Silicon Laboratories Si4136-BT Datasheet

Si4136
ISM RF S F
OR
IRELESS COMMUNICATIONS
W
YNTHESIZER
ITH INTEGRATED
W
Features
!
Dual-Band RF Synthesizers
RF1: 2300 MHz to 2500 MHz
"
RF2: 2025 MHz to 2300 MHz
"
!
IF Synthesizer
62.5 MHz to 1000 MHz
"
!
Integrated VCOs, Loop Filters, Varactors, and Resonators
!
Minimal External Components Required
!
Low Phase Noise
!
5 µA Standby Current
!
25.7 mA Typical Supply Current
!
3.0 V to 3.6 V Operation
!
Package: 24-pin TSSOP
Applications
!
ISM Band Communications
!
Wireless LAN and WAN
!
Dual-Band Communications
Description
The Si4136 is a monolithic integrated circuit that performs both IF and RF synthesis for wireless communications applications. The Si4136 includes three VCOs, loo p filters, r eference a nd VCO divide rs, and pha se detector s. Divider and power down settings are programmable through a three-wire serial interface.
Functional Block Diagram
XIN
PWDNB
SDATA
SCLK
SENB
Reference
Am plifier
Power
Down
Control
Serial
Inte r f ace
22-bit
Data
Register
÷1/÷2
÷
R
Phase
RF1
Detect
÷
R
÷
RF2
Phase Detect
÷
RF1
N
N
2
÷
RF1
RF2
2
÷
RF2
RFOUT
VCOS
Ordering Information:
Pin Assignments
SCLK
SDATA
GNDR
GNDR
GNDR
GNDR
GNDR
GNDR
RFOUT
VDDR
Patents pending
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
See page 28.
Si4136
24
23
22
21
20
19
18
17
16
15
14
13
SENB
VDDI
IFOUT
GNDI
IFLB
IFLA
GNDD
VDDD
GNDD
XIN
PWDNB
AUXOUT
R
÷
IF
AUXOUT
Test Mux
Phase Detect
IFD IV
IF
÷
N
IF
IFO UT
IFL A IFL B
Rev. 1.0 12/00 Copyright © 2000 by Silicon Laboratories Si4136-DS10
Si4136
2 Rev. 1.0
Si4136
T
ABLE OF
C
ONTENTS

Section Page

Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Serial Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Setting the VCO Center Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Self-Tuning Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Output Frequencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PLL Loop Dynamics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
RF and IF Outputs (RFOUT and IFOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Reference Frequency Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Power Down Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Auxiliary Output (AUXOUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Pin Descriptions: Si4136 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Rev. 1.0 3
Si4136

