Sony CXG1111EN Datasheet

800MHz Band Receive Mixer

Description

The CXG1111EN is a mixer MMIC for the Japan
CDMA cellular. This IC is designed using the Sony’s
GaAs J-FET process.

Features

• High conversion gain: Gc = 13.0dB (Typ.)

• Low noise figure: NF = 4.5dB (Typ.)

• Low distortion: IIP3 = +2.5dBm (Typ.)

• Small package: 10-pin VSON

Applications

J-CDMA, PDC 800MHz and others

Structure

GaAs J-FET MMIC

CXG1111EN

10 pin VSON (Plastic)

Pin Configuration

6

RFIN

7

GND

8

OPT

NC

5
4

GND

3

GND

Absolute Maximum Ratings (Ta = 25°C)

• Supply voltage VDD 4.5 V

• Input power PIN +5 dBm

• Operating temperature Topr –35 to +85 °C

• Storage temperature Tstg –65 to +150 °C

Recommended Operating Condition

Supply voltage VDD 2.7 to 3.3 V

Block Diagram

RF

IN

6

LO

IN

10

IF

OUT

1

GND

LOIN

10

9

2

V

DD1 (LO AMP)

1

OUT/VDD2 (MIX)

IF

Note on handling

GaAs MMICs are ESD sensitive devices. Special handling precautions are required.

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

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E00925A1Y-PS

Electrical Characteristics

Conditions: VDD = 2.7V, fRF = 850MHz, fLO = 740MHz, PLO = –10dBm

CXG1111EN

(Ta = 25°C)

Item
Current consumption
Conversion gain

Symbol
IDD
GC

Min.

—

11.5

Typ.

7.5
13

Max.

10

14.5

Unit

mA

dB

Condition

When no signal

When a small signal

Noise figure
Input IP3
LO – RF leak level

∗1

Conversion from the IM3 suppression ratio for two-wave input: fRF = 850MHz/850.9MHz and PRF = –25dBm.

NF
IIP3
P

LK

—

0.5

—

4.5

2.5

–20

6

—

–17

dB
dBm
dBm

∗1

—

Recommended Evaluation Circuit

RF

LO

IN

L1

IN

L2

L3

L4

R1

10

6
7
8
9

5
4
3
2
1

L5

C1 C2

L6

VDD (LO AMP)

IF

C4

OUT

L1
L2
L3
L4
L5

18nH
22nH
27nH
33nH
33nH

L6

L7
C1
C2
C3

220nH
220nH
100pF

1000pF

8pF

C3

C4
C5
R1

L7

C5

1000pF
1000pF

27Ω

VDD (MIX)

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