Sony SGM2014AN Datasheet

Description

The SGM2014AN is an N-channel dual gate GaAs
MES FET for UHF band low-noise amplification.
This FET is suitable for a wide range of applications
including TV tuners, cellular radios, and DBS IF
amplifiers.

Features

• Ultra small package

• Low voltage operation

• Low noise: NF = 1.5dB (typ.) at 900MHz

• High gain: Ga = 18dB (typ.) at 900MHz

• Low cross-modulation

• High stability

• Built-in gate-protection diode

Application

UHF band amplifier, mixer and oscillator

Structure

GaAs N-channel dual-gate metal semiconductor field-effect transistor

Absolute Maximum Ratings (Ta = 25°C)

• Drain to source voltage VDSX 12 V

• Gate 1 to source voltage VG1S –5 V

• Gate 2 to source voltage VG2S –5 V

• Drain current ID 55 mA

• Allowable power dissipation PD 100 mW

• Channel temperature Tch 125 °C

• Storage temperature Tstg –55 to +150 °C

– 1 –

SGM2014AN

E97938-PS

GaAs N-channel Dual Gate MES FET

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

M-281

For the availability of this product, please contact the sales office.

– 2 –

SGM2014AN

Typical Characteristics (Ta = 25°C)

Electrical Characteristics (Ta = 25°C)

Item

Drain cut-off current

Gate 1 to source current

Gate 2 to source current

Drain saturation current

Gate 1 to source cut-off voltage

Gate 2 to source cut-off voltage

Forward transfer admittance

Input capacitance
Feedback capacitance
Noise figure

Associated gain

IDSX

IG1SS

IG2SS

IDSS

VG1S (OFF)

VG2S (OFF)

gm

Ciss
Crss
NF

Ga

VDS = 12V
VG1S = –4V
VG2S = 0V

VG1S = –4.5V
VG2S = 0V
VDS = 0V

VG2S = –4.5V
VG1S = 0V
VDS = 0V

VDS = 5V
VG1S = 0V
VG2S = 0V

VDS = 5V
ID = 100µA
VG2S = 0V

VDS = 5V
ID = 100µA
VG1S = 0V

VDS = 5V
ID = 10mA
VG2S =1.5V
f = 1kHz

VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 1MHz

VDS = 5V
ID = 10mA
VG2S = 1.5V
f = 900MHz

8

13

15

17

0.9
25

1.5
18

50

–8

–8

28

–2.5

–2.5

2

50

2.5

µA

µA

µA

mA

V

V

ms

pF

fF

dB
dB

Symbol Condition Min. Typ. Max. unit

40

(VG2S = 1.5V)

30

20

– Drain current [mA]

D

I

10

0

0 1 2 3 4 5 6

V

DS – Drain to source voltage [V]

ID vs. VDS

VG1S
= 0V

–0.3V

–0.6V

–0.9V
–1.2V

–1.5V

ID vs. VG1S

25

(VDS = 5V)

20

15

10

– Drain current [mA]

D

I

5

0

–2.0 –1.5 –1.0 –0.5 0

V

G1S – Gate 1 to source voltage [V]

V

G2S

= 1.5V

1.0V

0.5V

0V

–0.5V

–1.0V

–1.5V