs, duty cycle ≤ 2 %

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