Sony CXK5T8257BYM, CXK5T8257BTM, CXK5T8257BM-12LLX, CXK5T8257BM-10LLX Datasheet

CXK5T8257BTM/BYM/BM-10LLX/12LLX

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32768-word × 8-bit High Speed CMOS Static RAM

Description

The CXK5T8257BTM/BYM/BM is 262,144 bits high
speed CMOS static RAM organized as 32768-words
by 8 bits.

Special feature are low power consumption and
high speed.

The CXK5T8257BTM/BYM/BM is a suitable RAM
for portable equipment with battery back up.

Features

• Extended operating temperature range: –25 to +85°C

• Wide supply voltage range operation: 2.7 to 3.6V

• Fast access time: (Access time)

3.0V operation -10LLX 100ns (Max.)

-12LLX 120ns (Max.)

3.3V operation -10LLX 85ns (Max.)

-12LLX 100ns (Max.)

• Low standby current: 7.0µA (Max.)

• Low power data retention: 2.0V (Min.)

• Available in many packages

CXK5T8257BTM/BYM

8mm × 13.4mm 28 pin TSOP Package

CXK5T8257BM

450mil 28 pin SOP Package

Function

32768-word × 8 bit static RAM

CXK5T8257BTM

28 pin TSOP (Plastic)

28 pin SOP (Plastic)

Block Diagram

A14
A13
A12
A11

A9
A8
A7
A6

A5

Buffer

CXK5T8257BM

Preliminary

CXK5T8257BYM

28 pin TSOP (Plastic)

Row

Decoder

Memory

Matrix

512 × 512

VCC

GND

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

A10

A4
A3
A2
A1

A0

OE

WE

CE

Buffer

Buffer

I/O Gate

Column

Decoder

I/O Buffer

I/O1

– 1 –

I/O8

PE96509-ST

CXK5T8257BTM/BYM/BM

Pin DescriptionPin Configuration (Top View)

OE

A11

A13

WE

V
A14
A12

A12
A14
V

WE

A13

A11

OE

22
23

A9

24

A8

25
26
27

CC

28

1
2

A7

3

A6

4

A5

5

A4

6

A3

7

A3

7

A4

6

A5

5

A6

4

A7

3
2
1

CC

28
27
26

A8

25

A9

24
23
22

CXK5T8257BTM

(Standard Pinout)

CXK5T8257BYM

(Standard Pinout)

A10

21

CE

20

I/O8

19

I/O7

18

I/O6

17

I/O5

16

I/O4

15

GND

14

I/O3

13

I/O2

12

I/O1

11

A0

10

A1

9

A2

8

A2

8

A1

9

A0

10

I/O1

11

I/O2

12

I/O3

13

GND

14

I/O4

15

I/O5

16

I/O6

17

I/O7

18

I/O8

19

CE

20

A10

21

A14
A12

I/O1
I/O2
I/O3

GND

1
2

A7

3

A6

4

A5

5

A4

6

A3

7

A2

8

A1

9

A0

10
11
12
13
14

28
27
26
25
24
23
22
21
20
19
18
17
16
15

CXK5T8257BM

Absolute Maximum Ratings (Ta = 25°C, GND = 0V)

Item Symbol Rating Unit

Supply voltage

VCC

–0.5 to +4.6

V

Symbol Description

V

CC

WE

A0 to A14

A13
A8

I/O1 to I/O8

A9

CE

A11
OE

WE

A10
CE

OE

I/O8
I/O7

VCC

I/O6
I/O5

GND

I/O4

Address input
Data input/output
Chip enable input
Write enable input
Output enable input
Power supply
Ground

Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Storage temperature
Soldering temperature · time

∗1

VIN, VI/O = –3.0V Min. for pulse width less than 50ns.

VIN
VI/O
PD
Topr
Tstg
Tsolder

–0.5∗1to VCC + 0.5
–0.5∗1to VCC + 0.5

0.7

–25 to +85

–55 to +150

235 · 10

V
V

W
°C
°C

°C · s

Truth Table

CE OE WE Mode I/O1 to I/O8 VCC Current

H

×

×

Not selected

L

H

H

Output disable

L

L

H

Read

L

×

L

Write

High Z
High Z
Data out
Data in

ISB1, ISB2
ICC1, ICC2
ICC1, ICC2
ICC1, ICC2

×: "H" or "L"

– 2 –

CXK5T8257BTM/BYM/BM

DC Recommended Operating Conditions (Ta = –25 to +85°C, GND = 0V)

Item

Supply voltage
Input high voltage
Input low voltage

∗1

VIL=–3.0V Min. for pulse width less than 50ns.

Symbol

VCC
VIH
VIL

VCC = 2.7 to 3.6V VCC = 3.3V ± 0.3V

Min.

2.7

2.4

–0.3

∗1

Typ. Max.

3.3
—
—

3.6

VCC + 0.3

0.4

Min. Typ. Max.

3.0

2.2

∗1

–0.3

3.3
—
—

3.6

VCC + 0.3

0.6

Unit

V

Electrical Characteristics

• DC characteristics (VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)

Item Symbol Test Conditions Min. Typ.∗2Max. Unit

Input leakage current
Output leakage

current

ILI

ILO

VIN = GND to VCC
CE = VIH

OE = VIH or WE = VIL

–0.5

–0.5

—

—

0.5

0.5

µA

VI/O = GND to VCC

Operating power
supply current

Average operating
current

Standby current

Output high
voltage

Output low
voltage

ICC1

ICC2

ISB1

ISB2
VOH

VOL

CE = VIL
VIN = VIH or VIL
IOUT = 0mA

Min. cycle
duty = 100%, IOUT = 0mA

CE ≥ VCC – 0.2V

CE = VIH
IOH = –2mA

IOL = 2.0mA

10LLX
12LLX
–25 to +85°C

–25 to +70°C
+25°C

—

—
—

—
—

—
—

2.4

—

0.9

∗3

18

18
—
—

0.12

0.06
—

—

35

7.0

3.5

0.7

0.4

2

mA

∗4

35

µA

—

mA

—

V

∗2

VCC = 3.3V, Ta = 25°C

∗3

ICC2 = 21mA for 3.3V operation (VCC = 3.3V ± 0.3V)

∗4

ICC3 = 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)

– 3 –