Integrated VCOs, Loop Filters,
Varactors, and Resonators
!
Minimal External Components
Required
!
Low Phase Noise
!
5 µA Standby Current
!
25.7 mA Typical Supply Current
!
3.0 V to 3.6 V Operation
!
Package: 24-pin TSSOP
Applications
!
ISM Band Communications
!
Wireless LAN and WAN
!
Dual-Band Communications
Description
The Si4136 is a monolithic integrated circuit that performs both IF and RF
synthesis for wireless communications applications. The Si4136 includes
three VCOs, loo p filters, r eference a nd VCO divide rs, and pha se detector s.
Divider and power down settings are programmable through a three-wire
serial interface.
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25°C unless otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
DD
A
(V
– V
(V
DDR
DDI
– V
∆
DDD
DDD
),
)
–402585°C
3.03.33.6V
–0.3—0.3V
ParameterSymbolValueUnit
DC Supply VoltageV
Input Current
Input Voltage
3
3
Storage Temperature RangeT
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performan ce RF integrated circ uit with an ESD rating of < 2 kV. Handling and assembly of
this device should only be done at ESD-protected workstations.
3. For signals SCLK, SDATA, SENB, PWDNB and XIN.
V
DD
I
IN
STG
IN
–0.5 to 4.0V
±10mA
–0.3 to VDD+0.3V
–55 to 150
o
C
4Rev. 1.0
Si4136
Table 3. DC Characteristics
(VDD = 3.0 to 3.6 V, TA = –40 to 85°C)
ParameterSymbolTest ConditionMinTypMaxUnit
Total Supply Current
RF1 Mode Supply Current
RF2 Mode Supply Current
IF Mode Supply Current
1
1
1
1
Standby CurrentPWDNB = 0—1—µA
High Level Input Voltage
Low Level Input Voltage
High Level Input Current
Low Level Input Current
High Level Output Voltage
Low Level Output Voltage
SCLK Cycle Timet
SCLK Rise Timet
SCLK Fall Timet
SCLK High Timet
SCLK Low Timet
SDATA Setup Time to SCLK↑
SDATA Hold Time from SCLK↑
SENB↓ to SCLK↑ Delay Time
SCLK↑ to SENB↑ Delay Time
SENB↑ to SCLK↑ Delay Time
2. RF VCO tuning range limits are fixed by inductance of internally bonded wires.
3. From power up request (PWDNB↑ or SENB↑ during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF
synthesizers ready (settled to within 0.1 ppm frequency error).
4. From power down request (PWDNB↓, or SENB↑ during a write of 0 to bits PDIB and PDRB in Register 2) to supply
current equal to I
PWDN
.
8Rev. 1.0
Table 5. RF and IF Synthesizer Characteristics (Continued)
(VDD = 3.0 to 3.6 V, TA = –40 to 85°C)
Si4136
Parameter
1
SymbolTest ConditionMinTypMaxUnit
RF1 Harmonic SuppressionSecond Harmonic—–28–20dBc
RF2 Harmonic Suppression—–23–20dBc
IF Harmonic Suppression—–26–20dBc
RFOUT Power LevelZ
RFOUT Power LevelZ
IFOUT Power LevelZ
2. RF VCO tuning range limits are fixed by inductance of internally bonded wires.
3. From power up request (PWDNB↑ or SENB↑ during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF
synthesizers ready (settled to within 0.1 ppm frequency error).
4. From power down request (PWDNB↓, or SENB↑ during a write of 0 to bits PDIB and PDRB in Register 2) to supply
current equal to I
PWDN
.
