Sony CXK5T8512TN-12LLX, CXK5T8512TN-10LLX, CXK5T8512TM Datasheet

CXK5T8512TM/TN-10LLX/12LLX

For the availability of this product, please contact the sales office.

65536-word × 8-bit High Speed CMOS Static RAM

Description

The CXK5T8512TM/TN is a high speed CMOS

static RAM organized as 65536-words by 8-bits.

Special feature are low power consumption and

high speed.

The CXK5T8512TM/TN is a suitable RAM for

portable equipment with battery back up.

Features

• Extended operating temperature range:

–25 to +85°C

• Wide supply voltage range operation: 2.7 to 3.6V

• Fast access time: (Access time)

3.0V operation
CXK5T8512TM/TN-10LLX 100ns (Max.)
CXK5T8512TM/TN-12LLX 120ns (Max.)

3.3V operation
CXK5T8512TM/TN-10LLX 85ns (Max.)
CXK5T8512TM/TN-12LLX 100ns (Max.)

• Low standby current: 14µA (Max.)

• Low data retention current: 12µA (Max.)

• Low power data retention: 2.0V (Min.)

• Package line-up

CXK5T8512TM

8mm × 20mm 32 pin TSOP package

CXK5T8512TN

8mm × 13.4mm 32 pin TSOP package

Function

65536-word × 8-bit static RAM

CXK5T8512TM

32 pin TSOP (Plastic)

Block Diagram

A15
A13

A8

A11

A9
A7
A6

A5
A14
A12

A4

A3
A10

A0

A2

A1

OE

WE

CE1
CE2

Buffer

Buffer

Buffer

Preliminary

CXK5T8512TN

32 pin TSOP (Plastic)

Row

Decoder

Memory

Matrix

1024 × 512

I/O Gate

Column

Decoder

I/O Buffer

I/O1 I/O8

V

CC

GND

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

PE96727-PS

CXK5T8512TM/TN

Pin Configuration (Top View)

1

A11

2

A9

3

A8

4

A13

5

WE

CE2

6

A15

7
8

Vcc

NC

NC
A14
A12

A11

A13

WE

CE2

A15
Vcc

NC

NC
A14
A12

9
10
11

12

A7

13

A6

14

A5

15
16

A4

1

2

A9

3

A8

4

5

6

7

8

9
10
11

12

A7

13

A6

14

A5

15
16

A4

CXK5T8512TM

(Standard Pinout)

CXK5T8512TN

(Standard Pinout)

Pin Description

Symbol Description

32

OE

31

A10

30

CE1

29

I/O8

28

I/O7

27

I/O6
I/O5

26

I/O4

25

GND

24

I/O3

23

I/O2

22

I/O1

21

A0

20

A1

19

A2

18

A3

17

A0 to A15
I/O1 to I/O8
CE1, CE2
WE
OE
VCC
GND
NC

32

OE

31

A10

30

CE1

29

I/O8

28

I/O7

27

I/O6
I/O5

26

I/O4

25

GND

24

I/O3

23

I/O2

22

I/O1

21

A0

20

A1

19

A2

18

A3

17

Address input
Data input output
Chip enable 1, 2 input
Write enable input
Output enable input
Power supply
Ground
No connection

Absolute Maximum Ratings (Ta = 25°C, GND = 0V)

Item Symbol Rating Unit
Supply voltage
Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Storage temperature
Soldering temperature · time

∗

1

VIN, VI/O = –3.0V Min. for pulse width less than 50ns.

VCC
VIN
VI/O
PD
Topr
Tstg
Tsolder

–0.5 to +4.6
–0.5∗1to VCC + 0.5
–0.5∗1to VCC + 0.5

0.7

–25 to +85

–55 to +150

235 · 10

V
V
V

W
°C
°C

°C · s

Truth Table

CE1 CE2 OE WE

H

×

×

×

×

L

×

×

L

H

H

H

Mode I/O pin VCC Current

Not selected
Not selected
Output disable

High Z
High Z
High Z

ISB1, ISB2
ISB1, ISB2
ICC1, ICC2, ICC3

L

H

L

H

×: “H” or “L”

L

H

Read

×

L

Write

Data out
Data in

ICC1, ICC2, ICC3
ICC1, ICC2, ICC3

– 2 –

CXK5T8512TM/TN

DC Recommended Operating Conditions (Ta = –25 to +85°C, GND = 0V)

Item

Supply voltage
Input high voltage
Input low voltage

∗1

VIL = –3.0V Min. for pulse width less than 50ns.

Electrical Characteristics

• DC Characteristics

Item Symbol Min.

Input leakage current

Output leakage current

Operating power supply
current

Average operating current

Symbol

VCC
VIH
VIL

ILI

ILO

ICC1

ICC2

ICC3

Min.

2.7

2.4

∗1

–0.3

VIN = GND to VCC
CE1 = VIH or CE2 = VIL or

OE = VIH or WE = VIL
VI/O = GND to VCC

CE1 = VIL, CE2 = VIH
VIN = VIH or VIL
IOUT = 0mA

Min. cycle
duty = 100%
IOUT = 0mA

Cycle time 1µs
duty = 100%
IOUT = 0mA
CE1 ≤ 0.2V
CE2 ≥ Vcc – 0.2V
VIL ≤ 0.2V
VIH ≥ Vcc – 0.2V

VCC = 2.7 to 3.6V VCC = 3.3V ± 0.3V

Typ. Max.

3.3
—
—

3.6

VCC + 0.3

0.4

(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)

10LLX

12LLX

Min. Typ. Max.

3.0

2.2

–0.3

∗1

3.3
—
—

–1

–1

—

—
—

—510

Typ.

—

—

25
25

VCC + 0.3

∗1

1

∗2

3.6

0.6

Max. UnitTest conditions

+1

+1

3

35
35

Unit

V

µA

µA

mA

∗3

mA

mA

CE2 ≤ 0.2V

Standby current

Output high voltage
Output low voltage

∗1

VCC = 3.3V, Ta = 25°C

∗2

ICC2 = 30mA for 3.3V operation (VCC = 3.3V ± 0.3V)

∗3

ICC2 = 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)

ISB1

ISB2
VOH
VOL

CE1 ≥ Vcc – 0.2V

or

{

CE2 ≥ Vcc – 0.2V

CE1 = VIH or CE2 = VIL

IOH = –2.0mA
IOL = 2.0mA

– 3 –

–25 to +85°C
–25 to +70°C
+25°C

—
—
—
—

2.4
—

—
—

0.24

0.12
—
—

14

7

—

1.4
—

0.4

µA

mA

V
V