Sony 1T417 Datasheet
—1—
E98905-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage VR 30 V
• Peak reverse voltage VRM 35 V
(RL ≥ 10 kΩ)
• Operating temperature Topr –20 to +75 °C
• Storage temperature Tstg –65 to +150 °C
Description
The 1T417 is a variable capacitance diode
designed for electronic tuning of BS/CS tuners using
a super-small-miniature flat package (SSVC).
Features
• Super-small-miniature flat package
• Low series resistance: 1.5 Ω Max. (f=470 MHz)
• Large capacitance ratio: 15.5 Typ. (C1/C25)
• Small leakage current: 10 nA Max. (VR=25 V)
• Capacitance deviation in a matching group:
within 6 %
Applications
Electronic tuning of BS/CS tuners
Structure
Silicon epitaxial planar type diode
Variable Capacitance Diode
M-290
1T417
Electrical Characteristics (Ta=25 °C)
Item
Reverse current
Reverse voltage
Diode capacitance
Capacitance ratio
Series resistance
Capacitance deviation in a
matching group
Symbol
IR
VR
C1
C25
C1/C25
rs
∆C
Conditions
VR=25 V
IR=1 µA
VR=1 V, f=1 MHz
VR=25 V, f=1 MHz
VR=5 V, f=470 MHz
VR=1 to 25 V, f=1 MHz
Min. Typ. Max. Unit
10 nA
30 V
7.8 8.6 9.4 pF
0.5 0.6 pF
13.0 15.5
1.30 1.50 Ω
6.0 %
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1T417
Example of Representative Characteristics
10
5
2
1
0.2
0.5
0.1
C-Diode capacitance (pF)
VR-Reverse voltage (V)
1 2 5 10 20 50
Forward voltage vs. Ambient temperature
0.80
0.90
0.70
0.60
–20
VF-Forward voltage (V)
Ta-Ambient temperature (°C)
I
F=1mA
0 20 40 60 80
Reverse current vs. Ambient temperature Diode capacitance vs. Reverse voltage
1000
100
10
IR-Reverse current (pA)
Ta-Ambient temperature (°C)
–20 0 20 40 60 80
Reverse voltage vs. Ambient temperature
40
45
35
30
–20
VR-Reverse voltage (V)
Ta-Ambient temperature (°C)
I
R=10µA
VR=25VTa=25°C
0 20 40 60 80
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