Sony CXK582000YM, CXK582000TM, CXK582000M-85LL, CXK582000M-10LL Datasheet

CXK582000TM/YM/M-85LL/10LL

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262144-word × 8-bit High Speed CMOS Static RAM

Description

The CXK582000TM/YM/M is a high speed CMOS

static RAM organized as 262144-words by 8 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption and high speed and board package line-up.

The CXK582000TM/YM/M is a suitable RAM for portable equipment with battery back up.

Features

• Fast access time (Access time)

-85LL 85ns (Max.)

-10LL 100ns (Max.)

• Low standby current 40µA (Max.)

• Low data retention current 24µA (Max.)

• Single +5V supply: 4.5V to 5.5V.

• Low voltage date retention : 2.0V (Min.)

• Broad package line-up

CXK582000TM/YM 8mm × 20mm 32 pin

TSOP Package

CXK582000M 525mil 32 pin

SOP Package

Function

262144 word x 8 bit static RAM

CXK582000TM

32 pin TSOP (PIastic)

32 pin SOP (PIastic)

Block Diagram

A10 A11

A9

A8 A13 A15 A17 A16 A14 A12

A7

Buffer

Preliminary

32 pin TSOP (PIastic)

CXK582000M

Row

Decoder

CXK582000YM

Memory

Matrix

2048 × 1024

VCC

GND

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

A6

A5

A4

A3

A2

A1

A0

OE

WE

CE1 CE2

Buffer

I /O Gate

Column

Decoder

I /O Buffer

I/O1

I/O8

– 1 –

E94234-ST

CXK582000TM/YM/M

Pin Configuration (Top View)

1

A11

2

A9

3

A8

A13

4

WE

5

CE2

6

A15

Vcc A17 A16 A14 A12

A12 A14 A16 A17

Vcc A15 CE2

WE A13

A11

7 8

9 10 11 12 13

A7

14

A6 A5

15 16

A4

16

A4

15

A5

14

A6

13

A7

12 11 10

9

8

7

6

5

4

A8

3

A9

2

1

CXK582000TM

(Standard Pinout)

CXK582000YM

(Mirror image Pinout)

Pin Description

32

OE

31

A10

30

CE1

29

I/O8

28

I/O7

27

I/O6

26

I/O5 I/O4

25

GND

24

I/O3

23

I/O2

22

I/O1

21

A0

20 19

A1

18

A2 A3

17

A3

18

A2

19

A1

20

A0

21

I/O1

22

I/O2

23

I/O3

24

GND

25

I/O4

26

I/O5 I/O6

27

I/O7

28

I/O8

29

CE1

30

A10

31

OE

32

A17 A16 A14 A12

A7 A6 A5 A4 A3 A2 A1

A0 I/O1 I/O2 I/O3

GND

1 2 3 4 5 6 7 8

9 10 11 12 13 14 15 16

CXK582000M

32

Vcc

31

A15

30

CE2

29

WE

28

A13

27

A8

26

A9

25

A11

24

OE

23

A10

22

CE1

21

I/O8

20

I/O7

19

I/O6

18

I/O5

17

I/O4

Symbol Description A0 to A17 I/O1 to I/O8 CE1, CE2 WE OE VCC GND

Address input Data input output Chip enable 1, 2 input Write enable input Output enable input Power supply Ground

Absolute Maximum Ratings (Ta = 25°C, GND = 0V)

Item Symbol Rating Unit Supply voltage Input voltage Input and output voltage Allowable power dissipation Operating temperature Storage temperature Soldering temperature · time

VCC VIN VI/O PD Topr Tstg Tsolder

–0.5 to +7.0 –0.5∗ to VCC + 0.5 –0.5∗ to VCC + 0.5

0.7

0 to +70

–55 to +150

235 · 10

V V V

W °C °C

°C · s

∗ VIN, VI/O = –3.0V Min. for pulse width less than 50ns.

Truth Table

CE1 CE2 OE WE

H

×

L

×

L

H

Mode I/O pin VCC Current

Not selected Not selected Output disable

High Z High Z High Z

ISB1, ISB2 ISB1, ISB2 ICC1, ICC2, ICC3

L

H

L

H

×: “H” or “L”

L

H

Read

×

L

Write

Data out Data in

ICC1, ICC2, ICC3 ICC1, ICC2, ICC3

– 2 –

DC Recommended Operating Conditions (Ta = 0 to +70°C, GND = 0V)

Item Symbol Min. Typ. Max. Unit

CXK582000TM/YM/M

ILI

ILO

ICC1

ICC2

ICC3

VCC VIH VIL

4.5

2.2

–0.3∗

VIN = GND to VCC CE1 = VIH or CE2 = VIL or

OE = VIH or WE = VIL VI/O = GND to VCC

CE1 = VIL, CE2 = VIH VIN = VIH or VIL IOUT = 0mA

Min. cycle duty = 100% IOUT = 0mA

Cycle time 1µs duty = 100% IOUT = 0mA CE1 ≤ 0.2V CE2 ≥ Vcc – 0.2V VIL ≤ 0.2V VIH ≥ Vcc – 0.2V

Supply voltage Input high voltage Input low voltage

∗ VIL = –3.0V Min. for pulse width less than 50ns.

Electrical Characteristics

• DC Characteristics

Item Symbol Min.

Input leakage current

Output leakage current

Operating power supply current

Average operating current

5.0 — —

5.5

VCC + 0.3

0.8

(VCC = 5V ± 10%, GND = 0V, Ta = 0 to +70°C)

-85LLX

-10LLX

V V V

Typ.∗

–1

—

— —

—12

—

7

45 40

Max. UnitTest conditions

+1

15

80 70

24

µA

mA

Standby current

Output high voltage Output low voltage

∗ VCC = 5V, Ta = 25°C

ISB1

ISB2 VOH

VOL

CE2 ≤ 0.2V

CE1 ≥ Vcc – 0.2V

or

{

CE2 ≥ Vcc – 0.2V

CE1 = VIH or CE2 = VIL

IOH = –1.0mA IOL = 1.0mA

– 3 –

0 to +70°C 0 to +40°C +25°C

— — — —

2.4 —

— —

1.4

0.6 — —

40

8 4 3

—

0.4

µA

mA

V V

I/O capacitance (Ta = 25°C, f = 1MHz)

Item Symbol Test conditons Min. Typ. Max. Unit

CXK582000TM/YM/M

Input capacitance I/O capacitance

CIN CI/O

VIN = 0V VI/O = 0V

— —

Note) This parameter is sampled and is not 100% tested.

AC Characteristics

• AC test conditions (VCC = 5V ± 10%, Ta = 0 to +70°C)

Item Conditions

Input pulse high level Input pulse low level Input rise time Input fall time Input and output reference level Output load conditions

VIH = 2.2V VIL = 0.8V

tr = 5ns tf = 5ns

1.5V CL∗ = 100pF, 1TTL

∗ CL includes scope and jig capacitances.

— —

7 8

pF pF

TTL

L

C

– 4 –