SILAN SC91214-15A, SC91214-15B, SC91214-15C, SC91214-15D Datasheet

Silan Semiconductors
SC91214/15 SERIES
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2001.01.03
1
DESCRIPTION
The SC91214/15 Series is a single-chip, silicon gate, CMOS
integrated circuit with an on-chip oscillator for a 3.58MHZ crystal
or ceramic resonator. It provides a dialing pulse (DP) or dual tone
multi-frequency (DTMF) dialing. A standard 4 X4 matrix keyboard
can be used to support either DP or DTMF modes.
FEATURES
* One touch redial operation * Tone/Pulse switchable
* 32 digit capacity for redialing
* Automatic mixed redialing (last number redial) of pulse to
DTMF with multiple automatic access pauses
* PABX auto-pause is 2.2 seconds
* DTMF Timing:
Manual dialing: minimum duration for bursts and pauses
Redialing: calibrated timing
* Hands-Free control function
* Wide operating voltage range: 2V to 5.5V
* Key-in beep tone output
* Digits dialed manually after redialing are cascadable and
stored as additional digits for the next redialing
* Uses inexpensive ceramic resonator (3.58 MHZ)
* Two versions for different telephone systems
* Built-in power up reset circuit
* Four extra function keys: flash, pause, redial and DP or
DTMF mixed dialing
* 4 X 4 (or 2 X 8) keyboard can be used
* Low standby current
DIP-20
DIP-18
DIP-16
ORDERING INFORMATION
SC91214/15A DIP-16 Package
SC91214/15B DIP-18 Package
SC91214/15C DIP-18 Package
SC91214/15D DIP-20 Package
Silan Semiconductors
SC91214/15 SERIES
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2001.01.03
2
PIN CONFIGURATIONS
1
2
3
4
5
6
7
8 9
16
15
14
13
12
11
10
SC91214/15A
C3
C1
OSCI
OSCO
TONE
V
SS
R3
R2
R1
R4
DP
XMITMUTE
V
DD
MODE IN
C2
HK
a. DIP-16 Package
1
2
3
4
5
6
7
8
9
16
15
14
13
12
11
10
SC91214/15B
C3
C1
OSCI
OSCO
TONE
V
SS
R3
R2
R1
R4
DP
XMITMUT E
V
DD
MODE IN
C2
HK
b. DIP-18Package
(i) Key tone output
18
17
MODE OUT
KT
1
2
3
4
5
6
7
8
9
16
15
14
13
12
11
10
SC91214/15C
C3
C1
OSCI
OSCO
TONE
V
SS
R3
R2
R1
R4
DPXMITMUT E
V
DD
MODE IN
C2
HK
(ii) Hand-free control
18
17
HFO
HFI
1
2
3
4
5
6
7
8
9
16
15
14
13
12
1110
SC91214/15D
C3
C1
OSCI
OSCO
TONE
V
SS
R3
R2
R1
R4
DPXMITMUTE
V
DD
MODE IN
C2
HK
c. DIP-20 Package
20
19
18
17
HFO
MODE OUT
KT
HFI
Silan Semiconductors
SC91214/15 SERIES
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2001.01.03
3
BLOCK DIAGRAM
KEYBOARD
LOGIC
REDIAL MEMO RY
32 DIGITS
OUTPUT
LOGIC
DTMF
GENERATOR
INPUT LOGIC
CONTROL
LOGIC
OSC
R1
R4
C1
C3
MODE IN
HFI
HK
DP
KT
HFO
XMIT MUTE
MODE OUT
V
DD
TONE
OSCI
OSCO
ABSOLUTE MAXIMUM RATINGS
(Tamb=25°C, All voltage referenced to VSS, unless otherwise specified)
Characteristic Symbol Value Unit
Power Supply Voltage VDD 6.0 V
Input Voltage VIN -0.3~VDD+0.3 V
Output Voltage V
OUT
-0.3~VDD+0.3 V
Output Voltage (DP, XMIT MUTE) V
OUT
1.2 V
Tone Output Current I
TONE
50 mA
Power Dissipation PD 500 mW
Operating Temperature Topr -25~+70 °C
Storage Temperature Tstg -55~+150 °C
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to this
device. These are stress ratings only. Functional operation of this device at these or any other conditions
above those indicated in the operational sections of this specification is not implied or intended. Exposure to
the absolute maximum rating conditions for extended periods may affect device reliability.
