Sony CXG1121TN Datasheet

CXG1121TN

SP4T GSM/GPRS Dual-Band Antenna Switch + Logic

Description

The CXG1121TN is one of a range of low insertion
loss, high power MMIC antenna switches for GSM/
GPRS dual-band application. The low insertion loss
on transmit means increased talk time as the Tx
power amplifier can be operated at a lower output
level. On-chip logic reduces component count and
simplifies PWB layout by allowing direct connection
of the switch to digital base band control lines with
CMOS logic levels.

This switch is an SP4T, one antenna can be routed
to either of the 2 Tx or 2 Rx ports. It requires 3 CMOS
control lines (Tx/Rx, GSM900/1800 and Standby).

The Sony GaAs JFET process is used for low
insetion loss. An evaluation PWB is available.

16 pin TSSOP (Plastic)

Features

• Insertion loss (Tx) 0.5dB typical at 34dBm (GSM900)

• 3 CMOS compatible control lines

• Low second harmonic, –40dBm typical, at 34dBm (GSM900)

• Small package size: 16-pin TSSOP (3.9mm × 4.1mm × 1.2mm)

Applications

• Dual-band handsets using combinations of GSM900/GSM1800/GSM1900

• GPRS class 12 handsets

Structure

GaAs J-FET MMIC

Absolute Maximum Ratings (Ta = 25°C)

• Bias voltage VDD 7V

• Control voltage VCTL 5V

• Operating temperature Topr –20 to +80 °C

GaAs MMICs are ESD sensitive devices. Special handling precautions are required. The IC will be damaged in
the range from 100 to 200V @200pF 0Ω and below 1000V @100pF 1500Ω.

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E01661-PS

Pin Configuration

CXG1121TN

GND

GND

ANT

GND

DD

V

GND

Band Select

Tx/Rx

10

11

12

13

14

15

16

9

8

7

6

5

4

3

2

1

Tx1

GND

Tx2

GND

Rx1

GND

Rx2

STDBY

T ruth T able

On Pass
ANT – Tx1 DCS1800
ANT – Tx2 GSM900
ANT – Rx1 GSM900/DCS1800
ANT – Rx2 GSM900/DCS1800
OFF

Band select

H

L
L

H

—

Tx (H) / Rx (L)

H
H

L
L

—

Standby

H
H
H
H

L

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CXG1121TN

Electrical characteristics (Ta = 25°C)

Item

Insertion loss

Isolation

VSWR

Harmonics

∗

P1dB compression input
power

Control current

Symbol

IL

ISO

VSWR
2fo
3fo
2fo
3fo

P1dB

ICTL

Port
Tx2 – ANT
Tx1 – ANT
ANT – Rx1
ANT – Rx2
ANT – Tx1
ANT – Tx2
Tx2 – Rx1, Rx2
Tx1 – Rx1, Rx2

GSM Tx – ANT

DCS Tx – ANT

GSM Tx – ANT
DCS Tx – ANT

∗1
∗2
∗3
∗4
∗3
∗4
∗1
∗2

∗1
∗1
∗2
∗2
∗1
∗2

VCTL = 3V

Min.Condition

Typ.

0.5

0.6

0.55

0.7

Max.

0.7

0.8

0.75

0.9
20
17
20
20

Unit

dB
dB
dB
dB
dB
dB
dB
dB

1.2

–40
–34
–40
–34

36
36
80

–36
–30
–36
–30

120

dBm
dBm
dBm
dBm
dBm
dBm

µA
Supply current
Leakage current

IDD
IIK

STBY = H
STBY = L

0.5
90

1.0

Electrical characteristics are measured with all RF ports terminated in 50Ω.

∗

Harmonics measured with Tx inputs harmonically matched. The use of harmonic matching is recommended
to ensure optimum performance.

1

∗

Power incident on GSM Tx, Pin = 34dBm, 880 to 915MHz, VDD = 5.0V, GSM Tx enabled

2

∗

Power incident on DCS Tx, Pin = 32dBm, 1710 to 1785MHz, VDD = 5.0V, DCS Tx enabled

3

∗

Power incident on ANT, Pin = 10dBm, 925 to 960MHz, VDD = 5.0V, GSM Rx enabled

4

∗

Power incident on ANT, Pin = 10dBm, 1805 to 1880MHz, VDD = 5.0V, DCS Rx enabled

Supply V oltage V alue (VDD)

Mode

GSM/DCS Tx
GSM/DCS Rx

Min.

4.5

2.7

Typ.

5
3

Max.

5.7
4

Unit

V
V

CMOS Logic Value

mA

µA

High
Low

Logic

Min.

2.4
0

Typ.

2.8

Max.

3.2

0.4

Unit

V
V

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