Sony SGM2013N Datasheet
GaAs N-channel Dual-Gate MES FET
Description
The SGM2013N is an N-channel dual-gate GaAs
MES FET for UHF-band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular/cordless phone.
Features
• Ultra-small package
• Low voltage operation
• Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz
• High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz
• High stability
• Built-in gate protection diode
Application
UHF-band high-frequency amplifier and mixer
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage VDSX 6V
•Gate 1 to source voltage VG1S –4 V
• Gate 2 to source voltage VG2S –4 V
• Drain current ID 18 mA
• Allowable power dissipation PD 100 mW
• Channel temperature Tch 125 °C
• Storage temperature Tstg –55 to +150 °C
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E97144-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SGM2013N
M-281
For the availability of this product, please contact the sales office.
– 2 –
SGM2013N
Typical Characteristics (Ta = 25°C)
Electrical Characteristics (Ta = 25°C)
Item
Gate 1 to source current
Gate 2 to source current
Drain saturation current
Gate 1 to source cut-off
voltage
Gate 2 to source cut-off
voltage
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
NF associated gain
IG1SS
IG2SS
IDSS
VG1S
(OFF)
VG2S
(OFF)
gm
Ciss
Crss
NF
Ga
VG1S = –3V
VG2S = 0V
VDS = 0V
VG2S = –3V
VG1S = 0V
VDS = 0V
VDS = 2V
VG1S = 0V
VG2S = 0V
VDS = 2V
ID = 100µA
VG2S = 0V
VDS = 2V
ID = 100µA
VG1S = 0V
VDS = 2V
ID = 2mA
VG2S = 0.5V
f = 1kHz
VDS = 2V
ID = 2mA
VG2S = 0.5V
f = 1MHz
VDS = 2V
ID = 2mA
VG2S = 0.5V
f = 900MHz
4
8
15
11
0.55
15
1.4
18
–4
–4
16
–1.5
–1.5
1
30
2.5
µA
µA
mA
V
V
ms
pF
fF
dB
dB
Symbol Conditions Min. Typ. Max. Unit
20
(VG2S = 0.5V)
16
12
8
– Drain current [mA]
D
I
4
0
0 1 2 3 4 5 6
VDS – Drain to source voltage [V]
ID vs. VDS
G1S
V
= 0V
–0.2V
–0.4V
–0.6V
–0.8V
–1.0V
ID vs. VG1S
20
(VDS = 2V)
16
12
8
– Drain current [mA]
D
I
4
0
–2.0 –1.5 –1.0 –0.5 0
VG1S – Gate 1 to source voltage [V]
G2S
V
= 0.5V
0.25V
0V
–0.25V
–0.5V
–0.75V
–1.0V
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