Siemens TBA229-5 Datasheet
TBA 229-5
Dual Sound FM IF Amplifier TBA 229-5
Bipolar IC
Features
High AM suppression over a very wide
input voltage range
High sensitivity
Very high symmetry
P-DIP-16
The component contains two separate limiter amplifiers with FM demodulators and separate
AF outputs.
Type Ordering Code Package
TBA 229-5 Q67000-A5133 P-DIP-16
Circuit Description
The component contains two separate FM sound IF sections for television stereo applications
or for multistandard receivers. Each FM section consists of an eight-stage symmetrical limiter
amplifier followed by a coincidence demodulator and an AF pre-amplifier with a low-ohmic
output. The component features considerably improved AM suppression characteristics with
small input signals, as well as a very low frequency deviation between THD
min and AMmin.
Semiconductor Group 1
01.93
Absolute Maximum Ratings
TBA 229-5
Parameter Symbol
Limit Values
Unit
min. max.
Supply voltage VS 016V
Reference current I
IF input voltage V
DC voltages V
DC currents I
Junction temperature T
Storage temperature range T
Thermal resistance (system-air) R
REF 02mA
I IF rms 0 600 mV
9, 10, 11
V14, 15, 16
1, 2, 4, 5, 7, 8 02mA
j 150
stg – 40 125
th SA 80 K/W
0
0
V REF
VREF
V
V
˚
˚
C
C
Operating Range
Supply voltage VS 10.5 15.75 V
Ambient temperature T
Frequency f
A 070
I 0.1 12 MHz
C
˚
Semiconductor Group 2
TBA 229-5
Characteristics
S = 12 V; TA = 25 ˚C; VI IF 14 rms = 10 mV; fI IF 11, 14 = 5.5 MHz; fmod = 1 kHz; ∆ f = ± 30 kHz
V
(if not stated otherwise)
Parameter Symbol
Unit Test ConditionLimit Values
min. typ. max.
Current consumption IS 25 35 42 mA
Input voltage for
limiter threshold V
I 11 rms
VI 14 rms
Output voltage VQ 4 rms
VQ 5 rms
DC voltage portion V
Total harmonic
Q 4 =
Q 5 =
V
THD 4,THD 5 0.4 0.8 % THD = THD min
510
510
4.8
4.866
5050100
100
600
600
700
700mVmV
6.2
6.2VV ∆ f = 0; THD = THD min
µV
µV VQ 4, 5 = – 3 dB
distortion
AM suppression
i rms =1 mV; m = 30%
V
α
AM 4
αAM 5
555560
60
dB
dB V
Cross-talk rejection
IF 1-2 = VQ 4/
C
Q 5
V
CIF 1-2 = VQ 4/
Q 5
V
60
60
dBdBfI IF 11 = 5.5 MHz; ∆ f11 = 0 kHz;
I rms=1 mV; m = 30%
I 11 rms = 4 mV; VI 14 rms =10 mV
V
I IF 11 = 5.74 MHz; ∆ f14 = 0 kHz
f
I 11 rms = 4 mV; VI 14 rms =10 mV
V
Reference voltage V 13 = 5.4 6 6.6 V
Switching voltage
muting ON (AF off)
OFF
V
V16
16
8
0
V
3
V
S
V
Design-Related Values
Input resistance R
I 1, 2
R I 7, 8
Output resistance R Q 4, 5 100
Input impedance
Z
I11, 14 800
20
20
kΩ
kΩ
Ω
Ω
IF residual voltage VQ 4, 5 (IF) 15 mV
Hum suppression αQ hum 32 dB fS = 100 Hz
∆VS rms = 500 mV; VS/VQ 4; VS/
Q 5
V
Frequency deviation
min – THDmin
AM
∆ fIF ±10 kHz
Semiconductor Group 3
TBA 229-5
Block Diagram
Semiconductor Group 4
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