Sony CXK77B1810AGB-6, CXK77B1810AGB-5 Datasheet

CXK77B1810AGB

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High Speed Bi-CMOS Synchronous Static RAM

Description

The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles.

Features

• Fast cycle time (Cycle) (Frequency)

CXK77B1810AGB-5 5ns 200MHz

-6 6ns 167MHz

• Inputs and outputs are GTL/HSTL compatible

• Controlled Impedance Driver

• Single 3.3V power supply: 3.3V±0.15V

• Byte-write possible

• OE asynchronization

• JTAG test circuit

• Package 119TBGA

• 4 kinds of synchronous operation mode

Dual clock mode (D-C mode)

Preliminary

119 pin BGA (Plastic)

Function

65536 word x 18bit High Speed Bi-CMOS Synchronous SRAM

Structure

Silicon gate Bi-CMOS IC

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PE96811

Block Diagram

A0 to 15

Input Reg.

Write Store Reg.

2:1 Mux

Add.

Write pulse

Read Comp.

64K × 18

Dout

Din

2:1 Mux

Reg.

Output latch

CXK77B1810AGB

a to b

K/K C/C

M1 M2

Reg.

Self

Reg.

Mode Control

Time Write Logic

Output Clock

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