Pin 4 in LCC-3UB is connected to the metallic lid.
ParameterValue
2N2907AHR
Hi-Rel 60 V - 0.6 A PNP transistor
Datasheet — production data
BV
CEO
(max)0.6 A
I
C
H
at 10 V - 150 mA> 100
FE
■ Linear gain characteristics
■ Hermetic packages
■ ESCC and JANS qualified
■ European preferred part list EPPL
60 V
Description
The 2N2907AHR is a silicon planar PNP
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
3
4
1
2
Figure 1.Internal schematic diagram
Table 1.Device summary
Order codesQualificationAgency spec.PackageRadiation levelEPPL
JANS2N2907AJANSMIL-PRF-19500/291LCC-3UB
2N2907AUB
SOC2907ALCC-3Yes
2N2907AHRTO-18-
1. Contact ST sales office for information about the specific conditions for products in die form and other JAN quality levels.
May 2012Doc ID 15382 Rev 31/16
This is information on a product in full production.
≤ 25 °C
ESCC: TO-18
LCC-3 and LCC-3UB
LCC-3 and LCC-3UB
P
JANS: LCC-3UB
TOT
Total dissipation at T
case
≤ 25 °C
(1)
ESCC: TO-18
Total dissipation at T
sp(IS)
= 25 °C
JANS: LCC-3UB
T
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Storage temperature-65 to 200°C
stg
T
Max. operating junction temperature200°C
J
-0.6
-0.5
0.4
0.4
0.73
0.5
1.8
1
A
A
W
Table 3.Thermal data
SymbolParameter
Thermal resistance junction-case (max) for JANS--
R
thJC
Rt
hJSP(IS)
R
thJA
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Thermal resistance junction-case (max) for
ESCC
Thermal resistance junction-solder pad (infinite
sink) (max) for JANS
Thermal resistance junction-solder pad (infinite
sink) (max) for ESCC
Thermal resistance junction-ambient (max) for
JANS
Thermal resistance junction-ambient (max) for
ESCC
Doc ID 15382 Rev 33/16
LCC-3
LCC-3UB
TO-18Unit
-97
90-
--
325-
437
240
(1)
437
°C/W
Electrical characteristics2N2907AHR
2 Electrical characteristics
(a)
JANS and ESCC version of the products are assembled and tested in compliance with the
agency specification it is qualified in. The electrical characteristics of each version are
provided in dedicated tables.
T
= 25 °C unless otherwise specified.
case
2.1 JANS electrical characteristics
Table 4.JANS electrical characteristics
SymbolParameterTest conditionsMin.Typ.Max.Unit
= 60 V
V
CB
V
= 50 V
CB
VCB= 50 V T
= 50 V-50nA
V
CE
= 5 V
V
EB
V
= 4 V
EB
= 10 mA60-V
I
C
= 150 mA IB = 15 mA
I
C
IC = 500 mA IB = 50 mA
I
CBO
I
CES
I
EBO
V
(BR)CEO
V
CE(sat)
Collector cut-off
current (I
= 0)
E
Collector cut-off
current
(I
= 0)
E
Emitter cut-off current
(I
= 0)
C
Collector-emitter
(1)
breakdown voltage
= 0)
(I
B
Collector-emitter
(1)
saturation voltage
= 150 °C
amb
10
-
10
10
10
50
0.4
-
1.6
µA
nA
µA
µA
nA
V
V
= 150 mA IB = 15 mA
V
BE(sat)
Base-emitter
(1)
saturation voltage
I
C
IC=500mA IB =50mA
= 0.1 mA V
I
C
IC = 1 mA V
I
= 10 mA V
(1)
h
FE
DC current gain
C
= 150 mA V
I
C
IC = 500 mA V
I
= 10 mA V
C
T
= -55 °C
amb
= 20 V IC = 20 mA
V
CE
h
fe
Small signal current
gain
f = 100 MHz
V
= 10 V IC =1 mA
CE
f = 1 kHz
C
obo
a. For PNP type, voltage and current values are negative.