Sony CXK5T81000AYN-12LLX, CXK5T81000AYN-10LLX, CXK5T81000ATN Datasheet
CXK5T81000ATN/AYN-10LLX/12LLX
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131072-word × 8-bit High Speed CMOS Static RAM
Description
The CXK5T81000ATN/AYN is a high speed
CMOS static RAM organized as 131072-words by
8-bits.
Special feature are low power consumption and
high speed.
The CXK5T81000ATN/AYN is a suitable RAM for
portable equipment with battery back up.
Features
• Extended operating temperature range:
–25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time: (Access time)
3.0V operation -10LLX 100ns (Max.)
-12LLX 120ns (Max.)
3.3V operation -10LLX 85ns (Max.)
-12LLX 100ns (Max.)
• Low standby current: 28µA (Max.)
• Low data retention current: 24µA (Max.)
• Low power data retention: 2.0V (Min.)
• Package 8mm × 13.4mm 32 pin TSOP package
Function
131072-word × 8-bit static RAM
Structure
Silicon gate CMOS IC
CXK5T81000ATN
32 pin TSOP (Plastic)
Block Diagram
A10
A11
A9
A8
A13
A15
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
OE
WE
CE1
CE2
Buffer
Buffer
Buffer
Preliminary
CXK5T81000AYN
32 pin TSOP (Plastic)
Row
Decoder
Memory
Matrix
1024 × 1024
I/O Gate
Column
Decoder
I/O Buffer
I/O1 I/O8
V
CC
GND
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
PE96726-PS
CXK5T81000ATN/AYN
Pin Configuration (Top View)
A11
A13
CE2
A15
A16
A14
A12
CE2
WE
V
NC
A12
A14
A16
V
A15
WE
A13
A11
1
2
A9
3
A8
4
5
6
7
CC
8
9
10
11
12
A7
13
A6
14
15
A5
16
A4
16
A4
A5
15
A6
14
A7
13
12
11
10
9
NC
8
CC
7
6
5
4
A8
3
2
A9
1
CXK5T81000ATN
(Standard Pinout)
CXK5T81000AYN
(Mirror Image Pinout)
32
OE
31
A10
30
CE1
29
I/O8
I/O7
28
I/O6
27
26
I/O5
25
I/O4
24
GND
23
I/O3
I/O2
22
I/O1
21
A0
20
A1
19
A2
18
17
A3
A3
17
A2
18
A1
19
A0
20
I/O1
21
I/O2
22
I/O3
23
GND
24
I/O4
25
I/O5
26
I/O6
27
I/O7
28
29
I/O8
30
CE1
31
A10
32
OE
Absolute Maximum Ratings (Ta = 25°C, GND = 0V)
Item Symbol Rating Unit
Supply voltage
VCC
–0.5 to +4.6
V
Pin Description
Symbol Description
A0 to A16
I/O1 to I/O8
CE1, CE2
WE
OE
VCC
GND
NC
Address input
Data input output
Chip enable 1, 2 input
Write enable input
Output enable input
Power supply
Ground
No connection
Input voltage
Input and output voltage
Allowable power dissipation
Operating temperature
Storage temperature
Soldering temperature · time
∗1
VIN, VI/O = –3.0V Min. for pulse width less than 50ns.
VIN
VI/O
PD
Topr
Tstg
Tsolder
–0.5∗1to VCC + 0.5
–0.5∗1to VCC + 0.5
0.7
–25 to +85
–55 to +150
235 · 10
V
V
W
°C
°C
°C · s
Truth Table
CE1 CE2 OE
H
×
×
×
L
×
L
H
H
L
H
L
L
H
×
WE
×
×
H
H
L
Mode I/O pin VCC Current
Not selected
Not selected
Output disable
Read
Write
High Z
High Z
High Z
Data out
Data in
ISB1, ISB2
ISB1, ISB2
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
ICC1, ICC2, ICC3
× : “H” or “L”
DC Recommended Operating Conditions (Ta = –25 to +85°C, GND = 0V)
Item
Symbol
Min.
Supply voltage
Input high voltage
Input low voltage
∗2
VIL = –3.0V Min. for pulse width less than 50ns.
VCC
VIH
VIL
2.7
2.4
–0.3
∗2
VCC = 2.7 to 3.6V VCC = 3.3V ± 0.3V
Typ. Max.
3.3
—
—
3.6
VCC + 0.3
0.4
Min. Typ. Max.
3.0
2.2
–0.3
∗2
3.3
—
—
VCC + 0.3
– 2 –
Unit
3.6
V
0.6
Electrical Characteristics
CXK5T81000ATN/AYN
• DC Characteristics
Item Symbol Min.
Input leakage current
Output leakage current
Operating power supply
current
Average operating current
Standby current
Output high voltage
ILI
ILO
ICC1
ICC2
ICC3
ISB1
ISB2
VOH
(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)
VIN = GND to VCC
CE1 = VIH or CE2 = VIL or
OE = VIH or WE = VIL
VI/O = GND to VCC
CE1 = VIL, CE2 = VIH
VIN = VIH or VIL
IOUT = 0mA
Min. cycle
duty = 100%
IOUT = 0mA
Cycle time 1µs
duty = 100%
IOUT = 0mA
CE1 ≤ 0.2V
CE2 ≥ Vcc – 0.2V
VIL ≤ 0.2V
VIH ≥ Vcc – 0.2V
CE2 ≤ 0.2V
CE1 ≥ Vcc – 0.2V
or
{
CE2 ≥ Vcc – 0.2V
CE1 = VIH or CE2 = VIL
IOH = –2.0mA
–25 to +85°C
–25 to +70°C
+25°C
10LLX
12LLX
∗1
Typ.
–1
–1
—
—
—
—510
—
—
—
—
2.4
—
—
1
25
25
—
—
0.48
0.12
—
∗2
Max. UnitTest conditions
+1
+1
3
35
35
28
14
—
1.4
—
∗3
µA
µA
mA
mA
mA
µA
mA
V
Output low voltage
∗1
VCC = 3.3V, Ta = 25°C
∗2
ICC2 = 30mA for 3.3V operation (VCC = 3.3V ± 0.3V)
∗3
ICC2 = 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)
I/O capacitance (Ta = 25°C, f = 1MHz)
Item Symbol Test conditions Min. Typ. Max. Unit
Input capacitance
I/O capacitance
Note) This parameter is sampled and is not 100% tested.
VOL
CIN
CI/O
IOL = 2.0mA
VIN = 0V
VI/O = 0V
—
—
—
—
8
10
—
pF
pF
—
0.4
V
– 3 –
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