ST 1N5817, 1N5818, 1N5819 User Manual

Features

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low forward voltage drop

■ Avalanche capability specified

1N5817, 1N5818, 1N5819

Low drop power Schottky rectifier

A

K

Description

Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers.

DO-41

Table 1. Device summary

Symbol Value Unit

I

F(AV)

V

RRM

T

j

(max) 0.45 V

V

F

1A

40 V

150 °C

July 2011 Doc ID 6262 Rev 5 1/7

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Characteristics 1N5817, 1N5818, 1N5819

1 Characteristics

Table 2. Absolute ratings (limiting values)

Value

Symbol Parameter

1N5817 1N5818 1N5819

Unit

V

I

F(RMS)

I

F(AV)

I

P

T

Repetitive peak reverse voltage 20 30 40 V

RRM

Forward rms current 10 A

Average forward current

Surge non repetitive

FSM

forward current

Repetitive peak

ARM

avalanche power

Storage temperature range -65 to + 150 °C

stg

Maximum operating junction temperature

T

j

= 125 °C, δ = 0.5 1 A

T

L

= 10 ms Sinusoidal 25 A

t

p

t

= 1 µs, Tj = 25 °C 1200 1200 900 W

p

(1)

150 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

<

Rth(j-a)

1

dPtot

1. condition to avoid thermal runaway for a diode on its own heatsink.

dTj

Table 3. Thermal resistances

Symbol Parameter Value Unit

R

th (j-a)

R

Table 4. Static electrical characteristics

Junction to ambient Lead length = 10 mm 100 °C/W

Junction to lead Lead length = 10 mm 45 °C/W

th (j-l)

Symbol Parameter Tests conditions 1N5817 1N5818 1N5819 Unit

= 25 °C

T

R

V

1. Pulse test : tp = 380 µs, δ < 2%

current

(1)

Forward voltage drop

F

Reverse leakage

(1)

I

j

T

= 100 °C 10 10 10 mA

j

T

= 25 °C I

j

= 25 °C I

T

j

= V

V

R

= 1 A 0.45 0.50 0.55 V

F

= 3 A 0.75 0.80 0.85 V

F

To evaluate the conduction losses use the following equations : P = 0.3 x I P = 0.3 x I

2/7 Doc ID 6262 Rev 5

F(AV)

+ 0.090 I

+ 0.150 I

F2(RMS )

for 1N5817 / 1N5818 for 1N5819

RRM

0.5 0.5 0.5 mA

1N5817, 1N5818, 1N5819 Characteristics

Figure 1. Average forward power dissipation

versus average forward current (1N5817/1N5818)

PF(av)(W)

0.6

0.5

0.4

d = 0.05

d = 0.1

d = 0.2

d = 0.5

d =1

0.3

0.2

T

0.1

=tp/T

0.0

IF(av) (A)

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

d

tp

Figure 3. Average forward current versus

ambient temperature (δ = 0.5) (1N5817/1N5818)

IF(av)(A)

1.2

1.0

0.8

0.6

Rth(j-a)=Rth(j-l)=45°C/W

Rth(j-a)=100°C/W

Figure 2. Average forward power dissipation

versus average forward current (1N5819)

PF(av)(W)

0.7

0.6

d = 0.05

d = 0.1

d = 0.2

d = 0.5

0.5

0.4

d =1

0.3

d

=tp/T

T

tp

0.2

0.1

IF(av) (A)

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

Figure 4. Average forward current versus

ambient temperature (δ = 0.5) (1N5819)

IF(av)(A)

1.2

1.0

0.8

0.6

Rth(j-a)=Rth(j-l)=45°C/W

Rth(j-a)=100°C/W

0.4

T

0.2

=tp/T

d

0.0 0 25 50 75 100 125 150

tp

Tamb(°C)

Figure 5. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1 µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

0.4

T

0.2

=tp/T

d

0.0 0 25 50 75 100 125 150

tp

Tamb(°C)

Figure 6. Normalized avalanche power

derating versus junction temperature

P(Tj)

ARM

P (25 °C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Doc ID 6262 Rev 5 3/7