Sony CXK5V16100TM-85LLX, CXK5V16100TM-10LLX Datasheet

CXK5V16100TM-85LLX/10LLX

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65536-word × 16-bit High Speed CMOS Static RAM

Description

CXK5V16100TM is a general purpose high speed CMOS static RAM organized as 65536-words by 16-bits. Operating on a single 3.3V supply, this asynchronous IC is suitable for high speed and low power consumption applications where battery back up for nonvolatility is required.

Features

• Extended operating temperature range: –25 to +85°C

• Fast access time: (Access time)

-85LLX 85ns (max.)

-10LLX 100ns (max.)

• Low power consumption operation:

Standby / DC operation

1.7µW (typ.) / 3.3mW (typ.)

• Single 3.3V supply: 3.3V±0.3V

• Fully static memory: No clock or timing strobe

required

• Equal access and cycle time

• Common data input and output: three state output

• Directly LVTTL compatible: All inputs and outputs

• Low voltage data retention: 2.0V (min.)

• 400mil 44pin TSOP (type II) package

Function

65536-word × 16-bit static RAM

Structure

Silicon gate CMOS IC

44 pin TSOP (PIastic)

Block Diagram

A1 A0 A7 A6 A5 A4 A3 A2 A15

A14

CE UB LB OE WE

A13 A12 A11 A10 A9 A8

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

Control

Buffer

Vcc

GND

Memory

Matrix

512 × 1024

I/O Gate Column Decoder

I/O Buffer

I/O1 I/O8

Row

Decoder

Pre

Decoder

Memory

Matrix

512 × 1024

I/O Gate

Column

Decoder

I/O Buffer

I/O9 I/O16

Vcc

GND

– 1 –

E93869A57-PP

I/O1 I/O2 I/O3 I/O4

Vcc

GND

I/O5 I/O6 I/O7 I/O8

WE A15 A14 A13 A12

CE

NC

CXK5V16100TM

Pin DescriptionPin Configuration (Top View)

A4

1

A3

2

A2

3

A1

4

A0

5 6 7 8

9 10 11 12 13 14 15 16 17 18 19 20 21 22

A5

44

A6

43

A7

42

OE

41

UB

40

LB

39

I/O16

38

I/O15

37

I/O14

36

I/O13

35

GND

34

Vcc

33

I/O12

32

I/O11

31

I/O10

30

I/O9

29

NC

28

A8

27

A9

26

A10

25

A11

24

NC

23

Symbol A0 to A15 I/O1 to I/O16 CE LB UB WE OE VCC GND NC

Address input Data input/output Chip enable input Byte enable input (I/O1 to I/O8) Byte enable input (I/O9 to I/O16) Write enable input Output enable input +3.3V power supply Ground No connection

Description

Absolute Maximum Ratings (Ta = 25°C, GND = 0V)

Item Symbol Rating Unit Supply voltage Input voltage Input and output voltage Allowable power dissipation Operating temperature Storage temperature Soldering temperature • time

∗

VIN, VI/O = –3.0V Min. for pulse width less than 50ns.

VCC VIN VI/O PD Topr Tstg Tsolder

–0.5 to +4.6 –0.5∗to VCC + 0.5 –0.5∗to VCC + 0.5

0.7

–25 to +85

–55 to +150

235 • 10

V V V

W °C °C

°C • s

Truth Table

CE

OE WE LB UB I/O1 to I/O8 I/O9 to I/O16 Vcc Current

H

×

L

H

L

H

×

L

H

L

Not selected Read Read High-Z

Not selected Read High-Z Read

ISB1, ISB2 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3

L

×

L

H

L

×

×: “H” or “L”

L

H

×

H

Write

L

Write

H

Not Write/Hi-Z

L

High-Z

×

High-Z

H

Write Not Write/Hi-Z Write High-Z High-Z

ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3 ICC1, ICC2, ICC3

– 2 –

DC Recommended Operating Conditions (Ta = –25 to +85°C, GND = 0V)

Item Symbol Min. Typ. Max. Unit

CXK5V16100TM

Supply voltage Input high voltage Input low voltage

∗

VIL = –3.0V Min. for pulse width less than 50ns.

VCC VIH VIL

3.0

2.0

–0.3

3.3 —

∗

—

3.6

VCC + 0.3

0.8

V V V

Electrical Characteristics

DC and operating characteristics (VCC = 3.3V ± 0.3V, GND = 0V, Ta = –25 to +85°C)

—

1

40 35

10

∗

Max. UnitTest condition

1

3

µA

mA

55

mA

50

20

mA

Item Symbol Min. Typ.

Input leakage current

Output leakage current

Operating power supply current

Average operating current

ILI

ILO

ICC1

ICC2

ICC3

VIN = GND to VCC CE = VIH or UB = VIH or LB = VIH or

OE = VIH or WE = VIL VI/O = GND to VCC

CE = VIL VIN = VIH or VIL IOUT = 0mA

Min. cycle

85LLX Duty = 100% IOUT = 0mA

10LLX Cycle time 1µs

Duty = 100% IOUT = 0mA CE ≤ 0.2V

–1

—

— —

—

VIL ≤ 0.2V VIH ≥ VCC – 0.2V

Standby current

Output high voltage

Output low voltage

∗

VCC = 3.3V, Ta = 25°C

ISB1

ISB2 VOH

VOL

CE ≥ VCC – 0.2V

CE = VIH IOH = –2.0mA

IOL = 2.0mA

– 3 –

–25 to +85°C

–25 to +70°C

–25 to +40°C

+25°C

— — — — —

2.4

—

— — —

0.5

0.03 —

—

40 20

4 2

0.6 —

0.4

µA

mA

V