t
t
t
pup
pup
pdn
Figures 4, 5
f
> 500 kHz
φ
Figures 4, 5
≤ 500 kHz
f
φ
—80100µs
—40/f
50/f
φ
φ
Figures 4, 5——100ns
Rev. 1.09
Si4136
Figure 4. Software Power Management
Timing Diagram
Figure 5. Hardware Power Management
Timing Diagram
10Rev. 1.0
Si4136
Figure 6. Typical Transient Response RF1 at 2.4 GHz
with 1 MHz Phase Detector Update Frequency
Rev. 1.011
Si4136
-60
-70
-80
-90
-100
-110
Phase Noise (dBc/Hz)
-120
-130
-140
1.E+021.E+031.E +041.E+051.E+06
Offset Frequency (Hz)
Typical RF1 Phase Noise at 2.4 GHz
Figure 7. Typical RF1 Phase Noise at 2.4 GHz
with 1 MHz Phase Detector Update Frequency
Figure 8. Typical RF1 Spurious Response at 2.4 GHz
with 1 MHz Phase Detector Update Frequency
12Rev. 1.0
Si4136
s
-60
-70
-80
-90
-10 0
-11 0
Phase Noise (dBc/Hz)
-12 0
-13 0
-14 0
1.E+021.E+031.E+041.E+051.E+06
Offset Frequency (Hz)
Typical RF2 Phase Noise at 2.1 GHz
Figure 9. Typical RF2 Phase Noise at 2.1 GHz
with 1 MHz Phase Detector Update Frequency
Figure 10. Typical RF2 Spurious Response at 2.1 GHz
with 1 MHz Phase Detector Update Frequency
Rev. 1.013
Si4136
-60
-70
-80
-90
-100
-110
Phase Noise (dBc/Hz)
-120
-130
-140
1.E+021.E+031.E+041.E+051.E+06
Offset Frequency (Hz)
Typical IF Phase Noise at 800 MHz
Figure 11. Typical IF Phase Noise at 800 MHz
with 1 MHz Phase Detector Update Frequency
Figure 12. IF Spurious Response at 800 MHz
with 1 MHz Phase Detector Update Frequency
14Rev. 1.0
System
Controller
RFOUT
From
560 pF
0.022µF
Si4136
V
V
DD
DD
Ω ∗
Ω ∗
30
Ω ∗Ω ∗
0.022µF
0.022µF
L
MATCH
Printed Trace
Inductor or
Ch ip In d u c t o r
560 pF
IFO UT
560 pF
External Clock
PDWNB
AUXOUT
Si4136
1
SCLK
2
SDATA
3
GNDR
4
GNDR
5
NC
6
GNDR
7
NC
8
GNDR
9
GNDR
10
GNDR
11
12
RFOUT
VDDR
V
DD
PWDNB
AUXOUT
SENB
VDDI
IFO UT
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
24
23
22
21
20
19
18
17
16
15
14
13
*Add 30 Ω
Ω se ries resistor if using IF output divide values 2, 4, or 8 and f
ΩΩ
Figure 13. Typical Application Circuit: Si4136-BT
< 600 MHz.
CEN
Rev. 1.015
Si4136
Functional Description
The Si4136 is a monolithic integrated circuit that
performs IF and dual-band RF synthesis for many
wireless communications applications. This integrated
circuit (IC), along with a minimum number of external
components, is a ll that is necessary to implement the
frequency synthesis func tion in appli cations lik e W-LAN
using the IEEE 802.11 standard.
The Si4136 has three complete phase-locked loops
(PLLs), with integrated voltage-controlled oscillators
(VCOs). The low ph ase noise of the VCOs mak es the
Si4136 suitable for use in demanding wireless
communications applications. Also integrated are phase
detectors, loop filters, and reference and output
frequency dividers. The IC is programmed through a
three-wir e serial interface.
Two PLLs are provided for RF synthesis. These RF
PLLs are multiplexe d s o tha t only one P LL is ac tiv e at a
given time (as de termined by the setting of an internal
register). The active PLL is the last one written. The
center frequency of the VCO in each PLL is set by the
internal bond wire inductance within the package.
Inaccuracies in thes e induct ances are com pensa ted for
by the self-tuning algorithm. The algorithm is run
following power-up or following a change in the
programmed output frequency.
The RF PLLs contain a divide-by-2 circuit before the Ndivider. As a result, the phase detector frequency (fφ) is
equal to half the de si r ed cha nnel spacing. For ex am ple ,
for a 200 kHz channel spacing, fφ would equal 100 kHz.
