—1—
E98Y52-TE
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 °C)
• Bias voltage VDD 7V
•Control voltage Vctl 5 V
• Operating temperature Topr –35 to +85 °C
• Storage temperature Tstg –65 to +150 °C
Description
The CXG1064ATN is a high power antenna switch
MMIC. The CXG1064ATN is suited to connect
Tx/Rx to one of 4 antennas in cellular handset such
as PDC.
The CXG1064ATN has the integrated control logic
and can be operated with CMOS input.
This IC is designed using the Sony’s GaAs J-FET
process which enable the CXG1064ATN to be
operated with low voltage.
Features
• Low insertion loss :
0.35 dB (Typ.) @900 MHz, 0.45 dB (Typ.) @1.5 GHz
• Small package : TSSOP-16 pin
• High power handling : P1dB : 37 dBm
• CMOS compatible input control
• Low bias voltage : VDD=3.0 V
Applications
2 × 4 antenna switch for digital cellular telephones
such as PDC handsets.
Structure
GaAs J-FET MMIC
High Power 2 × 4 Antenna Switch MMIC with Integrated Control Logic
16 pin TSSOP (Plastic)
CXG1064ATN
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
—2—
CXG1064ATN
Block Diagram
RF3
(Tx)
RF4
(Ant/Ext.1)
RF6
(Diversity 1)
RF5
(Rx)
F1
F2
F3
F6
RF2
(Ant/Ext.2)
RF1
(Diversity 2)
F5
F7
F4
F8
Package Outline/Pin Configuration
16pin TSSOP (PLASTIC)
RF4 RF3
GND GND
RF5 RF2
GND GND
RF6 RF1
GND GND
VDD CTLC
CTLA CTLB
16 1
RF4
GND
GND
RF5
RF6
GND
V
DD
CTLA
CXG1064ATN
1
2
3
4
5
6
7
8
12
13
14
15
16
11
10
9
100pF100pF
100pF 100pF
100pF
1kΩ
1kΩ1kΩ
100pF
100pF
RF1
CTLC
CTLB
RF2
RF3
GND
GND
GND
100pF
100pF
100pF
L1
L1
L1
L1
L1
L1
∗ DC blocking capacitors (CRF) are needed.
∗ Recommended to use bypass capacitors (Cbypass).
∗ Recommended to use control resistors (RCTL), when it is necessary to improve the electrostatic discharge
strength (ESD).
—3—
CXG1064ATN
Truth Table
Control
CTLA CTLB CTLC
H L L
H L H
L L L
L L H
L H L
L H H
ON
RF3 → RF2
RF3 → RF4
RF5 → RF2
RF5 → RF4
RF5 → RF6
RF5 → RF1
F1
OFF
ON
ON
OFF
OFF
OFF
F2
ON
OFF
OFF
ON
OFF
OFF
F3
OFF
ON
ON
OFF
OFF
OFF
F4
ON
OFF
OFF
ON
OFF
OFF
F5
OFF
OFF
OFF
OFF
ON
OFF
F6
OFF
OFF
OFF
OFF
OFF
ON
F7
ON
ON
ON
ON
OFF
ON
F8
ON
ON
ON
ON
ON
OFF
DC Bias Condition (Ta=25 °C)
Parameter
Vctl (H) A to C
Vctl (L) A to C
VDD
Min. Typ. Max. Unit.
2.4 3.6 V
0 0.8 V
2.6 4.5 V