SONY BX 1 Service Manual

BUB323Z

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NPN Silicon Power
Darlington

High Voltage Autoprotected
D2PAK for Surface Mount

The BUB323Z is a planar, monolithic, high−voltage power
Darlington with a built−in active zener clamping circuit. This device is
specifically designed for unclamped, inductive applications such as
Electronic Ignition, Switching Regulators and Motor Control.

Features

• Integrated High−Voltage Active Clamp

• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed

Over the −40°C to +125°C Temperature Range

• Clamping Energy Capability 100% Tested in a Live

Ignition Circuit

• High DC Current Gain/Low Saturation Voltages

Specified Over Full Temperature Range

• Design Guarantees Operation in SOA at All Times

• Pb−Free Packages are Available

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AUTOPROTECTED

DARLINGTON

10 AMPERES

360−450 VOLTS CLAMP

150 WATTS

360 V

CLAMP

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Sustaining Voltage
Collector−Emitter Voltage
Collector Current − Continuous

− Peak

Base Current − Continuous

ОООООООООО

− Peak

Total Power Dissipation

@ TC = 25_C

ОООООООООО

Derate above 25_C

ОООООООООО

Operating and Storage Junction

Temperature Range

V

CEO

V

EBO

I

C

I

CM

I

B

ÎÎ

I

BM

P

D

ÎÎ

ÎÎ

TJ, T

stg

350

6.0
10

20

3.0

Î

6.0

150

Î

1.0

Î

− 65 to
+175

Vdc
Vdc
Adc

Adc

Î

Î

W/_C

Î

_C

W

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature

ОООООООООО

for Soldering Purposes,
1/8 in from Case for 5 Seconds

ОООООООООО

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

Symbol

R

q

JC

R

q

JA

T

L

ÎÎ

ÎÎ

Max

1.0

62.5
260

Î

Î

Unit

_C/W
_C/W

_C

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MARKING
DIAGRAM

BUB323ZG
AYWW

D2PAK

CASE 418B

STYLE 1

BUB323Z = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

© Semiconductor Components Industries, LLC, 2005

August, 2005 − Rev. 1

1 Publication Order Number:

BUB323Z/D

BUB323Z

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ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS (Note 1)

Collector−Emitter Clamping Voltage (IC = 7.0 A)

= −40°C to +125°C)

(T

C

ООООООООООООООООО

Collector−Emitter Cutoff Current

(VCE = 200 V, IB = 0)

Emitter−Base Leakage Current

ООООООООООООООООО

(VEB = 6.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

Base−Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 100 mAdc)

ООООООООООООООООО

(IC = 10 Adc, IB = 0.25 Adc)

Collector−Emitter Saturation Voltage

ООООООООООООООООО

(IC = 7.0 Adc, IB = 70 mAdc)

ООООООООООООООООО

(IC = 8.0 Adc, IB = 0.1 Adc)

ООООООООООООООООО

(IC = 10 Adc, IB = 0.25 Adc)

ООООООООООООООООО

(TC = 125°C)

(TC = 125°C)

Base−Emitter On Voltage

(IC = 5.0 Adc, VCE = 2.0 Vdc) (TC = −40°C to +125°C)
(IC = 8.0 Adc, VCE = 2.0 Vdc)

ООООООООООООООООО

Diode Forward Voltage Drop

(IF = 10 Adc)

ООООООООООООООООО

DC Current Gain

(IC = 6.5 Adc, VCE = 1.5 Vdc) (TC = −40°C to +125°C)
(IC = 5.0 Adc, VCE = 4.6 Vdc)

ООООООООООООООООО

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Output Capacitance

ООООООООООООООООО

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 6.0 V)

ООООООООООООООООО

CLAMPING ENERGY (See Notes)

Repetitive Non−Destructive Energy Dissipated at turn−off:

(IC = 7.0 A, L = 8.0 mH, RBE = 100 W) (see Figures 2 and 4)

SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)

Fall Time
Storage Time
Cross−over Time

ООООООООООО

ООООООООООО

(IC = 6.5 A, IB1 = 45 mA,

V

BE(off)

= 0, R

BE(off)

= 0,

VCC = 14 V, VZ = 300 V)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.

Symbol

V

CLAMP

ÎÎÎ

I

CEO

I

EBO

ÎÎÎ

V

BE(sat)

ÎÎÎ

V

CE(sat)

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

V

BE(on)

ÎÎÎ

V

F

ÎÎÎ

h

FE

ÎÎÎ

f

T

C

ob

ÎÎÎ

C

ib

ÎÎÎ

W

CLAMP

t

fi

t

si

t

c

Min

350

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−

−

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−

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−

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−

−

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−

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−

−

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1.1

1.3

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−

Î

150
500

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−

−

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−

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200

−

−

−

Typ

−

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−

−

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−

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−

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−

−

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−

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−

−

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−

−

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−

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−

−

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−

−

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−

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−

625

10

1.7

Max

450

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100

50

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2.2

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2.5

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1.6

1.8

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1.8

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2.1

1.7

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2.1

2.3

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2.5

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−

3400

ÎÎ

2.0

200

ÎÎ

550

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−

−

30

−

Unit

Vdc

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mAdc

mAdc

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Vdc

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Vdc

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Vdc

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Vdc

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−

Î

MHz

pF

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pF

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mJ

ns

ms
ms

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2

I

C

I

= 6.5 A

NOM

Icer Leakage Current

Output transistor turns on: I

High Voltage Circuit turns on: IC = 20 mA

Avalanche diode turns on: IC = 100 mA

250 V 300 V 340 V

= 40 mA

C

V

CLAMP

V

CE

NOMINAL

= 400 V

BUB323Z

I

CURRENT

B

SOURCE

MERCURY CONTACTS
WETTED RELAY

R

= 100 W

BE

V

BEoff

IB2 SOURCE

L INDUCTANCE

(8 mH)

V

CE

MONITOR

(V

)

GATE

I

C

MONITOR

IC CURRENT
SOURCE

0.1 W
NON
INDUCTIVE

Figure 1. IC = f(VCE) Curve Shape

By design, the BU323Z has a built−in avalanche diode and
a special high voltage driving circuit. During an
auto−protect cycle, the transistor is turned on again as soon
as a voltage, determined by the zener threshold and the
network, is reached. This prevents the transistor from going
into a Reverse Bias Operating limit condition. Therefore, the
device will have an extended safe operating area and will
always appear to be in “FBSOA.” Because of the built−in
zener and associated network, the IC = f(VCE) curve exhibits
an unfamiliar shape compared to standard products as
shown in Figure 1.

10

TC = 25°C

1

Figure 2. Basic Energy Test Circuit

The bias parameters, V

CLAMP

, IB1, V

BE(off)

, IB2, IC, and
the inductance, are applied according to the Device Under
Test (DUT) specifications. VCE and IC are monitored by the
test system while making sure the load line remains within
the limits as described in Figure 4.

Note: All BU323Z ignition devices are 100% energy
tested, per the test circuit and criteria described in Figures 2
and 4, to the minimum guaranteed repetitive energy, as
specified in the device parameter section. The device can
sustain this energy on a repetitive basis without degrading
any of the specified electrical characteristics of the devices.
The units under test are kept functional during the complete
test sequence for the test conditions described:
I

= 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA,

C(peak)

RBE= 100 W, V

1ms

10ms

= 280 V, L = 8.0 mH

gate

300ms

0.1

0.01

, COLLECTOR CURRENT (AMPS)

C

I

0.001

250ms

THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED V

CEO

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 3. Forward Bias Safe Operating Area

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3

1000340V10010