Sony CXG1097EN Datasheet
Low Noise Amplifier with Bypass Switch/Mixer
Description
The CXG1097EN is a dual mode low noise amplifier
with a bypass switch/ mixer MMIC for Japan CDMA
cellular. This IC is designed using the Sony's GaAs
J-FET process.
Features
• Dual mode low noise amplifier with a bypass switch
• High gain
Low noise amplifier high current mode:
Gp = 14.5dB (Typ.)
Mixer: Gc = 12.0dB (Typ.)
• Low noise
Low noise amplifier high current mode:
NF = 1.6dB (Typ.)
Mixer: NF = 4.5dB (Typ.)
• Low distortion
Low noise amplifier high current mode:
IIP3 = +4.5dBm (Typ.)
Mixer: IIP3 = +3dBm (Typ.)
• Small package 16-pin VSON
Applications
Japan CDMA cellular (J-CDMA)
Element Structure
GaAs J-FET MMIC
Absolute Maximum Ratings (Ta = 25°C)
• Supply voltage VDD 4.5 V
• Input power PIN +5 dBm
• Operating temperature
Topr –35 to +85 °C
• Storage temperature
Tstg –65 to +150 °C
Recommended Operating Conditions
• Supply voltage VDD 2.7 to 3.3 V
• Control voltage VCTL (H) 2.4 to 3.3 V
VCTL (L) 0 to 0.3 V
– 1 –
E99Z08A05-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
CXG1097EN
16 pin VSON (Plastic)
Block Diagram
RFOUT
SW RFIN
LNA RFOUT
MIX RFIN
LOIN
RFIN
SW RFOUT
LNA RFIN
IFOUT
8
9
1
3
5
7
10
12
16
Pin Configuration
IFOUT/VDD (MIX)
RF
IN
SW RFOUT
CTL1
LNA RF
IN
CAP
GND
V
DD (LO AMP)
LO
IN
RFOUT
SW RFIN
LNA RFOUT/VDD (LNA, Logic)
CTL2
GND
MIX RF
IN
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
For the availability of this product, please contact the sales office.
– 2 –
CXG1097EN
Electrical Characteristics
Conditions: VDD = 2.7V, VCTL (H) = 2.7V, VCTL (L) = 0V, fRF = 850MHz, fLO = 740MHz, PLO = –10dBm,
unless otherwise specified (Ta = 25°C)
Block
Low noise
amplifier block
Mixer block
Control current
for High state
H
L
L
H
H
L
H
H
H
H
L
H
H
H
H
L
H
L or H
L
H
L or H
L
H
L
H
L or H
L
H
L
H
ICTLH
IDDSW
IDDL
IDDH
GPSW
GPL
GPH
NFL
NFH
IIP3SW
IIP3L
IIP3H
ISO
IDD
GC
NF
IIP3
PLK
—
—
—
—
–3.7
11
13
—
—
25
–3
2
20
—
10.5
—
0.5
—
50
0.3
3.8
10.5
–3.2
12.5
14.5
1.8
1.6
35
0
4.5
24
7.5
12
4.5
3
–30
70
0.6
5
17
–2.7
14
16
2.3
2.1
—
—
—
—
10
13.5
6
—
–25
µA
mA
dB
dB
dBm
dB
mA
dB
dB
dBm
dBm
When no signal
When a small signal
∗1
When a small signal
When no signal
When a small signal
∗1
—
Current
consumption
Power gain
Noise figure
Input IP3
Isolation
Current consumption
Conversion gain
Noise figure
Input IP3
LO to RF leak level
Item VCTL1 VCTL2 Symbol Min. Typ. Max. Unit Measurement condition
∗1
fRF=850MHz/850.9MHz, PRF = –25dBm (low noise amplifier mode, mixer)/0dBm (bypass switch mode)
Conversion by the IM3 suppression ratio for two-wave input.
Note) The values shown above are the specified values on the Sony's recommended evaluation board.
– 3 –
CXG1097EN
Recommended Evaluation Circuit
C3
C1
C4
C2
L2
L3
L6 L4
L7
L5
C6
C5
IFOUT
VDD (MIX)
RF
IN
CTL1
V
DD (LO AMP)
LO
IN
RFOUT
VDD (LNA, Logic)
CTL2
MIX RF
IN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
L1
L8
L9
L10
C9
C8
C10
C7
L1
L2
L3
L4
L5
L6
L7
L8
L9
L10
18nH
18nH
33nH
10nH
15nH
27nH
33nH
33nH
220nH
180nH
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
100pF
100pF
100pF
1000pF
1000pF
100pF
1000pF
6pF
1000pF
1000pF
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