The IF PLL does not contain the divide-by-2 circuit
before the N-divider. In this case, fφ is equal to the
desired channel spacing. Each RF VCO is optimized for
a particular frequency range. The RF1 VCO is
optimized to operate from 2.3 GHz to 2.5 GHz, while the
RF2 VCO is optimized to operate be tween 2.025 GHz
and 2.3 GHz.
One PLL is provided for IF synthesis. The center
frequency of this circuit’s VCO is set by an external
inductance. The PL L c an adj ust th e IF o utpu t fr eq uen cy
by ±5% of the VCO center frequency. Inaccuracies in
the value of the external induct ance are compensated
for by the Si4136’s proprietary self-tuning algorithm.
This algorithm is initiated each time the PLL is poweredup (by either the PWDNB pin or by software) and/or
each time a new output frequency is programmed. The
IF VCO can have its center frequency set as low as
526 MHz and as high as 952 MHz. An IF output div ider
is provided to divi de down the IF output freq uencies, if
needed. The divider is programmable, capable of
dividing by 1, 2, 4, or 8.
In order to accommodate designs running at XIN
frequencies greater than 25 MHz, the Si4136 includes a
programmable divide-by-2 option (XINDIV2 in
Register 0, D6) on the XIN input. By enabling this
option, the Si4136 can accept a range of TCXO
frequencies from 25 MHz to 50 MHz. This feature
makes the Si4136 ideal for W-LAN radio designs
operating at an XIN of 44 MHz.
The unique PLL architecture used in the Si4136
produces settling (lock) times that are comparable in
speed to fractional- N architec tures with out suffering the
high phase noise or spurious modulation effects often
associated with those designs.
Serial Inte rface
A timing diagram for the serial interface is shown in
Figure 2 on page 7. Figure 3 on page 7 shows the
format of the serial word.
The Si4136 is programmed serially with 22-bit words
comprised of 18-bit da ta fields and 4-bit addr ess fields.
When the serial interface is enabled (i.e., when SENB is
low) data and address bits on the SDATA pin are
clocked into an internal s hift register on the risin g edge
of SCLK. Data in the shift re gis ter i s t hen trans fer red o n
the rising edge of SENB into the internal data register
addressed in the address field. The serial interface is
disabled when SENB is high.
Table 11 on page 21 summarizes the data register
functions and addresses. It is not necessary (although it
is permissible) to clock into the internal shift register any
leading bits that are “don’t cares.”
Setting the IF VCO Center Frequencies
The IF PLL can adjust its output frequency ±5% from
the center frequency as es tablished by the value of an
external inductance connected to the VCO. The RF1
and RF2 PLLs have fixed operating ranges due to the
inductance set by the internal bond wires. Eac h center
frequency is established by the value of the total
inductance (internal and/or external) connected to the
respective VCO. Manufacturing tolerance of ±10% for
the external indu ctor is a cceptable for the IF V CO. The
Si4136 will compens ate for i naccu racies by exec uting a
self-tuning algorithm following PLL power-up or
following a change in the programmed output
frequency.
Because the total tank inductance is in the low nH
range, the inductance of the package needs to be
considered in determining the correct external
inductance. The total inductance (L
the IF VCO is the sum of the external indu ctanc e (L
) presented to
TOT
EXT
)
16Rev. 1.0
Si4136
and the package in ductance (L
nominal capacitance (C
NOM
). The IF VCO has a
PKG
) in parallel with the total
inductance, and the center frequency is as follows:
Table 6 summarizes the characteristics of the IF VCO.
