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CXG1134EN
High P ower SPDT Switch with Logic Control
Description
The CXG1134EN is a high power and high Isolation
SPDT switch MMIC. This IC can be used in wireless
communication systems. The CXG1134EN can be
operated by one CMOS control line. The Sony GaAs
J-FET process is used f or low insertion loss and on-chip
logic circuit.
Features
• Low insertion loss: 0.25dB @900MHz,
0.35dB @1.9GHz
• High linearity: IIP3 (typ.) = 70dBm
• 1 CMOS compatible control line
• Small package size: 10-pin VSON
Applications
• Cellular handsets
• PDC, CDMA
10 pin VSON (Plastic)
Structure
GaAs J-FET MMIC
Absolute Maximum Ratings (Ta = 25°C)
• Bias voltage VDD 7V
• Control voltage Vctl 5 V
• Operating temperature Topr –35 to +85 ° C
• Storage temperature Tstg –65 to +150 °C
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
E02330-PS
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Block Diagram and Recommended Circuit
Rctl (1kΩ )
CTL
Cbypass
(100pF)
GND
6
7
GND (recommended)
5
4
Cbypass
(100pF)
CRF (100pF)
V
DD
CXG1134EN
RF1
RF2
GND
GND
CRF (100pF)
10
8
9
F3 F4
GND (recommended)
F2F1
3
2
1
GND
GND
CRF (100pF)
When using this IC, the following external parts should be used:
Rctl: This resistor is used to improve ESD performance. 1kΩ is recommended.
CRF: This capacitor is used for RF de-coupling and must be used for all applications.
100pF is recommended.
Cbypass: This capacitor is used for DC line filtering. 100pF is recommended.
T ruth T able
F4
F3
F2
On Pass
RF1 – RF2
CTL
F1
OFF
OFF
ON
H
ON
RF3
ON
RF1 – RF3
OFF
L
ON
DC Bias Condition (Ta = 25°C)
Item
Vctl (H)
Vctl (L)
VDD
Min.
2.2
0
2.7
Typ.
3.0
—
3.0
Max.
3.6
0.4
3.6
Unit
V
V
V
– 2 –
OFF