Sony CXK5V81000ATM-85LLX, CXK5V81000ATM-10LLX Datasheet
CXK5V81000ATM-85LLX/10LLX
For the availability of this product, please contact the sales office.
131072-word × 8-bit High Speed CMOS Static RAM
Description
The CXK5V81000ATM is a high speed CMOS
static RAM organized as 131072-words by 8-bits.
A polysilicon TFT cell technology realized
extremely low stand-by current and higher data
retention stability.
Operating on a single 3.3V supply, and special
feature are low power consumption, high speed.
The CXK5V81000ATM is a suitable RAM for
portable equipment with battery back up.
Features
• Extended operating temperature range:
–25 to +85°C
• Fast access time:
(Access time)
-85LLX 85ns (Max.)
-10LLX 100ns (Max.)
• Low standby current: 28µA (Max.)
• Low data retention current: 24µA (Max.)
• Single 3.3V supply: 3.3V ± 0.3V
• Low voltage data retention: 2.0V (Min.)
• Package
8mm × 20mm 32 pin TSOP package
Function
131072-word x 8-bit static RAM
Block Diagram
A10
A11
A9
A8
A13
A15
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
OE
WE
CE1
CE2
Buffer
Buffer
Buffer
32 pin TSOP (Plastic)
Row
Decoder
Memory
Matrix
1024 × 512
I/O Gate
Column
Decoder
I/O Buffer
I/O1
VCC
GND
I/O8
Structure
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
E95715-ST
CXK5V81000ATM
Pin Configuration (Top View)
A11
A13
WE
CE2
A15
Vcc
NC
A16
A14
A12
1
2
A9
3
A8
4
5
6
7
8
9
10
11
12
13
A7
14
A6
A5
15
16
A4
CXK5V81000ATM
32
OE
31
A10
30
CE1
29
I/O8
28
I/O7
27
I/O6
26
I/O5
I/O4
25
GND
24
I/O3
23
I/O2
22
I/O1
21
A0
20
19
A1
18
A2
A3
17
Absolute Maximum Ratings (Ta = 25°C, GND = 0V)
Item Symbol Rating Unit
Supply voltage
Input voltage
Input and output voltage
VCC
VIN
VI/O
–0.5 to +4.6
–0.5∗ to VCC + 0.5
–0.5∗ to VCC + 0.5
V
V
V
Pin Description
Symbol Description
A0 to A16
I/O1 to I/O8
CE1, CE2
WE
OE
VCC
GND
NC
Address input
Data input output
Chip enable 1, 2 input
Write enable input
Output enable input
Power supply
Ground
No connection
Allowable power dissipation
Operating temperature
Storage temperature
Soldering temperature · time
PD
Topr
Tstg
Tsolder
0.7
–25 to +85
–55 to +150
235 · 10
W
°C
°C
°C · s
∗ VIN, VI/O = –3.0V Min. for pulse width less than 50ns.
Truth Table
CE1 CE2 OE WE
H
×
×
×
×
L
×
×
L
H
H
H
L
H
L
H
L
H
×
L
Mode I/O pin VCC Current
Not selected
Not selected
Output disable
Read
Write
High Z
High Z
High Z
Data out
Data in
ISB1, ISB2
ISB1, ISB2
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
×: “H” or “L”
DC Recommended Operating Conditions (Ta = –25 to +85°C, GND = 0V)
Item Symbol Min. Typ. Max. Unit
Supply voltage
Input high voltage
Input low voltage
VCC
VIH
VIL
3.0
2.2
–0.3∗
∗ VIL = –3.0V Min. for pulse width less than 50ns.
– 2 –
3.3
—
—
3.6
VCC + 0.3
0.6
V
V
V
Electrical Characteristics
CXK5V81000ATM
• DC Characteristics
Item Symbol Min.
Input leakage current
Output leakage current
Operating power supply
current
Average operating current
Standby current
Output high voltage
ILI
ILO
ICC1
ICC2
ICC3
ISB1
ISB2
VOH
(VCC = 3.3V ± 0.3V, GND = 0V, Ta = –25 to +85°C)
VIN = GND to VCC
CE1 = VIH or CE2 = VIL or
OE = VIH or WE = VIL
VI/O = GND to VCC
CE1 = VIL, CE2 = VIH
VIN = VIH or VIL
IOUT = 0mA
Min. cycle
duty = 100%
IOUT = 0mA
Cycle time 1µs
duty = 100%
IOUT = 0mA
CE1 ≤ 0.2V
CE2 ≥ Vcc – 0.2V
VIL ≤ 0.2V
VIH ≥ Vcc – 0.2V
CE2 ≤ 0.2V
CE1 ≥ Vcc – 0.2V
or
{
CE2 ≥ Vcc – 0.2V
CE1 = VIH or CE2 = VIL
IOH = –2.0mA
85LLX
10LLX
–25 to +85°C
–25 to +70°C
+25°C
Typ.∗
–1
–1
—
—
—
—510
—
—
—
—
2.4
—
—
1
30
25
—
—
0.48
0.12
—
Max. UnitTest conditions
+1
+1
3
40
35
28
14
—
1.4
—
µA
µA
mA
mA
mA
µA
mA
V
Output low voltage
∗ VCC = 3.3V, Ta = 25°C
VOL
IOL = 2.0mA
—
—
0.4
V
– 3 –
Loading...