Table 6. Si4136-BT VCO Characteristics
VCO Fcen Range
(MHz)
MinMaxMinMax
IF5269526.52.12.212.0
Si4136
Cnom
(pF)
L
PKG
2
L
PKG
2
Lpkg
(nH)
Lext Range
(nH)
IFLA
L
EXT
IFLB
Figure 14. Example of IF External Inductor
As a design example, suppose synthesizing
frequencies in a 30 MHz band between 735 MHz and
765 MHz is desired. The center frequency should be
defined as midway between the two extremes, or
750 MHz. The PLL will be able to adjust the VCO output
frequency ±5% of the center frequency, or ±37.5 MHz of
750 MHz (i.e., from approximately 713 MHz to
788 MHz). The IF VCO has a C
6.9 nH inductance (correc t to two digits) in paralle l with
this capacitance w ill yield the desired c enter frequen cy.
An external inductan ce of 4.8 nH should be connected
between IFLA and IFLB, as shown in Figur e 14. Thi s, in
addition to 2.1 nH of package inductance, will present
the correct total inductance to the VCO. In
manufacturing, the exte rnal inductance can vary ±10 %
of its nominal val ue and the Si4136 will c orrect for the
variation with the self-tuning algorithm.
For more information on designing the external trace
inductor, please refer to Application Note 31.
of 6.5 pF, and a
NOM
Self-Tuning Algorithm
The self-tuning algorithm is initiated immediately
following power-up of a PLL or, if the PLL is already
powered, following a c hange in its programmed o utput
frequency. This algorithm attempts t o tune the VCO so
that its free-running frequency is near the desired output
frequency. In so doing, the algorithm will compensate
for manufacturing tolerance errors in the value of the
external inductance connected to the IF VCO. It will also
reduce the frequency error for which the PLL must
correct to get the prec ise desi red ou tput fr equency. The
self-tuning algorith m will leave the VCO oscillating at a
frequency in error by somewhat less than 1% of the
desired output frequency.
After self-tuning, the PLL controls the VCO oscillation
frequency. The PLL will complete frequency locking,
eliminating any remaining frequency error. Thereafter, it
will maintain frequency-lock, compensating for effects
caused by temperature and supply voltage variations.
The Si4136’s self-tuning algorit hm will compensate for
component value errors at any temperature within the
specified temperature r ange. Howeve r, the ability of the
PLL to compensate for drift in component values that
occur after self-tuning is limited. For external
inductances with tempe rature coefficients around ±150
ppm/°C, the PLL will be able to maintain lock for
changes in temperature of approximately ±30°C.
Applications where the PLL is regularly powered-down
or the frequency is perio dical ly repr ogrammed minimi ze
or eliminate the potential effects of temperature drift
because the VCO is re-tuned in either case. In
applications where the ambient temperature can drift
substantially after self-tuning, it may be necessary to
monitor the lock-detect bar (LDETB) signal on the
AUXOUT pin to determine whether a PLL is about to
run out of locking capability. (See “Auxiliary Output
(AUXOUT)” for how to select LDETB.) The LDETB
signal will be low after self-tuning has completed but will
rise when either the IF or RF PLL nears the limit of its
compensation range. (LDETB will also be high when
either PLL is executing the self-tuning algorithm.) The
output frequency wi ll still be locked when LDETB goes
high, but the PLL will eventually lose lock if the
temperature continues to drift in the same direction.
Therefore, if LDETB goes high both the IF and RF PLLs
should promptly be re-tu ned by initiating the se lf-tuning
algorithm.
Output Frequencies
The IF and RF output frequencies are set by
programming the R- and N-Di vider registers. Eac h PLL
has its own R and N registers so that each can be
Rev. 1.017
Si4136
programmed independ ently. Programming either the Ror N-Divider register for RF1 or RF2 automatically
selects the associated output.
When XINDIV2 = 0, the referenc e fr eq uen cy on the XIN
pin is divided by R and this signal is the input to the
PLL’s phase detector. The other input to the phase
detector is the PLL’s VCO output frequency d ivided by
2N for the RF PLLs or N for the IF PLL. After an initial
transient
f
= (2N/R) " f
OUT
= (N/R) " f
f
OUT
(for the RF PLLs)
REF
(for the IF PLL).
REF
The integers R are set by programming the RF1 RDivider register (Re gister 6), the RF2 R-Divider register
(Register 7) and the IF R-Divider register (Register 8).