Electrical Specifications

Table 1. Recommended Operating Conditions
Parameter Symbol Test Condition Min Typ Max Unit
Ambient Temperature T Supply Voltage V Supply Voltages Difference V
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25°C unless otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
DD
A
(V
– V
(V
DDR
DDI
– V
DDD DDD
), )
–40 25 85 °C
3.0 3.3 3.6 V
–0.3 0.3 V
Parameter Symbol Value Unit
DC Supply Voltage V Input Current
Input Voltage
3
3
Storage Temperature Range T
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2. This device is a high performan ce RF integrated circ uit with an ESD rating of < 2 kV. Handling and assembly of this device should only be done at ESD-protected workstations.
3. For signals SCLK, SDATA, SENB, PWDNB and XIN.
V
DD
I
IN
STG
IN
–0.5 to 4.0 V
±10 mA
–0.3 to VDD+0.3 V
–55 to 150
o
C
4 Rev. 1.0
Si4136
Table 3. DC Characteristics
(VDD = 3.0 to 3.6 V, TA = –40 to 85°C)
Parameter Symbol Test Condition Min Typ Max Unit
Total Supply Current RF1 Mode Supply Current RF2 Mode Supply Current IF Mode Supply Current
1
1 1
1
Standby Current PWDNB = 0 1 µA High Level Input Voltage Low Level Input Voltage High Level Input Current
Low Level Input Current
High Level Output Voltage Low Level Output Voltage
Notes:
1. RF1 = 2.4 GHz, RF2 = 2.1 GHz, IFOUT = 800 MHz, LPWR = 0.
2. For signals SCLK, SDATA, SENB, and PWDNB.
3. For signal AUXOUT.
2
2
2
2
3
3
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
RF1 and IF operating 25.7 35 mA
—15.720mA —15.420mA —1015mA
V
V
V
=
IH
= 3.6 V
DD
V
IL
=
DD
3.6 V,
=
0 V,
3.6 V
0.7 V
DD
0.3 V
–10 10 µA
–10 10 µA
——V
DD
IOH = –500 µA VDD–0.4 V
IOH = 500 µA 0.4 V
V
Rev. 1.0 5
Si4136
t
t
Table 4. Serial Interface Timing
(VDD = 3.0 to 3.6 V, TA = –40 to 85°C)
Parameter
1
SCLK Cycle Time t SCLK Rise Time t SCLK Fall Time t SCLK High Time t SCLK Low Time t SDATA Setup Time to SCLK SDATA Hold Time from SCLK SENB to SCLKDelay Time SCLK to SENBDelay Time SENB to SCLKDelay Time
2
2 2 2 2
SENB Pulse Width t
Symbol Test Condition Min Typ Max Unit
Figure 1 40 ns Figure 1 50 ns Figure 1 50 ns Figure 1 10 ns Figure 1 10 ns Figure 2 5 ns Figure 2 0 ns Figure 2 10 ns Figure 2 12 ns Figure 2 12 ns Figure 2 10 ns
t
t t t
clk
t
su
hold
en1
en2
en3
w
r
f
h
l
Notes:
1. All timing is referenced to the 50% level of the waveform, unless otherwise noted.
2. Timing is not referenced to 50% level of the waveform. See Figure 2.
SCLK
r
80% 50% 20%
f
t
h
t
t
l
clk
Figure 1. SCLK Timing Diagram
6 Rev. 1.0
Si4136
A
Figure 2. Serial Interface Timing Diagram
First bit
clocked in
D17D16D15D14D13D12D11D10D9D8D7D6D5D4D3D2D1D0A3A2A
data field
Figure 3. Serial Word Format
A
Last bit
clocked in
1
address
field
A 0
Rev. 1.0 7
Si4136
Table 5. RF and IF Synthesizer Characteristics
(VDD = 3.0 to 3.6 V, TA = –40 to 85°C)
Parameter
1
XIN Input Frequency f XIN Input Frequency f Reference Amplifier Sensitivity V
Symbol Test Condition Min Typ Max Unit
REF
REF
REF
XINDIV2 = 0 2 25 MHz XINDIV2 = 1 25 50 MHz
0.5 VDD
V
PP
+0.3 V
Phase Detector Update Frequency f
φ
fφ = f
REF
/R for
0.010 1.0 MHz
XINDIV2 = 0
f
= f
/2R for
REF
φ
XINDIV2 = 1 RF1 VCO Tuning Range RF2 VCO Tuning Range
2 2
IF VCO Center Frequency Range f IFOUT Tuning Range from f IFOUT VCO Tuning Range from f
CEN
CEN
CEN
with IFDIV 62.5 1000 MHz
Note: L ±10% –5 5 %
2300 2500 MHz 2025 2300 MHz
526 952 MHz
RF1 VCO Pushing Open loop 0.75 MHz/V RF2 VCO Pushing 0.65 MHz/V IF VCO Pushing 0.10 MHz/V RF1 VCO Pulling VSWR = 2:1, all RF2 VCO Pulling 0.100 MHz p-p
phases, open loop
0.250 MHz p-p
IF VCO Pulling 0.025 MHz p- p RF1 Phase Noise 1 MHz offset –130 dBc/Hz RF1 Integrated Phase Error 100 Hz to 100 kHz 1.2 degrees
rms RF2 Phase Noise 1 MHz offset –131 dBc/Hz RF2 Integrated Phase Error 100 Hz to 100 kHz 1.0 degrees
rms IF Phase Noise at 800 MHz 100 kHz offset –104 dBc/Hz IF Integrated Phase Error 100 Hz to 100 kHz 0.4 degrees
rms
Notes:
1. f
(RF) = 1 MHz, fφ(IF) = 1 MHz, RF1 = 2.4 GHz, RF2 = 2.1 GHz, IFOUT = 800 MHz, LPWR = 0, for all parameters
φ
unless otherwise noted.
2. RF VCO tuning range limits are fixed by inductance of internally bonded wires.
3. From power up request (PWDNB or SENB during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF
synthesizers ready (settled to within 0.1 ppm frequency error).
4. From power down request (PWDNB, or SENB↑ during a write of 0 to bits PDIB and PDRB in Register 2) to supply current equal to I
PWDN
.
8 Rev. 1.0
Table 5. RF and IF Synthesizer Characteristics (Continued)
(VDD = 3.0 to 3.6 V, TA = –40 to 85°C)
Si4136
Parameter
1
Symbol Test Condition Min Typ Max Unit
RF1 Harmonic Suppression Second Harmonic –28 –20 dBc RF2 Harmonic Suppression –23 –20 dBc IF Harmonic Suppression –26 –20 dBc RFOUT Power Level Z RFOUT Power Level Z IFOUT Power Level Z
= 50 Ω, RF1 active –15 –7 0 dBm
L
= 50 Ω, RF2 active –15 –9 0 dBm
L
= 50 –7 –3 1 dBm
L
RF1 Output Reference Spurs Offset = 1 MHz –63 dBc
Offset = 2 MHz –68 dBc Offset = 3 MHz –70 dBc
RF2 Output Reference Spurs Offset = 1 MHz –63 dBc
Offset = 2 MHz –68 dBc Offset = 3 MHz –70 dBc
Power Up Request to Synthesizer
3
Ready Power Up Request to Synthesizer
Ready
Time
3
Time
Power Down Request to Synthesizer
4
Off
Time
Notes:
(RF) = 1 MHz, fφ(IF) = 1 MHz, RF1 = 2.4 GHz, RF2 = 2.1 GHz, IFOUT = 800 MHz, LPWR = 0, for all parameters
1. f
φ
unless otherwise noted.
2. RF VCO tuning range limits are fixed by inductance of internally bonded wires.
3. From power up request (PWDNB or SENB during a write of 1 to bits PDIB and PDRB in Register 2) to RF and IF
synthesizers ready (settled to within 0.1 ppm frequency error).
4. From power down request (PWDNB, or SENB↑ during a write of 0 to bits PDIB and PDRB in Register 2) to supply current equal to I
PWDN
.
t
t
t
pup
pup
pdn
Figures 4, 5
f
> 500 kHz
φ
Figures 4, 5
500 kHz
f
φ
—80100µs
—40/f
50/f
φ
φ
Figures 4, 5 100 ns
Rev. 1.0 9
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