Sony CXA1753M Datasheet
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E93537A79-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 °C)
• Supply voltage VCC 12 V
• Operating temperature Topr –20 to +75 °C
• Storage temperature Tstg –40 to +85 °C
• Allowable power dissipation
PD 200 mW
Operating Conditions
Supply voltage VCC 2.8 to 11.0 V
Description
The CXA1753M is a photo IC developed as a
photodetector for the optical pickup of CD players.
It has a built-in I-V amplifier, and features low
output impedance for stable output.
• Focus servo : astigmatic method
• Tracking servo : three-spot method
Features
• I-V amplifier (current-voltage conversion circuit)
• Compact transparent molded package (SOP)
Identical to the shape of conventional photodiodes
Applications
Optical pickup of CD players
Structure
Bipolar silicon monolithic IC
I-V Photo IC for CD Player
PD-S-14
CXA1753M
For the availability of this product, please contact the sales office.
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CXA1753M
Electrical and Optical Characteristics I (VCC=3.0 V, VC=1.5 V, Ta=25 °C)
Item
Current consumption
Output offset voltage (A-F)
Output offset voltage difference
Output voltage (A-D)
Output voltage (E, F)
Maximum output voltage (A-D)
Maximum output voltage (E, F)
Frequency response (A-D)
Frequency response (E, F)
Symbol
ICC
Voff
∆Voff
VO
VO
Vomax
Vomax
fC
fC
Conditions
In the dark
In the dark
(A+B) – (C+D) In the dark
(A+D) – (B+C) In the dark
(A+C) – (B+D) In the dark
E–F In the dark
PO=10 µW, λ=780 nm
PO=10 µW, λ=780 nm
PO=100 µW, λ=780 nm
PO=100 µW, λ=780 nm
100 kHz reference, –3 dB
10 kHz reference, –3 dB
Min. Typ. Max. Unit
— 2.0 2.8 mA
–15 0 15 mV
–15 0 15 mV
–15 0 15 mV
–15 0 15 mV
–10 0 10 mV
290 370 450 mV
610 770 930 mV
2.0 2.2 — V
2.5 2.9 — V
2.0 3.0 — MHz
100 400 — kHz
Electrical and Optical Characteristics II (VCC=5.0 V, VC=2.5 V, Ta=25 °C)
Item
Current consumption
Output offset voltage (A-F)
Output offset voltage difference
Output voltage (A-D)
Output voltage (E, F)
Maximum output voltage (A-D)
Maximum output voltage (E, F)
Frequency response (A-D)
Frequency response (E, F)
Symbol
ICC
Voff
∆Voff
VO
VO
Vomax
Vomax
fC
fC
Conditions
In the dark
In the dark
(A+B) – (C+D) In the dark
(A+D) – (B+C) In the dark
(A+C) – (B+D) In the dark
E–F In the dark
PO=10 µW, λ=780 nm
PO=10 µW, λ=780 nm
PO=100 µW, λ=780 nm
PO=100 µW, λ=780 nm
100 kHz reference, –3 dB
10 kHz reference, –3 dB
Min. Typ. Max. Unit
— 3.5 4.5 mA
–15 0 15 mV
–15 0 15 mV
–15 0 15 mV
–15 0 15 mV
–10 0 10 mV
290 370 450 mV
610 770 930 mV
4.0 4.2 — V
4.5 4.9 — V
2.0 2.5 — MHz
100 400 — kHz
Note 1 : VC is reference for output voltage and output offset voltage.
Note 2 : GND is reference for maximum output voltage.
Note 3 : Output voltage and frequency response are subject to confirmation of design.
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CXA1753M
Measurement Circuit
3
D
O
AO
NC
B
O
CO
FO
VCC
VC
GND
E
O
10kΩ 10kΩ
10kΩ
10kΩ
10kΩ
1
2
4
5
VCC
VC
10kΩ
10
9
8
7
6
Photodetector position
(Unit : mm)
DC
F
AB
E
0.6
45°
0.52
1
Reference side Photodetector plane
Tolerance in position of photodetector center
X, Y
Z
θ
: ±0.2
: ±0.2
: ±2°
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