The integers N are set by programming the RF1 NDivider register (re gister 3), the RF2 N-Divider reg ister
(Register 4), and the IF N-Divider register (Register 5).
If the optional divide-by-2 circuit on the XIN pin is
enabled (XINDIV2 = 1) then after an initial transient
f
= (N/R) " f
OUT
f
/N = (N/2R) " f
OUT
(for the RF PLLs)
REF
(for the IF PLL).
REF
Each N-Divider is impl emented as a conventional high
speed divider. That is, it consists of a dual-modulus
prescaler, a swallow counter, and a lower speed
synchronous counter. However, the control of these
sub-circuits is handled automatically. Only the
appropriate N value should be programmed.
PLL Loop Dynamics
The transient respo nse for each PLL is deter mined by
its phase detector up date rate f
the phase detector gain programmed for each RF1,
RF2, or IF synthesizer. (See Register 1.) Four different
settings for the phase detector gain are available for
each PLL. The highest gain is pro grammed by setting
the two phase detector gain bits to 00, and the lowest by
setting the bits to 11. The values of the ava ilable gai ns,
relative to the highest gain, are listed in Table 7.
Table 7. Gain Values (Register 1)
KP Bits
001
011/2
101/4
111/8
In general, a higher pha se detector gain will decrease
in-band phase noi se a nd in cr ea se th e sp eed of the PLL
(equal to f
φ
Relative P.D.
Gain
REF
/R) and
transient until the point at which stability begins to be
compromised. The optimal gain depends on N. Table 8
lists recommended settings for different values of N.
Table 8. Optimal KP Settings
RF2
KP2<1:0>IFKPI<1:0>
(Tφ equals 1/fφ).
φ
500 kHz
. For
N
K
RF1
P1
<1:0>
≤2047000000
2048 to 4095000101
4096 to 8191011010
8192 to 16383101111
≥16384111111
The VCO gain and loop filter characteristics are not
programmable.
The settling time for each PL L is direc tly proportio nal to
its phase detector update period T
During the first 13 update per iods the Si4136 executes
the self-tuning algorithm. Thereafter the PLL controls
the output frequency. Because of the unique
architecture of the Si4136 PLLs, the time required to
settle the output frequency to 0.1 ppm error is only
about 25 update periods. Thus, the total time after
power-up or a change in programmed frequency until
the synthesized frequency is well settled—including
time for self-tuning—is around 40 update periods.
Note: This settling time analysis holds for fφ≤
fφ >
500 kHz
100 µs as specified in Table 5.
, the settling time can be a maximum of
RF and IF Outputs (RFOUT and IFOUT)
The RFOUT and IFOUT pins are driven by amplifiers
that buffer the RF V COs and I F VCO, respe ctively. The
RF output amplifier receives its input from either the
RF1 or RF2 VCO, depending upon which R- or NDivider register was last written. For example,
programming the N-Divider register for RF1
automatically selects the RF1 VCO output.
Figure 13 on page 15 show s an appli cation di agram for
the Si4136. The R F output signal must b e AC coupled
to its load through a capacitor.
The IFOUT pin must also be AC coupled to its load
through a capacitor. The IF output level is dependent
upon the load. Figure 17 displays the output level
versus load resistance. For resistive loads greater than
500 Ω the output level saturates and the bias currents in
the IF output amplifier ar e higher than they need to be .
The LPWR bit in the Main Configuration register
18Rev. 1.0
Si4136
)
(Register 0) can be set to 1 to redu ce the bias currents
and therefore reduce the power dissipated by the IF
amplifier. For loads less than 500 Ω, LPWR should b e
set to 0 to maximize the output level.
For IF frequencies greater than 500 MHz, a matching
network is required in order to dr ive a 50 Ω l oad. See
Figure 15 below. The value of L
MATCH
can be
determined by Table 9.
Typical values range between 8 nH and 40 nH.
