Sony CXG1130AER Datasheet
Triple Low Noise Amplifier/Dual Mixer
Description
The CXG1130AER is a triple low noise amplifier/
dual mixer. This IC is designed using the Sony’s GaAs
J-FET process.
Features
• Single 3V power supply operation
• 2-pin control by the on-chip logic circuit
• High gain: Gp = 16.5dB (LNA typ.)
Gc = 10dB (MIX typ.)
• Low noise figure: NF = 1.5 to 1.6dB (LNA typ.)
NF = 4.5dB (MIX typ.)
• Low LO input power operation
• 24-pin VQFN small package
Applications
800MHz/1.5GHz Japan digital cellular phones (PDC)
Structure
GaAs J-FET MMIC
Absolute Maximum Ratings (Ta = 25°C)
• Supply voltage VDD 4.5 V
• Input power PIN +13 dBm
• Current consumption IDD 15 mA
• Operating temperature Topr –35 to +85 °C
• Storage temperature Tstg –65 to +150 °C
Recommended Operating Conditions
• Supply voltage VDD 2.7 to 3.3 V
• Control voltage VCTL (H) 2.4 to 3.3 V
CXG1130AER
24 pin VQFN (Plastic)
VCTL (L) 0 to 0.3 V
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
E01827-PS
Block Diagram and Pin Configuration
RFin1
CAP1
CAP2
RFin2
CAP3
12 11 10 9 8 7
CXG1130AER
RFin3
RFout1
GND
CTL1
MIXin1
GND
V
DD
_LO1
Recommended Evaluation Circuit
V
DD
_LNA800MHz-band
1nF
4.7kΩ
2.7nH 22nH
1nF
10nH
18nH
33nH
LNAout_810/885MHz
MIXin_810/885MHz
DD
_LO680/755MHz
V
LOin_680/755MHz
100pF
CTL1
10nH
13
14
15
16
17
18
6
5
4
3
2
1
RFout2
GND
CTL2
GND
OPT
MIXin2
19 20 21 22 23 24
LOin1
GND
LOin2
IFout
GND
_LO2
DD
V
LNAin_885MHz LNAin_810MHz LNAin_1490MHz
2.7nH
27nH
100pF
22pF 12pF
15nH
V
DD
22nH
8.2nH
12 11 10 9 8 7
6.8nH
13
14
15
16
17
18
6
5
4
3
2
1
8.2nH
19 20 21 22 23 24
39nH
8.2nH
5pF
8.2nH
1nF
_LNA1500MHz-band
1nF
3.9nH
LNAout_1490MHz
100pF
4.7kΩ
CTL2
470kΩ
MIXin_1490MHz
1nH
2.7nH
DD
_LO1360MHz
V
LOin_1360MHz
3.9nH
V
DD
_MIX
– 2 –
150nH
IFout_130MHz
100pF
100nH
1nF
CXG1130AER
Electrical Characteristics
The normalized values are those when the Sony’s recommended evaluation board is used.
800MHz Band Low Noise Amplifier
Conditions: Unless otherwise specified, VDD = 3.0V, VCTL (H) = 3.0V, VCTL (L) = 0V, fRF1 = 885MHz, fRF2 = 810MHz
(Ta = 25°C)
Item
Current
consumption
Control current
Power gain
Noise figure
Input IP3
Isolation
1
∗
Conversion from the IM3 suppression ratio for two-wave input: fRFoffset = 100kHz, PRF = –30dBm.
Symbol
IDD
ICTL1
Gp
NF
IIP3
ISO
Path
—
—
RFIN1 → RFOUT1
RFIN2 → RFOUT1
RFIN1 → RFOUT1
RFIN2 → RFOUT1
RFIN1 → RFOUT1
RFIN2 → RFOUT1
RFOUT1 → RFIN1
RFOUT1 → RFIN2
Frequency
—
—
—
—
fRF1
fRF2
fRF1
fRF2
fRF1
fRF2
fRF1
fRF2
VCTL1
H
L
H
L
H
L
H
L
H
L
H
L
H
L
VCTL2
L
L
L
L
L
L
L
L
L
L
L
L
L
L
Min.
—
—
—
–5
14.5
—
—
14.5
—
—
–10
–11
22
18
Typ.
2.0
2.0
60
0
16.5
–20
–25
16.5
1.3
1.5
–6.5
–8
26
22
Max.
2.65
2.65
90
5
18.5
–15
–20
18.5
2.0
2.0
—
—
—
—
Unit
mA
µA
dB
dB
dBm
dB
Measurement
condition
When no
signal
When a
small signal
1
∗
When a
small signal
1.5GHz Band Low Noise Amplifier
Conditions: Unless otherwise specified, VDD = 3.0V, VCTL (H) = 3.0V, VCTL (L) = 0V, fRF3 = 1490MHz
Item
Current
consumption
Symbol
IDD
Path
—
Frequency
—
VCTL1
—
VCTL2
H
Min.
—
Typ.
2.9
Max.
3.7
Measurement
Unit
condition
mA
When no
signal
Control current
Power gain
Noise figure
Input IP3
Isolation
1
∗
Conversion from the IM3 suppression ratio for two-wave input: fRFoffset = 100kHz, PRF = –30dBm.
ICTL2
Gp
NF
IIP3
ISO
—
RFIN3 → RFOUT2
RFIN3 → RFOUT2
RFIN3 → RFOUT2
RFOUT2 → RFIN3
—
fRF3
fRF3
fRF3
fRF3
—
—
—
—
—
H
—
H
14
H
—
H
–9
H
20
90
16
1.6
–6
23
120
18
2.1
—
—
µA
dB
dB
dBm
dB
When a
small signal
1
∗
When a
small signal
– 3 –
(Ta = 25°C)
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