Silan Semiconductors
SC91214/15 SERIES
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2001.01.03
4
AC ELECTRICAL CHARACTERISTICS
(Top=25°C, VDD=3.5V, VSS=0V, fosc=3.579545MHz, All voltage referenced to V
SS,
unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
Tes t
KT.
Tone mode 2.0 -- 5.5
Operating Voltage VDD
Pulse mode 2.0 -- 5.5
V A
Memory Retention Voltage VMR 1 V --
Memory Retention Current IMR
V
DD
=1.0V, HK=VDD
All outputs unloaded
0.05 0.4 µA --
I
DDP
Pulse mode 0.32 1.0
Operating Current
I
DDT
Tone mode
All outputs unloaded
0.6 2.0
mA A
HK
=VDD=1.5V
0.03 0.05
Standby Current ISO
HK
=VSS
All outputs unloaded,
no key selected
0.5 10
µA A
VIH 0.8 1
Input Voltage
V
IL
0 0.2
V
DD
R1-R4
Input Current
I
R
115 µA C
VOC Column 584 730 876
Tone out Voltage
V
OR
Row
V
DD
=3.5V, RL=5K
456 570 684
mVp-p D
HFI
Pull Low Current
| I
HFI
|
V
DD
=3.5V (Note 1)
HFI
pin connected to 0V
5 µA B
HFO Drive Current | I
OH1
|
V
DD
=3.5V
V
OH=VDD
-0.4V
0.4 2 mA B
HFO, KT, MODEOUT
XMITMUTE
Sink Current
I
OL1
V
DD
=3.5V
V
OL
=0.4V
0.9 5.3 mA B
DP
Sink Current
I
OL2
VDD=3.5V, VOL=0.4V 1.1 5.3 mA B
Distortion DIS% * see note below 1 5 %
* Note:
1/2
22
1/2
222
)
V
IH
V
IL
(
)
V
n
V
2
V
1
( X 100
DIS%
+
+++
=
L
1. V
1
Vn are the intermediation or the harmonic frequencies in the 500Hz to 3400Hz band.
2. V
IL
and VIH are the individual frequency components of the DTMF signal.
Silan Semiconductors
SC91214/15 SERIES
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2001.01.03
5
AC CHARACTERISTICS
(Top=25°C, VDD=3.5V, VSS=0V, fosc=3.579545MHz, All voltage referenced to V
SS,
unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
M/B=1/2 33.3
10pps
M/B=2/3 40.0
M/B=1/2 16.7
Make Time TM
20pps
M/B=2/3 20.0
ms
M/B=1/2 66.6
10pps
M/B=2/3 60.0
M/B=1/2 33.3
Break Time TB
20pps
M/B=2/3
30.0
ms
10pps 824
Inter-digit Pause Time T
IDP
20pps 458
ms
Pause Time T
PAU
2.2 sec
Auto-redial Break Time T
AOBK
2.2 sec
Delay Time Key Valid to Signal Out TD 0 ms
Key-in Debounce TKD 21 ms
Key Release Debounce Time T
KLD
5.2 ms
Key-in Tone Duration T
KTD
23 ms
Key-in Tone Frequency FKT 437 Hz
Minimum Tone Duration Time T
MFD
90 ms
Min. Tone Inter-digit Pause T
TIDP
100 ms
Redial Tone Duration T
MFDR
90 ms
Redial Tone Inter-digit Duration T
TIDPR
100 ms
COMPARISONS OF SPECIFIED VS ACTUAL TONE FREQUENCIES
(Fosc=3.579MHz)
R/C Spec. Actual Error (%) Unit
R1
697 699.1 +0.31 Hz
R2
770 771.5 +0.19 Hz
R3
852 852.3 +0.03 Hz
R4
941 942.0 +0.10 Hz
C1
1,29 1,215.7 +0.57 Hz
C2
1,336 1,331.7 -0.32 Hz
C3
1,477 1,471.9 -0.35 Hz
Silan Semiconductors
SC91214/15 SERIES
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2001.01.03
6
KEYBOARD ASSIGNMENT
1
23F1
4
56F2
7
89P
*/T
0#RD
C1 C2 C3 C4
R1
R2
R3
R4
1) */T: In PULSE mode this key works as Pulse→DTMF key (T key). In DTMF mode the key works as * key.
*/T key will occupy one memory digit in either use.
2) F1: Flash key. The break time is 297 ms or 96 ms (SC91214/15 respectively)
3) F2: Flash key for break time 640 ms
4) P: Pause key (2.2 seconds)
5) RD: One key redial key
6) EMn: One touch memory key
7) #: In PULSE mode this key input is neglected. In DTMF mode this key works as # key.
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