>500 pF
IFO UT
L
MATCH
Ω
50
Figure 15. IF Frequencies > 500 MHz
Table 9. L
MATCH
FrequencyL
500–600 MHz40 nH
600–800 MHz27 nH
800–1 GHz18 nH
For frequencies les s than 500 MHz , the IF output b uffer
can directly drive a 200 Ω resist ive load or higher. For
resistive loads greater than 500 Ω (f < 500 MHz) the
LPWR bit can be set to reduc e the po wer cons umed by
the IF output buffer. See Figure 16 below.
>500 pF
IFO UT
Values
MATCH
>200
Ω
Figure 16. IF Frequencies < 500 MHz
450
400
350
LPWR=0
300
250
200
Output Voltage (mVrms
150
100
50
0
020040060080010001200
LPWR=1
Load Resistance (
ΩΩΩΩ
)
Figure 17. Typical IF Output Voltage vs.
Load Resistance at 550 MHz
Reference Frequency Amplifier
The Si4136 provides a refer ence frequency amp lifier. If
the driving si gn a l ha s CMO S le ve ls, it ca n be con n ec ted
directly to the XIN pin. Otherwise, the reference
frequency signal should be AC coupl ed to the XIN pin
through a 560 pF capacitor.
Power Down Modes
Tabl e 10 summa rizes t he po wer down fun ctiona lity. The
Si4136 can be powered down by taking the PWDNB pin
low or by setting bits in the Power Down register
(Register 2). When the PWD NB pin is low, the Si4136
will be powered down regardless of the Power Down
register settings. When the PWDNB pin is high, power
management is under control of the Power Down
register bits.
The IF and RF sections of the Si4136 ci rcuitry can be
individually power ed down by setting the Power Down
register bits PDIB and PDRB low. The reference
frequency amplifie r will also b e powered up if eit her the
PDRB and PDIB bits are high. Also, setting the
AUTOPDB bit to 1 in the Main Configuration register
(Register 0) is equivalent to setting both bits in the
Power Down register to 1.
The serial interface remains available and can be
written in all power-down modes.
Auxiliary Output (AUXOUT)
The signal appearing on AUXOUT is selected by setting
the AUXSEL bits in the Main Configuration register
(Register 0).
The LDETB signal can be selected by setting the
AUXSEL bits to 011. This signal can be used to indicate
that the IF or RF PLL is about to lose lock due to
excessive ambie nt temperature drift and sho uld be retuned.
Register 3. RF1 N Divider Address Field (A[3:0]) = 0011
BitD17D16D15D14D13D12D11D10D9D8D7D6D5D4D3D2D1D0
NameN
RF1
BitNameFunction
17:0N
RF1
N Divider for RF1 Synthesizer.
≥ 992.
N
RF1
Register 4. RF2 N Divider Address Field = A[3:0] = 0100
BitD17D16D15D14D13D12D11D10D9D8D7D6D5D4D3D2D1D0
Name0N
RF2
BitNameFunction
17ReservedProgram to zero.
16:0N
24Rev. 1.0
RF2
N Divider for RF2 Synthesizer.
≥ 240.
N
RF2
Si4136
Register 5. IF N Divider Address Field (A[3:0]) = 0101
Bit D17D16D15D14D13D12D11D10D9D8D7D6D5D4D3D2D1D0
Name00N
IF
BitNameFunction
17:16ReservedProgram to zero.
15:0N
IF
N Divider for IF Synthesizer.
≥ 56.
N
IF
Register 6. RF1 R Divider Address Field (A[3:0]) = 0110
BitD17D16D15D14D13D12D11D10D9D8D7D6D5D4D3D2D1D0
Name00000R
RF1
NameFunction
17:13ReservedProgram to zero.
12:0R
RF1
R Divider for RF1 Synthesizer.
can be any value from 7 to 8189 if KP1 = 00
R
RF1
8 to 8189 if K
10 to 8189 if K
14 to 8189 if K
P1
= 01
= 10
P1
= 11
P1
Register 7. RF2 R Divider Address Field (A[3:0]) = 0111
BitD17D16D15D14D13D12D11D10D9D8D7D6D5D4D3D2D1D0
Name00000R
RF2
BitNameFunction
17:13ReservedProgram to zero.
12:0R
RF2
R Divider for RF2 Synthesizer.
R
can be any value from 7 to 8189 if KP2 = 00
RF2
8 to 8189 if K
10 to 8189 if K
14 to 8189 if K
Rev. 1.025
P2
= 01
= 10
P2
= 11
P2
Si4136
Register 8. IF R Divider Address Field (A[3:0]) = 1000
BitD17D16D15D14D13D12D11D10D9D8D7D6D5D4D3D2D1D0
Name00000R
IF
BitNameFunction
17:13ReservedProgram to zero.
12:0R
IF
R Divider for IF Synthesizer.
can be any value from 7 to 8189 if KP1 = 00
R
IF
8 to 8189 if K
10 to 8189 if K
14 to 8189 if K
P1
= 01
= 10
P1
= 11
P1
26Rev. 1.0
Pin Descriptions: Si4136
Si4136
SCLK
SDATA
GNDR
GNDR
NC
GNDR
NC
GNDR
GNDR
GNDR
RFOUT
VDDR
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
SENB
VDDI
IFOUT
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
PWDNB
AUXOUT
Pin Number(s) NameDescription
1SCLKSerial cl ock input
2SDATASerial data input
3, 4, 6, 8–10GNDRCommon ground for RF analog circuitry
5, 7NCNo connect
11RFOUTRadio frequency (RF) output of the selected RF VCO
12VDDRSupply voltage for the RF analog circuitry
13AUXOUTAuxiliary output
14PWDNBPower down input pin
15XINReference frequency amplifier input
16, 18GNDDCommon ground for digital circuitry
17VDDDSupply voltage for digital circuitry
19, 20IFLA, IFLBPins for inductor connection to IF VCO
21GNDICommon ground for IF analog circuitry
22IFOUTIntermediate frequency (IF) output of the IF VCO
23VDDISupply voltage for IF analog circuitry
24SENBEnable serial port input
Rev. 1.027
Si4136
Ordering Guide
Ordering Part
Number
Si4136-BT2.5 GHz/2.3 GHz/IF OUT–40 to 85
DescriptionTemperature
o
C
28Rev. 1.0
Si4136
Package Outline
Figure 18 illustrates t he package de tails for the Si 4136. Table 12 lists the value s for the dimens ions shown i n the
illustration.
E1 E
R1
R
θ1
e
D
A2
A
b
A1
θ2
S
L
L1
θ
3
Figure 18. 24-pin Thin Small Shrink Outline Package (TSSOP)
Table 12. Package Diagram Dimensions
SymbolMillimeters
MinNomMax
A—1.101.20
A10.05—0.15
A20.801.001.05
b0.19—0.30
c0.09—0.20
D4.855.005.15
e0.65 BSC
E6.40 BSC
E14.304.404.50
L0.450.600.75
L11.00 REF
R0.09 — —
R10.09——
S0.20— —
θ10 —8
θ212 REF
θ312 REF
c
Rev. 1.029
Si4136
Contact Information
Silicon Laboratories Inc.
4635 Boston Lane
Austin, TX 78735
Tel: 1+(512) 416-8500
Fax: 1+(512) 416-9669
Toll Free: 1+(877) 444-3032
The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice.
Silicon Laboratories assumes no responsibility for errors and omissions, and disclaims responsibility for any consequences resulting from
the use of information included herein. Additionally, Silicon Laboratories assumes no responsibility for the functioning of undescribed features
or parameters. Silicon Laboratories reserves the right to make changes without further notice. Silicon Laboratories makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Silicon Laboratories assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Silicon Laboratories products are not designed, intended, or authorized for use in applications intended to
support or sustain life, or for any other application in which the failure of the Silicon Laboratories product could create a situation where personal injury or death may occur. Should Buyer purchase or use Silicon Laboratories products for any such unintended or unauthorized application, Buyer shall indemnify and hold Silicon Laboratories harmless against all claims and damages.
Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc.
Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders.
30Rev. 1.0
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